CAB425M12XM3

CAB425M12XM3 1200 V, 425 A All-Silicon Carbide Switching-Optimized, Half-Bridge Module Technical Features VDS 1200 V IDS 425 A 5 4 3 2 Package 80 x 53 x 19 mm D • • • • High Power Density Footprint High Junction Temperature (175 °C) Operation Low Inductance (6.7 nH) Design Implements Switching-Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate V+ V+ G1 K1 C Mid Applications • • • • NTC2 Motor & Traction Drives Vehicle Fast Chargers Uninterruptible Power Supplies Smart-Grid / Grid-Tied Distributed Generation G2 NTC K2 NTC1 VB System Benefits • Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design. • Isolated integrated temperature sensing enables high-level temperature protection. • Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrentTitle protection. A Size Document Number Custom Key Parameters (TC = 25˚C unless otherwise specified) Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -4 +19 VGS op Gate-Source Voltage, Recommended Operating Value -4 +15 Static 450 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20 ISD DC Source-Drain Current Max. Note 450 260 ISD pulsed Maximum Pulsed Source-Drain Current 800 -40 AC frequency ≥ 1 Hz Note 1 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 2 800 Note 1 Note 2 V 358 DC Source-Drain Current (Body Diode) Maximum Virtual Junction Temperature Under Switching Conditions Test Conditions 1200 IDS pulsed Maximum Pulsed Drain-Source Current TVJ op Unit 2 VDS max DC Continuous Drain Current Typ. Sheet 3 Parameter IDS Min. 4 Symbol ISD BD 1 Thursday, April 11, 2019 Date: 5 175 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C tp max limited by TVJ op VGS = 15 V, TC = 25 ˚C °C If MOSFET body diode is not used, VGS max = -8/+19 V Assumes RTH JC = 0.13 °C/W and RDS on = 5.1 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID max = √(PD / RDS on) Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. MOSFET Characteristics (Per Position) (TC = 25˚C unless otherwise specified) Symbol Parameter Min. VBR DSS Drain-Source Breakdown Voltage 1200 VGS th Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS RDS on 1.8 Typ. 2.5 3.6 Unit V 2.0 160 Gate-Source Leakage Current 0.05 1.3 Drain-Source On-State Resistance (MOSFET Only) 3.2 4.2 5.1 278 Transconductance EOn Turn-On Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 6.1 7.5 8.2 EOff Turn-Off Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 2.9 3.0 3.2 RG int Internal Gate Resistance 1.2 Ciss Input Capacitance 30.7 Coss Output Capacitance 1.2 Crss Reverse Transfer Capacitance 60 QGS Gate to Source Charge 320 QGD Gate to Drain Charge 385 QG Total Gate Charge 1135 FET Thermal Resistance, Junction to Case 0.13 Test Conditions Note VGS = 0 V, IDS = 500 μA VDS = VGS, IDS = 115 mA VDS = VGS, IDS = 115 mA, TJ = 175 °C 5 gfs RTH JC Max. μA mΩ S 270 mJ Ω nF pF nC 0.14 VGS = 0 V, VDS = 1200 V VGS = 15 V, VDS = 0 V VGS = 15 V, IDS = 425 A VGS = 15 V, IDS = 425 A, TJ = 175 °C VDS = 20 V, IDS = 425 A VDS = 20 V, IDS = 425 A, TJ = 175 °C VDS = 600 V, IDS = 425 A, VGS = -4 V / 15 V, RG ext = 0.0 Ω, L = 13.6 μH VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 2 Fig. 3 Fig. 4 Fig. 11 Fig. 13 Fig. 9 VDS = 800 V, VGS = -4 V/15 V ID = 425 A Per IEC 60747-8-4 pg. 21 °C/W Fig. 17 Body Diode Characteristics (Per Position) (TC = 25˚C unless otherwise specified) Symbol Parameter 2 Min. Typ. 5.4 Max. Unit VSD Body Diode Forward Voltage tRR Reverse Recovery Time 47 ns QRR Reverse Recovery Charge 9 IRR Peak Reverse Recovery Current 278 μC ERR Reverse Recovery Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 0.4 0.8 1.0 4.6 V A mJ Test Conditions VGS = -4 V, ISD = 425 A VGS = -4 V, ISD = 425 A, TJ = 175 °C Note Fig. 7 VGS = -4 V, ISD = 425 A, VDS = 600 V di/dt = 13.5 A/ns, TJ = 175 °C VDS = 600 V, IDS = 425 A, VGS = -4 V/15 V, RG ext = 0.0 Ω, L = 13.6 μH Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Fig. 14 Temperature Sensor (NTC) Characteristics Symbol Parameter R25 ∆R/R P25 Min. Rated Resistance Typ. Max. 4.7 Unit kΩ Tolerance of R25 ±1 % Maximum Power Dissipation 50 mW Max. Unit Test Conditions TNTC = 25 °C Module Physical Characteristics Symbol Parameter Min. R3-1 Package Resistance, M1 0.72 R1-2 Package Resistance, M2 0.63 Lstray Stray Inductance 6.7 TC Case Temperature W Weight MS Mounting Torque Visol Case Isolation Voltage 4.0 CTI Comparative Tracking Index 600 Clearance Distance -40 Note13 Note24 nH 125 Test Conditions TC = 125 °C, Note 3 & 41 TC = 125 °C, Note 3 & 4 Between Terminals 2 and 3 °C g 2.0 3.0 4.0 2.0 4.0 5.0 N-m kV Baseplate, M4 bolts Power Terminals, M5 bolts AC, 50 Hz, 1 min 12.5 From 2 to 3, Note24 11.5 From 1 to Baseplate, Note 4 5.7 From 2 to 5, Note 4 14.7 Creepage Distance mΩ 175 13.7 3 Typ. mm From 5 to Baseplate, Note 4 From 2 to 3, Note 4 14.0 From 1 to Baseplate, Note 4 14.7 From 2 to 5, Note 4 14.3 From 5 to Baseplate, Note 4 Total effective resistance (per switch position) = MOSFET RDS on + switch position package resistance Numbers reference the connections from the Schematic and Pin Out section of this document Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Performance 800 2.0 Drain-Source Current, IDS (A) 700 Normalized On-Resistance (p.u.) Conditions: tp < 300 μs VGS = 15 V 600 25 °C -40 °C 100 °C 500 400 300 125 °C 150 °C 175 °C 200 100 0 0.0 1.0 2.0 3.0 4.0 1.8 150 °C 1.6 125 °C 1.4 100 °C 1.2 -40 °C 25 °C 1.0 0.8 5.0 175 °C Conditions: tp < 300 μs VGS = 15 V 0 100 200 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristic for Various Junction Temperatures 1.8 1.6 1.4 700 Conditions: tp < 300 μs VGS = 15 V IDS = 425 A 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 0 50 100 150 600 500 200 25 °C 100 0 -40 °C 0.0 2.0 700 Source-Drain Current, ISD (A) Source-Drain Current, ISD (A) 800 8.0 25 °C -40 °C 175 °C 150 °C 125 °C 100 °C 400 300 1.0 2.0 25 °C 200 100 °C 125 °C 150 °C 175 °C 0.0 10.0 Conditions: tp < 300 