TOPT16-800C0,127

TOPT16-800C0 TOPTriac Rev.01 - 22 August 2018 Product data sheet 1. General description Planar passivated Temperature and Overload Protected Triac with high commutation performance in a SOT78 (TO-220AB) plastic package. This TOPTriac conveniently self protects by turning off in the event of excessive temperature. It is triggered negatively using continuous DC or current pulses. TOPTriac is ideal for applications where heatsinking is limited. TOPTriac is safe to use in short-term overload under normal duty cycle conditions. TOPTriac gives the additional assurance that it will self-protect, if pushed to thermal overload, under abnormal duty cycle or fault conditions. 2. Features and benefits • • • • • • • • • Over-temperature self-protection function Eliminates risk of overload failure due to limited heatsinking Pin compatible with standard triacs Exclusive negative gate triggering Full cycle AC conduction Hi-Com technology for maximum immunity to false triggering High immunity to false turn-on by dV/dt High minimum IGT for guaranteed immunity to gate noise Planar passivated for voltage ruggedness and reliability 3. Applications • • • • • Any circuit where protection against overload and/or over temperature is required Motor controls and starters – e.g. refrigeration compressors High power density motors – e.g. vacuum cleaners, window blinds, food processors Heating and cooking appliances Water boilers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 800 V VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3 - - 16 A ITSM non-repetitive peak onstate current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - - 140 A Tj junction temperature conducting mode - - 125 °C 150 °C self-protection mode TOPT16-800C0 WeEn Semiconductors TOPTriac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 7 5 - 35 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 7 5 - 35 mA Static characteristics IGT gate trigger current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 35 mA VT on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/μs dIcom/dt rate of change of commutating current VD = 400 V; IT(RMS) = 16 A; dVcom/ dt = 20 V/μs; (snubberless condition); gate open circuit 15 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 CM common 2 LD load 3 mb G LD gate mounting base; load Graphic symbol mb 1 2 3 6. Ordering information Table 3. Ordering information Type number Package TOPT16-800C0 Name Description Version TO-220AB Plastic single-ended package;heatsink mounted;1 mounting hole; 3 leads TO-220AB SOT78 7. Marking Table 4. Marking codes Type number TOPT16-800C0 TOPT16-800C0 Product data sheet Marking Code TOPT16-800C0 All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on-state current Min Max Unit - 800 V full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3 - 16 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig 4; Fig 5 - 140 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 150 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 98 A2s dIT/dt rate of rise of on-state current IG = 70 mA - 100 A/μs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature conducting mode - 125 °C self-protection mode - 150 °C over any 20 ms period Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values f = 50 Hz; Tmb = 101 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values tp ≤ 20 ms (1) dIT/dt limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient free air Conditions Min Typ Max Unit full cycle; Fig. 6 - - 1.2 K/W in free air - 60 - K/W Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 7 5 - 35 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 7 5 - 35 mA VD = 12 V; IG = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 - - 60 mA VD = 12 V; IG = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 - - 50 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 35 mA VT on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V VGT gate trigger voltage VD = 12V; IT = 100 mA;Tj = 25 °C; Fig. 11 - 1.4 2.3 V VD = 400V; IT = 100 mA;Tj = 125 °C; Fig. 11 0.5 - - V VD = 800 V; Tj = 125 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/μs dIcom/dt rate of change of commutating current VD = 400 V; IT(RMS) = 16 A; dVcom/ dt = 20 V/μs; (snubberless condition); gate open circuit; 15 - - A/ms Over-temperature protection characteristics Ttrip trip junction temperature see application information 125 - 150 °C VG(trip) trip gate voltage IG = 2 mA; see application information 0.3 - - V IG = 50 mA; see application information - - 0.9 V Tj = 25 °C; VG = VG(trip); circuit-applied current requirement; see application information section 0.5 - - mA Tj < 150 °C; VG = VGT; circuit-applied current requirement; see application information section - - 2 mA Operating requirement for pulsed gate triggering IG(bl) gate bleed current TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac (1) LD+ G(2) LD- G- (1) LD+ G(2) LD- G- Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of junction temperature junction temperature bidc4-009 3 IH IH(25°C) 2 (1) (2) 1 0 -50 0 50 100 Tj (°C) 150 Vo = 1.024 V; Rs = 0.021 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values (1) LD+ G(2) LD- GFig. 9. Normalized holding current as a function of junction temperature TOPT16-800C0 Product data sheet Fig. 10. On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac (1) LD+ G(2) LD- GFig. 11. Normalized gate trigger voltage as a function of junction temperature TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 11. Application information TOPTriac is a three terminal device that will plug into existing triac circuits. There are some unique features that must be understood to gain its full benefits. 11.1 The Gate terminal is also a Feedback terminal TOPTriac can be triggered like any normal triac. In this conventional mode, the Gate acts as an input. However, the Gate can also be an output, since it provides voltage signatures that indicate the status of TopTriac. The controlling microcontroller can analyse the feedback and act upon it, according to the needs of the application. 11.2 Normal triggering TOPTriac is triggered with negative gate current and may be triggered from 5 V logic or higher voltage supply with suitable series gate resistor. VGT is higher than for standard triacs, so series gate resistors will be a little lower. For 35 mA IGT and 5 V trigger voltage, the current-limiting resistance will typically be 82 Ω instead of 100 Ω for standard triacs. DC gate triggering is the simplest method that automatically achieves safe latch-off after the over-temperature trip protection has been activated. Alternatively, pulse triggering may be applied to the gate in combination with a low level bleed current (IG(bl)), to sustain the trip condition after the over-temperature trip protection has been activated. 11.3 Over-temperature protection If an overload current or insufficient cooling causes the junction temperature to rise above Ttrip, TOPTriac will disable its gate drive to prevent further conduction before it loses control or becomes damaged. When the over-temperature trip is activated, the Gate-to-Common voltage VG-CM reduces from the VGT to the VG(trip) level (please refer to the VGT and VG(trip) characteristics). Continuous DC gate drive sustains continued safe latch-off even after TOPTriac temperature has dropped below Ttrip. This allows a controlled reset by removing and reapplying gate drive after the fault condition has been removed. Pulsed gate drive, which may be preferred for phase control or for efficiency reasons, is combined with a low level bleed current IG(bI) to sustain latch-off when the over- temperature trip is activated. (Please refer to the IG(bI) limiting values for the minimum and maximum allowable bleed current that may be applied during pulse triggering). 11.4 Resetting after over-temperature As long as continuous gate current is applied after over-temperature trip, TOPTriac will remain deactivated even after the TOPTriac temperature has dropped below Ttrip. This is the safest protection method that allows the removal of the fault condition before controlled reset is implemented. TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac The simplest reset is user-controlled, where TOPTriac will remain in the safe shutdown condition until gate drive or power is removed and reapplied. Automatic reset will not require user intervention, but it may be ‘unintelligent/dumb’ open loop that does not involve a feedback stimulus, or ‘intelligent/smart’ closed loop that does respond to gate feedback. User-controlled reset. The user removes and reapplies power to the application or presses a ‘reset’ button that momentarily removes the gate drive. Open loop automatic reset. If there is a known or predictable overload conditon in the application that may cause an occasional overheat, a periodic discontinuity may be programmed into the gate drive (e.g. at the end of the program stage, once per hour, day or week, depending on the application) that allows automatic reset. For DC gate drive, removal of the gate drive achieves reset. For pulsed gate drive, IG(bI) must be removed and reapplied. The previous two examples will work for applications that do not require immediate reaction to a fault conditon, hence gate feedback monitoring is not needed. Closed loop automatic reset. Applications where an immediate reaction to an overtemperature trip is needed will require monitoring of TOPTriac status. This is possible by monitoring VG-CM while gate drive is being applied. During normal conduction, the higher level VGT will be apparent with a square wave at mains frequency superimposed upon it. (The square wave on the gate results from the load current.) During the over-temperature trip condition, the lower level VG(trip) will be apparent and there will be no AC ripple because no load current is flowing. The difference can be detected by the microcontroller, which can take the appropriate action that has been programmed according to the needs of the application. The following four figures show oscilloscope current and voltage waveforms for the four principal operating modes of TOPTriac: DC triggering, normal conduction and overtemperature tripped; pulse triggering, normal conduction and over-temperature tripped. The pulse triggering waveforms show phase control at the peak of the mains sine wave at half power setting. Channel 1 shows gate current (20mA/div). Channel 2 shows load current (5A/div). Channel 3 shows gate voltage VG-CM (1V/div). Channel 4 shows load voltage VLD-CM (200V/div). TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 003aaj331 003aaj330 Fig. 13. DC triggering, over-temperature tripped Fig. 12. DC triggering, normal conduction 003aaj332 Fig. 14. Pulse triggering, normal conduction 003aaj333 Fig. 15. Pulse triggering, over-temperature tripped 11.5 Important characteristics Ttrip is the junction temperature at which TOPTriac will disable itself. It will be above 125 °C and below 150 °C . VGT is the gate voltage characteristic during normal triggering. It is higher than for normal triacs. VGT is used in the calculation of RG to set the gate trigger current. VG(trip) is the gate voltage characteristic when in the over-temperature trip condition. It is lower than VGT. VG(trip) is used in the calculation of RG(bI) to set the gate bleed current IG(bI). IG(bI) is used during pulse triggering. It is the continuous DC bleed current that must flow out of the gate to achieve clean latch-off at the trip point and maintain this safe latch-off condition as TOPTriac cools down to ambient temperature. The min IG(bI) value is the minimum bleed current to sustain latch-off after cooling. TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac The max IG(bI) value is the maximum bleed current that will not trigger TOPTriac up to maximum trip temperature. 11.6 How to calculate the bleed resistor RG(bI) When pulse triggering it is critical that the bleed current is set correctly. If IG(bI) is too low (lower than 0.5 mA), TOPTriac may not be able to provide reliable overtemperature protection during continuous fault conditions. Normal trip may be achieved at Ttrip, but self-reset may occur as it cools, leading to on-off cycling. This constitutes a loss of control and should be avoided. If IG(bI) is too high (higher than 2 mA), TOPTriac may trigger uncontrollably at elevated temperature that is below the trip temperature (This is another form of loss of control that must not be allowed). However, it will still self-protect as intended above trip temperature. The following examples show how to calculate the minimum and maximum RG(bI). The chosen value should be approximately mid-way between the two extremes. Example 1 (3.3 V logic supply) Maximum IG(bI) is 2 mA. During normal conduction when IG(bI) must not be high enough to cause false triggering, VGT applies and should be used in our calculations. Minimum VGT @ Tj(max) is 0.5 V. Therefore minimum RG(bI): RG(bl) = (3.3 - 0.5) / 2 mA = 1.4 kOhm Minimum IG(bI) is 0.5 mA. When tripped, VG(trip) applies and should be used in our calculations. IG(bI) must remain high enough to maintain the trip condition, even when VG(trip) is at a maximum. Maximum VG(trip) is 0.9 V. Therefore minimum RG(bI): RG(bl) = (3.3 - 0.9) / 0.5 mA = 4.8 kOhm Suggested RG(bI) is 3 kΩ. Example 2 (5 V logic supply) Min RG(bI): RG(bl) = (5 - 0.5) / 2 mA = 2.25 kOhm Max RG(bI): RG(bl) = (5 - 0.9) / 0.5 mA = 8.2 kOhm Suggested RG(bI) is 5.1 kΩ. Example 3 (12 V auxiliary gate drive supply) Min RG(bI): RG(bl) = (12 - 0.5) / 2 mA = 5.75 kOhm Max RG(bI): RG(bl) = (12 - 0.9) / 0.5 mA = 22.2 kOhm TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac Suggested RG(bI) is 15 kΩ. 11.7 Application schematics The following schematics show possible implementations of TOPTriac. Gate trigger current is from a 5 V minimum logic supply. It is possible to trigger from a 3.3 V microcontroller by using a transistor level shifter to a higher voltage gate drive power supply, which may be 5 V minimum or the 12 V supply that may already be available for other loads such as lighting, indication and sounders. For DC triggering, reset is achieved by removing the gate drive at any time and reapplying it after TOPTriac temperature has dropped below Ttrip. For pulse triggering, reset is achieved by removing and reapplying the gate bleed current IG(bI) after TOPTriac temperature has dropped below Ttrip. IG(bI) is set by RG(bI). It is best derived directly from the low voltage microcontroller supply (up to 5V max) and will most likely be direct drive from the microcontroller output. In all of the following circuits, gate trigger and gate bleed current are applied by logic zero drive from the microcontroller. Fig. 16. DC triggering from 5 V microcontroller Fig. 17. Pulse triggering from 5 V microcontroller Fig. 18. DC triggering from 3.3 V microcontroller Fig. 19. Pulse triggering from 3.3 V microcontroller TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 14 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 12. Package outline Plastic single-ended package;heatsink mounted;1 mounting hole; 3 leads TO-220AB E TO220 A A1 D1 D D2 q ØP L1 E1 L b1 e TOPT16-800C0 Product data sheet Q All information provided in this document is subject to legal disclaimers. 22 August 2018 b © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 15 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 13. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Product [short] data sheet Production This document contains the product specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. [1 ] [2] [3] Definition Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. TOPT16-800C0 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 16 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 17 / 18 TOPT16-800C0 WeEn Semiconductors TOPTriac 14. Contents 1. General description........................................................1 2. Features and benefits....................................................1 3. Applications....................................................................1 4. Quick reference data......................................................1 5. Pinning information........................................................2 6. Ordering information......................................................2 7. Marking............................................................................2 8. Limiting values...............................................................3 9. Thermal characteristics.................................................6 10. Characteristics.............................................................7 11. Application information.............................................10 12. Package outline..........................................................15 13. Legal information.......................................................16 14. Contents.......................................................................18 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 22 August 2018 TOPT16-800C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 18 / 18