MAC212A8

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 Preferred Device   Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Four Modes • Device Marking: Logo, Device Type, e.g., MAC212A8, Date Code http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 4 Rating Symbol Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC212A8 MAC212A10 VDRM, VRRM On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 12 Amp ITSM 100 Amp I2t 40 A2s Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range PGM Value Unit Volts 600 800 20 Watts PG(AV) 0.35 Watt IGM 2.0 Amp TJ −40 to +125 °C Tstg −40 to +150 °C March, 2000 − Rev. 1 2 3 TO−220AB CASE 221A STYLE 4 PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  Semiconductor Components Industries, LLC, 1999 1 127 Device Package Shipping MAC212A8 TO220AB 500/Box MAC212A10 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC212A8/D MAC212A8, MAC212A10 THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RθJC RθJA 2.0 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit — — — — 10 2.0 µA mA — 1.3 1.75 Volts OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = +125°C ON CHARACTERISTICS Peak On-State Voltage ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2% VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C) All Four Quadrants VGD mA — — — — 12 12 20 35 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 Volts 0.2 — — Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA) IH — 6.0 50 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs dv/dt(c) — 5.0 — V/µs dv/dt — 100 — V/µs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) http://onsemi.com 128 MAC212A8, MAC212A10 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Repetitive Forward Off State Voltage VRRM IRRM Peak Repetitive Reverse Off State Voltage VTM IH Maximum On State Voltage VTM Quadrant 1 MainTerminal 2 + on state Peak Forward Blocking Current IH IRRM at VRRM Peak Reverse Blocking Current off state IH Holding Current Quadrant 3 VTM MainTerminal 2 − Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 129 + Voltage IDRM at VDRM ++++5!+,.+ +"!++++  °   α  $
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