μs VGS = 0.0 V 500 300 -40 °C 100 3.0 4.0 5.0 6.0 Source-Drain Voltage, VSD (V) Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 15 V 4 6.0 Figure 4. Transfer Characteristic for Various Junction Temperatures 500 0 4.0 600 100 800 Gate-Source Voltage, VGS (V) 600 200 700 300 200 Conditions: tp < 300 μs VGS = 15 V 400 600 175 °C 150 °C 125 °C 100 °C 400 Figure 3. Normalized On-State Resistance vs. Junction Temperature 700 500 Conditions: tp < 300 μs VDS = 20 V Virtual Junction Temperature, TJ (°C) 800 400 Figure 2. Normalized On-State Resistance vs. Drain Current for Various Junction Temperatures Drain-Source Current, IDS (A) Normalized On-Resistance (p.u.) 2.0 300 Drain-Source Current, IDS (A) 0 0.0 1.0 2.0 3.0 4.0 5.0 Source-Drain Voltage, VSD (V) Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures, VGS = 0 V (Body Diode) Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 6.0 Typical Performance 800 100.00 Conditions: tp < 300 μs VGS = - 4.0 V Source-Drain Current, ISD (A) 700 Ciss 10.00 500 Capacitance (nF) 600 175 °C 150 °C 125 °C 100 °C 400 300 Coss 1.00 Crss 0.10 200 25 °C -40 °C 100 0 0.01 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 50 Figure 7. 3rd Quadrant Characteristic vs. Junction Temperature, VGS = - 4 V (Body Diode) 100.00 4.0 Gate Threshold Voltage, VGS th (V) Capacitance (nF) 10.00 Coss 1.00 0.10 Crss 0.01 0 200 400 600 800 1,000 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1,200 -50 0 Switching Energy (mJ) 18 16 14 EOff 12 EOn 6 4 ERR 0 100 200 300 400 500 600 700 Drain-Source Current, IDS (A) Figure 11. Switching Energy vs. Drain Current (VDS = 600 V) 200 25 20 EOn + EOff 15 10 EOn 5 2 5 Conditions: TVJ = 25 °C VDS = 800 V RG ext = 0.0 Ω VGS = -4/+15 V L = 13.6 µH 30 8 150 35 EOn + EOff 10 100 Figure 10. Threshold Voltage vs. Junction Temperature Switching Energy (mJ) 20 50 Junction Temperature, TJ (°C) Figure 9. Typical Capacitances vs. Drain to Source Voltage (0 - 1200 V) Conditions: TVJ = 25 °C VDS = 600 V RG(ext) = 0.0 Ω VGS = -4/+15 V L = 13.6 µH 200 Conditions: VGS = VDS IDS = 115 mA 3.5 Drain-Source Voltage, VDS (V) 22 150 Figure 8. Typical Capacitances vs. Drain to Source Voltage (0 - 200 V) Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz Ciss 100 Drain-Source Voltage, VDS (V) Source-Drain Voltage, VSD (V) 0 Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz 800 900 EOff ERR 0 0 100 200 300 400 500 600 700 Drain-Source Current, IDS (A) Figure 12. Switching Energy vs. Drain Current (VDS = 800 V) Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 800 900 Typical Performance 12.5 Switching Energy (mJ) 1.5 Conditions: IDS = 425 A, VDS = 600 V RG ext = 0.0 Ω, VGS = -4/+15 V L = 13.6 µH EOn+EOff 10.0 7.5 EOn EOff 5.0 2.5 0.0 0 25 50 75 100 125 150 175 Reverse Recovery Energy, ERR (mJ) 15.0 200 Conditions: IDS = 425 A, RG ext = 0.0 Ω, VGS = -4/+15 V L = 13.6 µH 1.3 1.0 ERR (VDS = 800 V) ERR (VDS = 600 V) 0.8 0.5 0.3 0.0 0 50 25 Figure 