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SST12B-800CW

SST12B-800CW

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO-220-3

  • 描述:

    800V 12A PACKAGE TO-220B 3-QUADR

  • 数据手册
  • 价格&库存
SST12B-800CW 数据手册
SST12 Series Technical Data Data Sheet N2145, Rev.- SST12 Series 12A TRIACs Circuit Diagram TO-220A(Ins) TO-220B(Non-Ins) Description With high ability to withstand the shock loading of large current, SST12 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Maximum Ratings: Characteristics Symbol Storage junction temperature range Condition Max. Units Tstg - -40-150 ℃ Tj - -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 600/800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V 12 A 120 A Operating junction temperature range RMS on-state current Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power I(TRMS) ITSM TO-220A(Ins)(TC=90℃) TO-220B(Non-Ins)(TC=105℃) - I2t - 78 A2 s dI/dt - 50 A/μs IGM 4 A PG(AV) - 1 W PGM - 5 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST12 Series Technical Data Data Sheet N2145, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) 3 Quadrants Symbol IGT Test Condition VD =12V RL =33Ω VGT VD =VDRM Tj =125℃ RL =3.3KΩ VGD Value Quadrant BW CW 50 35 Unit Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ 80 50 90 60 IL IG =1.2IGT IH IT =100mA MAX 60 40 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 1000 500 V/μs dV/dt Ⅱ MAX mA 4 Quadrants Symbol Test Condition Ⅰ-Ⅱ-Ⅲ IGT VD =12V RL =33Ω Ⅳ VGT VD =VDRM Tj =125℃ RL =3.3KΩ VGD Value Quadrant MAX B C 50 25 70 50 mA Unit mA ALL MAX 1.3 V ALL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ 50 40 80 IG =1.2IGT IH IT =100mA MAX 50 25 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 500 200 V/μs dV/dt Ⅱ MAX 100 IL mA Static Characteristics Symbol VTM Parameter ITM =17A tp=380μs IDRM IRRM VD =VDRM VR =VRRM Value(MAX) Unit Tj=25℃ 1.5 V Tj=25℃ 5 μA Tj=125℃ 1 mA Value Units TO-220A(Ins) 2.3 ℃/W TO-220B(Non-Ins) 1.4 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST12 Series Technical Data Data Sheet N2145, Rev.- Ordering Information S ST 12 A -800 BW SMC Diode Solutions BW: IGT1-3 ≤ 50mA CW: IGT1-3 ≤ 35mA Triacs IT(RMS):12A 600:VDRM/VRRM ≥ 600V 800:VDRM/VRRM ≥ 800V A: TO-220A(Ins) B:TO-220B(Non-Ins) Device SST12A-800CW, SST12A-800BW, SST12A-600BW SST12B-800CW, SST12B-800BW Package TO-220A(Ins) TO-220B(Non-Ins) Shipping 50pcs/ Tube 50pcs/ Tube Marking Diagram Where XXXXX is YYWWL SST12A-800BW SST12B-800BW YY WW L = Part name = Part name = Year = Week = Lot Number Mechanical Dimensions TO-220A(Ins) SYMBOL Millimeters Min. A B C C2 C3 D E F G H L1 L2 L3 V1 4.40 0.61 0.46 1.21 2.40 8.60 9.60 6.55 28.0 1.14 2.65 Typ. 2.54 3.75 45° Inches Max. Min. 4.60 0.88 0.70 1.32 2.72 9.70 10.4 6.95 0.173 0.024 0.018 0.048 0.094 0.339 0.378 0.258 29.8 1.102 1.70 2.95 0.045 0.104  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Typ. 0.1 0.148 45° Max. 0.181 0.035 0.028 0.052 0.107 0.382 0.409 0.274 1.173 0.067 0.116 SST12 Series Technical Data Data Sheet N2145, Rev.- Mechanical Dimensions TO-220B(Non-Ins) SYMBOL Millimeters Min. A B C C2 C3 D E F G H L1 L2 L3 V1 4.40 0.61 0.46 1.21 2.40 8.60 9.60 6.20 28.0 1.14 2.65 Typ. 2.54 3.75 45° Inches Max. Min. 4.60 0.88 0.70 1.32 2.72 9.70 10.4 6.60 0.173 0.024 0.018 0.048 0.094 0.339 0.378 0.244 29.8 1.102 1.70 2.95 0.045 0.104 Typ. 0.1 0.148 45° Max. 0.181 0.035 0.028 0.052 0.107 0.382 0.409 0.260 1.173 0.067 0.116 Ratings and Characteristics Curves FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(w) 18 IT(RMS) (A) 18 15 15 12 12 9 9 6 6 3 3 0 0 3 IT(RMS) (A) 6 9 12 16 0 0 α=180° TO-220B(Non-Ins) TO-220A(Ins) Tc (℃) 25 50 75  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  100 125 SST12 Series Technical Data Data Sheet N2145, Rev.- FIG.3: Surge peak on-state current versus number of cycles 150 FIG.4: On-state characteristics (maximum values) ITM (A) 200 ITSM (A) t=20ms 100 One cycle 120 Tj=Tjmax 90 10 60 Tj=25℃ 30 Number of cycles 10 100 0 1 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp
SST12B-800CW 价格&库存

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