BUK9K35-60RAX

BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 2 December 2020 Product data sheet 1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • • • Fully automotive qualified to AEC-Q101 at 175 °C Repetitive Avalanche rated to 30 °C Tj rise: • Tested to 1 Bn avalanche events LFPAK copper clip package technology: • High robustness and reliability • Gull wing leads for high manufacturability and AOI 3. Applications • • • • • 12 V, 24 V and 48 V automotive systems Repetitive avalanche topologies Engine control Transmission control Actuator and auxiliary loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 60 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 22 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 38 W VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 15 17 30.5 35 mΩ - 3 - nC Static characteristics FET1 and FET2 RDSon drain-source on-state resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 5 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 17; Fig. 18 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline 8 7 6 Graphic symbol 5 D1 D1 S1 D2 D2 G1 S2 G2 mbk725 1 2 3 4 LFPAK56D; Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package BUK9K35-60RA Name Description Version LFPAK56D; Dual LFPAK plastic, single ended surface mounted package (LFPAK56D); 8 leads SOT1205 7. Marking Table 4. Marking codes Type number Marking code BUK9K35-60RA 93560RA 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 60 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 10 V -15 15 V Tj ≤ 175 °C [1] [2] Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 38 W ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - 22 A VGS = 5 V; Tmb = 100 °C; Fig. 2 - 16 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 90 A IDM peak drain current Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 2 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Symbol Parameter Conditions Min Max Unit Source-drain diode FET1 and FET2 IS source current Tmb = 25 °C - 22 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 90 A [3] [4] [5] - 28.6 mJ [6] [7] - 19.5 mJ Avalanche ruggedness EDS(AL)R repetitive drain-source avalanche energy ID = 0.73 A; Vsup ≤ 60 V; RGS = 10 Ω; VGS =10 V; Tj(rise) ≤ 30 °C; unclamped; Fig. 4; Fig. 5; Fig. 6 Avalanche ruggedness FET1 and FET2 EDS(AL)S [1] [2] [3] [4] [5] [6] [7] non-repetitive drainID = 22 A; Vsup ≤ 60 V; VGS = 5 V; source avalanche energy Tj(init) = 25 °C; Fig. 7 Accumulated Pulse duration up to 50 hours delivers zero defect ppm. Significantly longer life times are achieved by lowering Tj and or VGS Repetitive avalanche rating is limited by maximum junction temperature of 175 °C and junction rise of 30 °C Refer to Fig. 5 for the limiting number of avalanche events Refer to Fig. 6 Rdson at Vgs=5V will increase as a function of repetitive avalanche cycles Refer to application note AN10273 for further information Single-pulse avalanche rating limited by maximum junction temperature of 175 °C 03aa16 120 003aaj574 30 ID (A) Pder (%) 80 20 40 10 0 0 50 100 150 Tmb (°C) 0 200 0 50 100 150 Tmb (° C) 200 VGS ≥ 5 V Fig. 2. Fig. 1. Normalized total power dissipation as a function of mounting base temperature BUK9K35-60RA Product data sheet Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 3 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology ID (A) 003aaj573 103 Limit RDSon = VDS / ID 102 tp = 10 us 10 100 us DC 1 10-1 1 ms 10 ms 100 ms 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse Fig. 3. IAL (A) Safe operating area; continuous and peak drain current as a function of drain-source voltage aaa-031582 102 aaa-031584 1010 No. Events 10 109 1 10-1 10-3 10-2 10-1 1 tAL (ms) 108 10 Tj is limited to 175 °C and Tj (rise) is limited to 30 °C Repetitive avalanche rating; avalanche current as a function of avalanche time % Increase of Rdson at 5V Vgs Fig. 4. Fig. 5. 1 10 EDS(AL) Per Event (mJ) 102 Repetitive avalanche rating; maximum number of avalanche events as a function of avalanche energy aaa-032338 50 40 30 20 10 0 Fig. 6. 1 10 % of cycle limit 102 Percentage Rdson at 5V increase as a function of avalanche cycles BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 4 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology IAL (A) aaa-031581 102 10 1 10-1 10-3 10-2 10-1 1 tAL (ms) 10 Tj (init) = 25 °C Fig. 7. Single pulse avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 8 junction to mounting base Conditions - - 3.96 K/W Rth(j-a) thermal resistance from Minimum footprint; mounted on a junction to ambient printed circuit board - 95 - K/W 003aaj683 10 Zth(j-mb) (K/W) δ = 0.5 0.2 1 0.1 0.05 0.02 P 10-1 single shot tp 10-2 10-6 Fig. 8. 10-5 δ= 10-4 10-3 10-2 tp T t T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 5 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 13; Fig. 14 1.4 1.7 2.1 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 13; Fig. 14 0.5 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 13; Fig. 14 - - 2.45 V VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 15 17 30.5 35 mΩ VGS = 5 V; ID = 5 A; Tj = 175 °C; Fig. 15; Fig. 16 - 65.27 79 mΩ VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 15 15.5 26.8 32 mΩ - 7.8 - nC - 1.2 - nC - 3 - nC - 811 1081 pF - 98 118 pF - 51 70 pF - 7.1 - ns - 11.3 - ns Static characteristics FET1 and FET2 V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics FET1 and FET2 QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 14.9 - ns tf fall time - 10.6 - ns ID = 5 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 17; Fig. 18 VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 19 VDS = 48 V; RL = 10 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C Source-drain diode FET1 and FET2 VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 20 - 0.78 1.2 V trr reverse recovery time - 17.6 - ns Qr recovered charge IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C - 12.1 - nC BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 6 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 003aaj563 40 003aaj564 80 ID (A) gfs (S) 30 60 20 40 10 20 Tj = 25 ° C Tj = 175 °C 0 Fig. 9. 0 10 20 ID (A) 0 30 Forward transconductance as a function of drain current; typical values 2 4 6 ID (A) 60 8 003aaj566 30 RDSon (mΩ ) VGS (V) Fig. 10. Transfer Characteristic: drain current as a function of gate-source voltage; typical values 003aaj565 80 0 4.5 10 3.5 V GS (V) = 3 20 40 2.8 10 20 2.6 2.4 0 0 4 8 12 VGS (V) 0 16 Fig. 11. Drain-source on-state resistance as a function of gate-source voltage; typical values BUK9K35-60RA Product data sheet 2.2 0 1 2 VDS (V) 3 Fig. 12. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 7 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 003aah025 3 VGS(th) (V) 2.5 003aah026 10-1 ID (A) 10-2 max 2 min 10-3 typ typ max 1.5 10-4 min 1 10-5 0.5 0 -60 0 60 120 Tj (° C) 10-6 180 Fig. 13. Gate-source threshold voltage as a function of junction temperature 2.6 2 V GS (V) 3 003aaj816 2.4 3 2.8 1 Fig. 14. Sub-threshold drain current as a function of gate-source voltage 003aaj571 130 RDSon (mΩ ) 110 0 a 1.6 90 70 VGS (V) = 3.5 50 0.8 4.5 10 30 10 2 10 18 26 ID (A) 0 -60 34 Fig. 15. Drain-source on-state resistance as a function of drain current; typical values BUK9K35-60RA Product data sheet 0 60 120 Tj ( °C) 180 Fig. 16. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 8 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 003aaj568 10 V GS (V) VDS VDS = 48 V 8 ID 14 V 6 VGS(pl) 4 VGS(th) VGS 2 QGS2 QGS1 QGS 0 QGD QG(tot) 10 15 Q G (nC) 20 Fig. 18. Gate-source voltage as a function of gate charge; typical values 003aaj569 C (pF) 003aaj570 30 IS (A) Ciss 103 5 003aaa508 Fig. 17. Gate charge waveform definitions 104 0 20 Coss 102 Crss 10 Tj = 175° C 10 1 10-1 1 10 VDS (V) 0 102 0 0.3 Tj = 25 °C 0.6 0.9 VSD (V) 1.2 Fig. 19. Input, output and reverse transfer capacitances Fig. 20. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 9 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 11. Package outline Plastic single ended surface mounted package LFPAK56D; 8 leads E SOT1205 A A b1 c1 L1 mounting base D H D1 D2 L 1 2 3 e b (8x) 4 w X c A E1 E2 A1 C θ Lp detail X 0 2.5 A max 1.05 nom min 1.02 mm 5 mm scale Dimensions Unit y C D(1) D1(1) D2 (ref) E(1) E1(1) 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60 A1 b b1 0.1 0.50 0.0 0.35 c c1 E2 e 1.27 H L L1 Lp 6.2 1.3 0.55 0.85 5.9 0.8 0.30 0.40 w y 0.25 0.1 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. Outline version References IEC JEDEC JEITA θ 8° 0° sot1205_po European projection Issue date 14-08-21 14-10-28 SOT1205 Fig. 21. Package outline LFPAK56D; Dual LFPAK (SOT1205) BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 10 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 12. Soldering Footprint information for reflow soldering of LFPAK56D package SOT1205 5.85 0.57 0.025 0.57 0.7 1.97 0.65 1.27 1.9 3.325 3.175 3.2 2.0 1.275 0.8 1.875 2.1 2.7 1.0 3.85 3.975 0.025 1.1 1.15 0.65 1.27 1.1 1.44 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm Issue date 0.7 14-07-28 20-04-20 sot1205_fr Fig. 22. Reflow soldering footprint for LFPAK56D; Dual LFPAK (SOT1205) BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 11 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 13. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 12 / 13 BUK9K35-60RA Nexperia Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Legal information......................................................12 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 2 December 2020 BUK9K35-60RA Product data sheet All information provided in this document is subject to legal disclaimers. 2 December 2020 © Nexperia B.V. 2020. All rights reserved 13 / 13