13. MOSFET Switching Energy vs. Junction Temperature Conditions: IDS = 425 A, VDS =600 V TVJ = 25 °C, VGS = -4/+15 V L = 13.6 µH Switching Energy (mJ) 50 0.5 EOn + EOff 40 EOn 30 EOff 20 10 0 ERR 0 2 4 6 8 10 12 External Gate Resistor, RG ext (Ω) 125 150 175 0.4 0.3 0.2 ERR (VDS = 600 V) 0.1 0.0 0 2 4 6 8 10 External Gate Resistor, RG ext (Ω) 12 1.0E+00 1000.00 1.0E-01 1.0E-02 1.0E-03 200 Conditions: IDS = 425 A, TVJ = 25°C, VGS = -4/+15 V L = 13.6 µH Figure 16. Reserve Recovery Energy vs. External Gate Resistance D = 0.5 D = 0.3 Drain-Source Current, IDS (A) Transient Thermal Impedance Junction to Case, ZTH JC (°C/W) Figure 15. MOSFET Switching Energy vs. External Gate Resistance D = 0.1 D = 0.05 D = 0.02 D = 0.01 1.0E-04 Single Pulse 1.0E-05 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 Time, tp (s) Figure 17. MOSFET Junction to Case Transient Thermal Impedance, ZTH JC (°C/W) 6 100 Figure 14. Reverse Recovery Energy vs. Junction Temperature Reverse Recovery Energy, ERR (mJ) 60 75 Junction Temperature, TVJ (°C) Junction Temperature, TVJ (°C) 10 μs Limited by RDS(on) 100.00 100 μs 1 ms 100 ms 10.00 1.00 Conditions: TC = 25 °C D=0 Parameter: tp 0.10 0.01 0.1 1 10 100 Drain-Source Voltage, VDS (V) Figure 18. Forward-Bias Safe Operating Area (FBSOA) Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 1000 Typical Performance 900 Drain-Source Current, IDS (A) 800 Drain-Source DC Current, IDS (DC) (A) 500 Chip Module, RG ext = 0.0 Ω Module, RG ext = 3.0 Ω 700 600 500 400 300 Conditions: TVJ = 175 °C LS Total = 10.2 nH (LS Cap + Busbar = 3.5 nH + LS Module = 6.7 nH) 200 100 0 0 200 400 600 800 450 400 350 300 250 200 150 100 50 0 1000 1200 Drain-Source Voltage, VDS (V) -50 800 600 400 200 -50 0 50 100 150 Conditions: VDS = 800 V TC = 90 °C TJ = 175 °C RG(ext) = 0.0 Ω MF = 1 400 350 300 250 200 150 100 200 0 0 20 40 60 Typical NTC Temperature (°C) 175 150 125 100 75 50 A = 3.3540E-03, B = 3.0014E-04, C = 5.0852E-06 and D = 2.1877 E-07 R25 = 4700 Ohms 50 500 100 Figure 22. Typical Output Current Capability vs. Switching Frequency (Inverter Application) 200 25 80 Switching Frequency, FS (kHz) Figure 21. Maximum Power Dissipation Derating vs. Case Temperature 5000 Typical NTC Resistance Value (Ohms) Figure 23. Typical NTC Resistance vs. Temperature 7 200 50 Case Temperature, TC (°C) 0 150 450 Output Current, IOut (Arms) FET Power Dissipation, PD (W) 100 500 1000 0 50 Figure 20. Continuous Drain Current Derating vs. Case Temperature Conditions: TVJ ≤ 175 °C 1200 0 Case Temperature, TC (°C) Figure 19. Reverse-Bias Safe Operating Area (RBSOA) 1400 Conditions: TVJ ≤ 175 °C Wirebond Limit Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 5 6 4 3 5 2 4 3 Schematic and Pin Out D 53.00 2 44.75 ±0.20 1 D 15.75 ±0.30 ±0.20 4.50 ±0.20 1 12.50 ±0.30 D 3 31.00 ±0.40 5.50 ±0.40 8 4 4 9 5 5 C C 2 10 31.00 ±0.40 1.50 ±0.20 1 24.00 ±0.20 71.75 ±0.20 24.00 ±0.20 12.50 ±0.20 8,9 13.50 ±0.30 80.00 ±0.20 13.50 ±0.30 3 6 NTC 6 10 7 11 C 7 1 11 2 B 29.50 ±0.20 B Package Dimension 6 (mm) 44.00 ±0.30 5 4 2.54 3 2 3.00 ±0.20 D 53.00 ±0.20 15.75 ±0.30 44.75 ±0.20 12.50 ±0.30 Title A 13.50 ±0.30 12.00 ±0.30 4.50 ±0.20 0.64 2.54 B A 0.64 mm SIZE C 5 71.75 ±0.20 6 X° ± 0.5° 80.00 ±0.20 UNLESS OTHERWISE SPECIFIED 3 2 CREE CONFIDENTIAL This plot and the information contained within are the proprietary and confidential information of Cree, Inc. This plot may not be copied, reproduced, or disclosed to any unauthorized person without the written consent of Cree, Inc. .XX ± 0.25 TOLERANCE .XXX ± 0.125 VED 4 THIRD ANGLE PROJECTION NOT TO SCALE 4 31.00 ±0.40 DIMENSIONS PART # 13.50 ±0.30 SHEET 1 OF 2 APM-011-000 3 C A of 1 DATASHEET 1 DRAWING REV 1 Wolfspeed, A Cree Company Cree Fayetteville 535 W. Research Center Blvd. Fayetteville, AR 72701 2 4 5 1 31.00 ±0.40 2/7/2019 1 5.50 ±0.40 BMC Sheet 1.50 ±0.20 5 6 7 29.50 ±0.20 44.00 ±0.30 2.54 0.64 12.00 ±0.30 2.54 B 3.00 ±0.20 BY Wednesday, May 15, 2019 24.00 ±0.20 Date: Rev 24.00 ±0.20 12.50 ±0.20 Size Document Number Custom 0.64 A DATASHEET DRAWING 8 Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 CREE CONFIDENTIAL SIZE DRAWN BY BMC 2/7/2019 DIMENSIONS mm Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subjectC to change without notice. the Cree logo, Wolfspeed®, logo This plot andCree®, the information contained withinand arethe theWolfspeed proprietary and are registered trademarks of Cree, Inc. .XX ± 0.25 confidential information of Cree, Inc. This plot may not be copied, CHECK TOLERANCE .XXX ± 0.125 reproduced, or disclosed to any unauthorized person without the written UNLESS OTHERWISE SPECIFIED THIRD ANGLE PROJECTION consent of Cree, Inc. APPROVED NOT TO SCALE X° ± 0.5° PART # APM-011-000 Package Dimension (mm)2 1 E E Power Terminal Screw Maximum Penetration Depth B 5.50 B F Maximum Penetration Depth [mm] DETAIL F SECTION E-E SCALE 4 : 1 Supporting Links & Tools UNLESS OTHERWISE SPECIFIED: NAME DATE • A CGD12HBXMP: XM3 Evaluation Gate Driver TITLE: • CGD12HB00D: Differential Transceiver Board for CGD12HBXMP • CRD250DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30) • KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31) SIZE DWG. NO. REV • CPWR-AN28: Module Mounting Application Note A • CPWR-AN29: Thermal Interface Material Application Note DIMENSIONS ARE IN INCHES TOLERANCES: FRACTIONAL ANGULAR: MACH BEND TWO PLACE DECIMAL THREE PLACE DECIMAL INTERPRET GEOMETRIC TOLERANCING PER: PROPRIETARY AND CONFIDENTIAL THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF . ANY REPRODUCTION IN PART OR AS A WHOLE WITHOUT THE WRITTEN PERMISSION OF IS PROHIBITED. MATERIAL USED ON NEXT ASSY APPLICATION 2 DRAWN CHECKED A ENG APPR. MFG APPR. Q.A. COMMENTS: FINISH DO NOT SCALE DRAWING SCALE: 1:1 WEIGHT: SHEET 1 OF 1 1 Notes • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. 9 Rev. -, 2020-01-28 CAB425M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc.