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TSM6963SDCA RVG

TSM6963SDCA RVG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TSSOP-8

  • 描述:

    MOSFET 2 P-CH 20V 4.5A 8TSSOP

  • 数据手册
  • 价格&库存
TSM6963SDCA RVG 数据手册
TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -20 ID (A) 30 @ VGS = -4.5V -4.5 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V -2 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. TSM6963SDCA RVG Package Packing TSSOP-8 3Kpcs / 13” Reel Dual P-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -4.5 A IDM -16 A IS -1.0 A Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) a,b Ta = 25°C 1.14 Maximum Power Dissipation PD Ta = 70°C Operating Junction Temperature W 0.73 TJ +150 °C TJ, TSTG - 55 to +150 °C Symbol Limit Unit Junction to Foot (Drain) Thermal Resistance RӨJF 75 °C/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 90 °C/W Operating Junction and Storage Temperature Range Thermal Performance Parameter Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: DS_P0000129 1 Version: D15 TSM6963SD 20V Dual P-Channel MOSFET Electrical Specifications (Ta =25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0V, ID =-250uA BVDSS -20 -- -- V Gate Threshold Voltage VDS =VGS, ID =-250uA VGS(TH) -0.5 -0.7 -1.0 V Zero Gate Voltage Drain Current VDS =-16V, VGS =0V IDSS -- -- -1 uA Gate Body Leakage VGS =±12V, VDS =0V IGSS -- -- ±100 nA On-State Drain Current VDS =-5V, VGS =-4.5V ID(ON) -25 -- -- A -- 23 30 -- 30 42 -- 45 68 VGS =-4.5V, ID =-4.5A Drain-Source On-State Resistance VGS =-2.5V, ID =-3A RDS(ON) VGS =-1.8V, ID =-2A mΩ Forward Transconductance VDS =-5V, ID =-4.5A gfs -- 16 -- S Diode Forward Voltage b Dynamic IS =-0.5A, VGS =0V VSD -- - 0.8 -1.3 V Qg -- 14 20 Qgs -- 2.1 10 Qgd -- 4.7 -- Ciss -- 1500 -- Coss -- 220 -- Crss -- 160 -- td(on) -- 6 11 tr -- 13 23 td(off) -- 86 145 -- 42 70 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS =-10V, ID =-4.5A, VGS =-4.5V VDS =-10V, VGS =0V, f =1.0MHz nC pF b,C Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD =-10V, RL =10Ω, ID =-1A, VGEN =-4.5V, RG =6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤ 300µS, duty cycle ≤ 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Document Number: DS_P0000129 2 nS Version: D15 TSM6963SD 20V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000129 3 Version: D15 TSM6963SD 20V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000129 4 Version: D15 TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 Mechanical Drawing DIM A a B C D E e F L TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.05 1.20 0.041 0.049 0.05 0.15 0.002 0.009 0.127 0.005 0.50 0.70 0.020 0.028 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000129 5 Version: D15 TSM6963SD 20V Dual P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000129 6 Version: D15
TSM6963SDCA RVG 价格&库存

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