BAV103 L1G

BAV101/BAV103 Taiwan Semiconductor 200mA, 250V Switching Diode FEATURES KEY PARAMETERS ● ● ● ● Low power loss, high efficiency Ideal for automated placement High surge current capability Compliance to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 200 mA VRRM 250 V IFSM 4 A VF at IF=100mA 1.00 V TJ MAX 200 °C APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter Package MINI MELF Configuration Single dice MECHANICAL DATA ● Case: MINI MELF ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ● Weight: 0.06 (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Repetitive peak reverse voltage Forward current Non-repetitive peak forward Pulse width = 1.0 s surge current Pulse width = 1.0 μs Junction temperature range SYMBOL PART NUMBER UNIT VRRM IF(AV) V mA TJ 250 200 1 4 -65 ~ 200 TSTG -65 ~ 200 °C SYMBOL LIMIT UNIT RӨJA 300 °C/W IFSM Storage temperature range A °C THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version:D1610 BAV101/BAV103 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode (1) SYMBOL TYP MAX UNIT VF -- 1 V -- 100 nA -- 100 nA -- 4 ρF IF = 100mA, TJ = 25°C BAV101 VR=100V TJ = 25°C Reverse current @ rated VR per diode (2) BAV103 IR VR=200V TJ = 25°C 1 MHz, VR=0V Junction capacitance CJ Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKING PACKING CODE CODE SUFFIX BAV10X L0 (Note 1&2) L1 PACKAGE PACKING 10K / 13" Reel G MINI MELF 2.5K / 7" Reel Notes: 1. "x" is device code is "1" & "3" 2. Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE BAV101 L0G BAV101 L0 PACKING CODE SUFFIX G 2 DESCRIPTION Green compound Version:D1610 BAV101/BAV103 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Reverse Current VS. Junction Temperature Forward Current VS. Forward Voltage 1000 100 IF - Forward Current (mA) IR - Reverse Current (uA) 1000 Scattering Limit 10 1 0.1 VR = VRRM TJ=25°C 100 Scattering Limit 10 1 0.01 0 40 80 120 160 0.1 200 0 ° Tj - Junction Temperature ( C) 0.4 0.8 1.2 1.6 2 VF - Forward Voltage (V) Differential Forward Resistance VS. Forward Current rf - Differential Forward Resistance (Ohm) 1000 100 10 1 0.1 1 10 100 IF - Forward Current (mA) 3 Version:D1610 BAV101/BAV103 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION MINI MELF DIM. C Unit(mm) Unit(inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.50 0.008 0.020 B A SUGGEST PAD LAYOUT DIM. 4 Unit(mm) Unit(inch) Typ. Typ. A 1.25 0.049 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 Version:D1610 BAV101/BAV103 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version:D1610