CCS050M12CM2
VDS 1.2 kV
1.2kV, 25mΩ All-Silicon Carbide
Six-Pack (Three Phase) Module
C2M MOSFET and Z-RecTM Diode
ESW, Total @ 50A, 150 C
RDS(on)
Features
•
•
•
•
•
•
25 mΩ
Package
Ultra Low Loss
Zero Reverse Recovery Current
Zero Turn-off Tail Current
High-Frequency Operation
Positive Temperature Coefficient on VF and VDS(on)
Cu Baseplate, AlN DBC
System Benefits
•
•
•
•
•
1.7 mJ
˚
Enables Compact and Lightweight Systems
High Efficiency Operation
Ease of Transistor Gate Control
Reduced Cooling Requirements
Reduced System Cost
Applications
•
•
•
•
•
•
Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Part Number
Package
Marking
CCS050M12CM2
Six-Pack
CCS050M12CM2
Maximum
Ratings (TC = 25˚C unless otherwise specified)
Symbol
2,Rev. E
Value
Unit
Test Conditions
VDS
Drain - Source Voltage
1.2
kV
VGS
Gate - Source Voltage
-10/+25
V
Absolute maximum values
VGS
Gate - Source Voltage
-5/+20
V
Recommended operational values
ID
S050M12CM
Datasheet: CC
Parameter
ID(pulse)
IF
IFSM
TJ
TC ,TSTG
87
Continuous Drain Current
59
Pulsed Drain Current
250
Continuous Diode Forward Current
Non-Repetitive Diode Forward Surge
Current
102
62
A
A
A
400
A
Junction Temperature
-40 to +150
˚C
Case and Storage Temperature Range
-40 to +125
˚C
VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
Pulse width tP limited by Tjmax
Notes
Fig. 26
Fig. 28
VGS = -5 V, TC = 25 ˚C
VGS = -5 V, TC = 90 ˚C
VGS = -5 V, TC = 110 ˚C, tP = 10 ms,
Half Sine Pulse,
Visol
Case Isolation Voltage
5.0
kV
AC, 50 Hz, 1 min
LStray
Stray Inductance
30
nH
Measured from pins 25-26 to 27-28
PD
Power Dissipation
312
W
TC = 25 ˚C, TJ ≤ 150 ˚C
Subject to change without notice.
www.cree.com
Fig. 27
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain - Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
Max.
1.2
kV
2.3
V
1.6
2
On State Resistance
Unit
Test Conditions
VGS, = 0 V, ID = 250 µA
VD = VG, ID = 2.5 mA
VDS = 10 V, ID = 2.5 mA, TJ = 150 ˚C
250
μA
VDS = 1.2 kV, VGS = 0V
100
nA
VGS = 25 V, VDS = 0V
25
36
43
63
22
mΩ
VGS = 20 V, IDS = 50 A
VGS = 20 V, IDS = 50 A, TJ = 150 ˚C
VDS = 20 V, IDS = 50 A
Figs.
4-7
gfs
Transconductance
Ciss
Input Capacitance
2.810
Coss
Output Capacitance
0.393
Crss
Reverse Transfer Capacitance
0.014
Eon
Turn-On Switching Energy
1.1
mJ
EOff
Turn-Off Switching Energy
0.6
mJ
Internal Gate Resistance
1.5
Ω
f = 1 MHz, VAC = 25 mV
QGS
Gate-Source Charge
32
QGD
Gate-Drain Charge
30
nC
VDD= 800 V, ID= 50 A
Fig. 15
QG
Total Gate Charge
180
td(on)
Turn-on delay time
21
ns
Rise time
30
ns
Turn-off delay time
50
ns
Figs.
20-25
Fall time
19
ns
VDD = 800V, RLOAD = 8 Ω
VGS = +20/-2V, RG = 3.8 Ω
TJ = 25 ˚C
Note: IEC 60747-8-4 Definitions
RG (int)
tr
td(off)
tf
S
Note
21
VSD
Diode Forward Voltage
QC
Total Capacitive Charge
nF
1.5
1.8
2.0
2.3
0.28
V
VDS = 20 V, ID = 50 A, TJ = 150 ˚C
Fig. 8
VDS = 800 V, VGS = 0 V
f = 1 MHz, VAC = 25 mV
Figs.
16,17
VDD = 600 V, VGS = +20V/-5V
ID = 50 A, RG = 20 Ω
Load = 200 μH TJ = 150 ˚C
Note: IEC 60747-8-4 Definitions
Fig. 18
IF = 50 A, VGS = 0
Figs.
10-11
IF = 50 A, TJ = 150 ˚C
μC
Thermal Characteristics
Symbol
Parameter
Min.
Typ.
Max.
RthJCM
Thermal Resistance Juction-to-Case for MOSFET
0.37
0.40
RthJCD
Thermal Resistance Juction-to-Case for Diode
0.42
0.43
Unit
˚C/W
Test Conditions
Note
Tc = 90 ˚C, PD = 150 W
Tc = 90 ˚C, PD = 130 W
NTC Characteristics
Symbol
R25
Delta R/R
P25
B25/50
Condition
Typ.
TC = 25 °C
Max.
5
TC = 100 °C, R100 = 481 Ω
kΩ
±5
TC = 25 °C
3380
Additional Module Data
2
Condition
W
Weight
M
Mounting Torque
%
mW
R2 = R25 exp[B25/50(1/T2-1/(298.15K))]
Symbol
Unit
CCS050M12CM2,Rev. E
Max
Unit
180
g
5
Nm
Test Condition
To heatsink
K
Typical Performance
200
160
120
80
VGS = 10 V
40
0
3
6
9
12
Drain-Source Voltage, VDS (V)
15
On Resistance, RDS On (p.u.)
Drain Current, IDS (A)
VGS = 10 V
80
9
12
Drain-Source Voltage, VDS (V)
9
12
15
Conditions:
IDS = 50 A
VGS = 20 V
tp < 50 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.0
6
6
Drain-Source Voltage, VDS (V)
0.2
VGS = 5 V
3
3
Figure 2. Typical Output Characteristics TJ = 25 ˚C
1.6
40
15
-50
-25
0
25
50
75
Junction Temperature, TJ (°C)
100
125
150
Figure 3. Typical Output Characteristics TJ = 150 ˚C
Figure 4. Normalized On-Resistance vs. Temperature
60
100
Conditions:
VGS = 20 V
tp < 50 µs
Conditions:
IDS = 50 A
tp < 50 µs
90
80
TJ = 150 °C
On Resistance, RDS On (mΩ)
50
On Resistance, RDS On (mΩ)
0
1.8
VGS = 15 V
0
VGS = 10 V
VGS = 5 V
VGS = 20 V
120
0
80
2.0
Conditions:
TJ = 150 °C
tp < 50 µs
160
120
0
Figure 1. Typical Output Characteristics TJ = -40 ˚C
200
VGS = 15 V
40
VGS = 5 V
0
VGS = 20 V
Conditions:
TJ = 25 °C
tp < 50 µs
VGS = 15 V
Drain Current, IDS (A)
Drain Current, IDS (A)
160
200
VGS = 20 V
Conditions:
TJ = -40 °C
tp < 50 µs
TJ = 125 °C
40
30
TJ = 25 °C
TJ = -40 °C
20
10
70
TJ = -40 °C
60
50
TJ = 150 °C
40
TJ = 25 °C
30
20
10
0
0
25
50
Drain Source Current, IDS (A)
75
100
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
3
CCS050M12CM2,Rev. E
0
12
13
14
15
16
17
Gate Source Voltage, VGS (V)
18
19
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
20
Typical Performance
100
80
VGS = 12 V
70
60
50
VGS = 14 V
40
VGS = 16 V
30
VGS = 18 V
20
VGS = 20 V
TJ = 150 °C
Conditions:
tp < 50 µs
Drain-Source Current, IDS (A)
90
On Resistance, RDS On (mΩ)
100
Conditions:
IDS = 50 A
tp < 50 µs
80
60
TJ = 25 °C
40
TJ = -40 °C
20
10
0
-50
-25
0
25
50
75
Junction Temperature, TJ (°C)
100
125
0
150
Figure 7. On-Resistance vs. Temperature
for Various Gate-Source Voltages
-3
-2.5
-2
-1.5
-1
-0.5
0
2
4
6
8
10
Gate-Source Voltage, VGS (V)
12
Figure 8. Transfer Characteristic for Various
Junction Temperatures
0
-3
0
-2.5
-2
-1.5
-1
-0.5
0
0
VGS = -5 V
Drain-Source Current, IDS (A)
VGS = 0 V
-25
-50
-75
Drain-Source Currnmt, IDS (A)
VGS = -2 V
-25
-50
-75
Conditions:
TJ = -40 °C
tp < 50 µs
VGS = -2 V
VGS = -5 V
-100
Drain-Source Voltage, VDS (V)
-2.5
-2
-1.5
-1
-0.5
VGS = 0 V
-100
Drain-Source Voltage, VDS (V)
Figure 10. Diode Characteristic at 25 ˚C
Figure 9. Diode Characteristic at -40 ˚C
-3
Conditions:
TJ = 25 °C
tp < 50 µs
0
-3
0
-2.5
-2
-1.5
-1
VGS = 0 V
-0.5
0
0
VGS = 10 V
-25
-50
VGS = 0 V
VGS = -5 V
-75
VGS = 20 V
Drain-Source Voltage, VDS (V)
Figure 11. Diode Characteristic at 150 ˚C
CCS050M12CM2,Rev. E
-25
VGS = 15 V
-50
-75
Conditions:
TJ = -40 °C
tp < 50 µs
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = -2 V
4
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 5 V
-100
-100
Drain-Source Voltage, VDS (V)
Figure 12. 3rd Quadrant Characteristic at -40 ˚C
Typical Performance
-3
-2.5
-2
-1.5
-1
-0.5
0
-3
0
-2.5
-2
-1.5
VGS = 0 V
-1
-0.5
0
0
VGS = 0 V
-25
VGS = 10 V
VGS = 15 V
-50
VGS = 20 V
-75
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 5 V
-25
VGS = 5 V
VGS = 10 V
-50
VGS = 15 V
-75
Conditions:
TJ = 25 °C
tp < 50 µs
-100
Drain-Source Voltage, VDS (V)
Figure 14. 3rd Quadrant Characteristic at 150 ˚C
10000
Conditions:
VDS = 800 V
IDS = 50 A
IGS = 10 mA
15
CISS
1000
Capacitance (pF)
Gate-Source Voltage, VGS (V)
20
10
5
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
0
30
60
90
Gate Charge (nC)
120
150
1
180
50
100
150
200
250
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 250 V)
3.0
Conditions:
VDD = 600 V
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
CISS
2.5
1000
Switching Loss (mJ)
COSS
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
1
0
Drain-Source Voltage, VDS (V)
10000
Capacitance (pF)
COSS
100
0
Figure 15. Typical Gate Charge Characteristics
0
Eon
2.0
Eoff
1.5
1.0
0.5
250
500
750
Drain-Source Voltage, VDS (V)
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
5
-100
Drain-Source Voltage, VDS (V)
Figure 13. 3rd Quadrant Characteristic at 25 ˚C
-5
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = 20 V
CCS050M12CM2,Rev. E
1000
0.0
0
25
50
75
100
Drain to Source Current, IDS (A)
Figure 18. Inductive Switching Energy vs.
Drain Current For VDS = 600V, RG = 20 Ω
125
Typical Performance
4.5
3.5
ton
Eon
Time, ton, tr, td(on) (ns)
4.0
Switching Loss (mJ)
100
Conditions:
VDD = 800 V
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
3.0
Eoff
2.5
2.0
1.5
td(on)
tr
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
1.0
0.5
0.0
0
25
50
75
100
10
125
1
10
Figure 19. Inductive Switching Energy vs.
Drain Current For VDS = 800 V, RG = 20 Ω
Figure 20. Turn-on Timing vs. Drain Current
1000
Time, ton, tr, td(on) (ns)
Time, toff, tf, td(off (ns)
10000
1000
toff
td(off)
100
10
tf
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
1
10
Figure 21. Turn-off Timing vs. Drain Current
10000
1
10
Figure 22. Turn-on Timing vs. External Gate Resistor
toff
tr
tr
td(on)
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
RLoad = 16 Ohms
10
100
Gate Resistance, RG (Ohms)
Figure 23. Turn-off Timing vs. External Gate Resistor
6
100
Gate Resistance, RG (Ohms)
Time, ton, tr, td(on) (ns)
Time, toff, tf, td(off (ns)
10
10
1
td(on)
ton
td(off)
100
tr
ton
100
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V
TJ = 25 °C
1000
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V
TJ = 25 °C
100
100
Drain-Source Current, IDS (A)
100
Drain-Source Current, IDS (A)
Drain to Source Current, IDS (A)
CCS050M12CM2,Rev. E
10
0
20
40
60
80
100
Junction Temperature, TJ (°C)
120
140
Figure 24. Turn-on Timing vs. Junction Temperature
160
Typical Performance
100
Drain-Source Continous Current, IDS (DC) (A)
Time, toff, tf, td(off (ns)
1000
toff
td(off)
100
tf
10
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
RLoad = 16 Ohms
0
20
60
80
100
Junction Temperature, TJ (°C)
120
140
70
60
50
40
30
20
10
160
350
Conditions:
TJ ≤ 150 °C
-20
250
200
150
100
-40
-20
0
20
40
60
80
100
Case Temperature, TC (°C)
120
140
120
140
160
100 µs
10.00
100 ms
1.00
0.10
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Figure 28. MOSFET Safe Operating Area
Diode Junction-Case Thermal Response, Zth JC
(°C/W)
MOSFET Junction-Case Thermal Response, Zth JC
(°C/W)
100
1
D = 50%
D = 30%
D = 10%
D = 5%
D = 2%
D = 1%
D = 0.5%
tp
D = 0.2%
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
Figure 29. MOSFET Junction to Case Thermal Impedance
CCS050M12CM2,Rev. E
D = 90%
D = 70%
D = 50%
D = 30%
0.1
D = 10%
D = 5%
0.01
D = 2%
D = 1%
D = 0.5%
tp
D = 0.2%
Single Pulse
T
Single Pulse
1E-6
D = tp / T
Time (s)
7
80
1 ms
160
D = 90%
D = 70%
0.001
60
Limited by RDS On
1
0.01
40
Case Temperature, TC (°C)
1 µs
Figure 27. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature
0.1
20
10 µs
50
0
0
100.00
Drain-Source Current, IDS (A)
300
-40
Figure 26. Continous Drain Current Derating vs Case
Temperature
Figure 25. Turn-on Timing vs. Junction Temperature
Maximum Dissipated Power, Ptot (W)
80
0
40
Conditions:
TJ ≤ 150 °C
90
0.001
1E-6
10E-6
D = tp / T
T
100E-6
1E-3
10E-3
100E-3
1
10
Time (s)
Figure 30. Diode Junction to Case Thermal Impedance
Typical Performance
NTC Resistance (Ohms)
100000
10000
1000
100
10
-50
-25
0
25
50
75
NTC Temperature (°C)
100
125
150
Figure 31. NTC Resistance vs NTC Temperature
Figure 32. Resistive Switching Time Description
Creepage and Clearance Data
Distance
Creepage
Clearance
Minimum Distance Between Two High Voltage Pins
11.9 mm
6.5 mm
Distance Between High Voltage Pin and Isolated Baseplate
15.6 mm
15.6 mm
Distance Between High Voltage Pin and Mounting Bolt’s Head
19.1 mm
8.6 mm
Distance Between High Voltage Pin and Isolated NTC Pin
16.7 mm
11.8 mm
8
CCS050M12CM2,Rev. E
Package Dimensions (mm)
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
9
CCS050M12CM2,Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Recommendations for PCB mounting stand-offs
In order to mount the PCB onto the module, it is recommended to use four PCB mounting stand-offs by using
self-tapping screws. Following is the recommended self-tapping screw with its torque requirements:
> Ejot DELTA
PT WN 5451 K25x8
: Mmax = 0.4Nm ± 10%
Installation of self-tapping screws can be done both by hand or by using an electric screw driver. For an electric
screw driver the recommended maximum speed is 300 RPM.
(Note: Do not use pneumatic screw driver to install self-tapping screws).
The recommended effective length of screw threads entering the PCB mounting stand-offs should be in between
4mm to 6.5mm range.
(Note: Self-tapping screws must be inserted straight into the PCB mounting stand-offs)
PCB mounting stand-offs (Marked Red)
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
10
CCS050M12CM2,Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems.
Module Application Note:
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules.
Therefore, special precautions are required to realize the best performance. The interconnection between the gate
driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the
potential for device oscillation. Also, great care is required to insure minimum inductance between the module and
link capacitors to avoid excessive VDS overshoots.
Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2.
[CPWR-AN12, CPWR-AN13]
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
11
CCS050M12CM2,Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
