SST41Z-800B

SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW Technical Data Data Sheet N2034, Rev.- SST41 Series 40A TRIACs Circuit Diagram TO-3P Insulated Description With high ability to withstand the shock loading of large current, SST41 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, SST41Z provides a rated insulation voltage of 2500 VRMS. Maximum Ratings: Characteristics Symbol Storage junction temperature range TJ Operating junction temperature range Repetitive peak off-state voltage Repetitive peak reverse voltage Condition Max. Units - -40 to +125 Tstg - -40 to +150 C VDRM - 600/800/1200/1600 V VRRM - 600/800/1200/1600 V Non repetitive peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) 40 A 400 A Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Peak gate power ITSM TO-3P(Ins)(TC=80℃) - C 2 It - 880 A2 s dI/dt - 50 A/us IGM 4 A PGM - 1 W PG(AV) - 10 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW Technical Data Data Sheet N2034, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) 3 Quadrants Symbol IGT VGT VGD Test Condition Quadrant VD =12V RL =33Ω VD =VDRM Tj =125℃ RL=3.3KΩ Value Unit Ⅰ-Ⅱ-Ⅲ MAX 50 mA Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ 80 IL IG =1.2IGT IH IT =100mA MAX 60 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 1500 V/μs Value Unit dV/dt Ⅱ MAX 100 mA 4 Quadrants Symbol IGT Test Condition Quadrant Ⅰ-Ⅱ-Ⅲ VD =12V RL=33Ω Ⅳ VGT VGD VD =VDRM Tj =125℃, RL =3.3KΩ 50 MAX 70 mA ALL MAX 1.3 V ALL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ 90 IL IG =1.2IGT IH IT =100mA MAX 80 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 1000 V/μs dV/dt Ⅱ MAX 100 mA Static Characteristics Symbol VTM IDRM IRRM Condition IT=60A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ Max. Units 1.5 10 5 V uA mA Value Units 1.1 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC) TO-3P(Ins)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW Technical Data Data Sheet N2034, Rev.- Ordering Information S ST 41 Z -600 BW BW:IGT1-3 ≤ 50mA B:IGT1-3 ≤ 50mA IGT4 ≤ 70mA SMC Diode Solutions Triacs 600:VDRM/VRRM ≥ 600V 800:VDRM/VRRM ≥ 800V 1200:VDRM/VRRM ≥ 1200V 1600:VDRM/VRRM ≥ 1600V IT(RMS):40A Z:TO-3P(Ins) Device SST41Z-600B/SST41Z-800B SST41Z-600BW/SST41Z-800BW SST41Z-1200BW/SST41Z-1600BW Package Shipping TO-3P 30pcs/ Tube Marking Diagram Where XXXXX is YYWWL SST41Z-600B = Part name YY = Year WW = Week L = Lot Number Mechanical Dimensions TO-3P SYMBOL Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J K L P R 5.40 1.10 1.35 2.80 5.65 1.40 1.50 3.00 0.213 0.043 0.053 0.110 0.222 0.055 0.059 0.118 4.35  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  0.171 SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW Technical Data Data Sheet N2034, Rev.- Ratings and Characteristics Curves FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(w) 60 IT(RMS) (A) 60 50 50 40 40 30 30 20 20 10 10 0 0 IT(RMS) (A) 20 30 10 40 50 FIG.3: Surge peak on-state current versus number of cycles 500 0 α=180° TO-3P(Ins) Tc (℃) 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 400 ITSM (A) t=20ms One cycle 400 Tj=Tjmax 100 300 200 10 100 Tj=25℃ Number of cycles 10 100 0 1 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp