SST26Z-800CW

SST26Z-800BW SST26Z-800CW Technical Data Data Sheet N2168, Rev.- SST26 Series 25A TRIACs Circuit Diagram TO-3P Insulated Description With high ability to withstand the shock loading of large current, SST26Z provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Maximum Ratings: Characteristics Symbol Condition Max. Storage junction temperature range Operating junction temperature range Repetitive peak off-state voltage Tstg - -40 to +150 C VDRM - 800 V Repetitive peak reverse voltage VRRM - 800 V Non repetitive peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) 25 A 250 A Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Peak gate power ITSM - -40 to +125 Units TJ TO-3P(Ins)(TC=100℃) - C 2 It - 340 A2 s dI/dt - 50 A/μs IGM 4 A PGM - 1 W PG(AV) - 10 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST26Z-800BW SST26Z-800CW Technical Data Data Sheet N2168, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Test Condition VD =12V RL =33Ω VGT VD =VDRM Tj =125℃ RL =3.3KΩ VGD IG =1.2IGT IH IT =100mA VD=2/3VDRM Gate Open Tj =125℃ BW CW MAX Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅱ 50 35 Unit Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅲ IL dV/dt Value Quadrant mA 80 70 100 80 MAX 75 50 mA MIN 1000 500 V/μs MAX mA Static Characteristics Symbol VTM IDRM IRRM Condition IT=35A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ Max. Units 1.5 5 3 V μA mA Value Units 1.0 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC) TO-3P(Ins)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST26Z-800BW SST26Z-800CW Technical Data Data Sheet N2168, Rev.- Ordering Information S ST 26 Z -800 BW SMC Diode Solutions BW:IGT1-3 ≤ 50mA CW:IGT1-3 ≤ 35mA Triacs IT(RMS):25A 800:VDRM/VRRM ≥ 800V Z:TO-3P(Ins) Device SST26 Series Package Shipping TO-3P 30pcs/ Tube Marking Diagram Where XXXXX is YYWWL SST26Z-800BW YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-3P SYMBOL Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J K L P R 5.40 1.10 1.35 2.80 5.65 1.40 1.50 3.00 0.213 0.043 0.053 0.110 0.222 0.055 0.059 0.118 4.35  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  0.171 SST26Z-800BW SST26Z-800CW Technical Data Data Sheet N2168, Rev.- Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 30 P(w) 36 α=180° TO-3P(Ins) 25 27 20 18 15 10 9 5 0 0 IT(RMS) (A) 10 15 5 20 25 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 0 0 25 50 75 100 125 4 5 FIG.4: On-state characteristics (maximum values) ITM (A) 200 ITSM (A) 300 t=20ms One cycle 240 100 Tj=125℃ 180 10 120 Tj=25℃ 60 Number of cycles 10 100 0 1 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp