CAB016M12FM3

CAB016M12FM3 1200 V, 16 mΩ All-Silicon Carbide Half-Bridge Module Technical Features • • • • VDS 1200 V RDS(on) 16 mΩ Package Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications • • • • • EV Chargers Solar High-Efficiency Converters / Inverters Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency due to Low Switching & Conduction Losses of SiC • Reduced Thermal Requirements and System Cost Maximum Parameters (Verified by Design) Symbol Parameter VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value VGS op ID ISD BD Gate-Source Voltage, Recommended Op. Value DC Continuous Drain Current (TVJ ≤ 150 ˚C) DC Continuous Drain Current (TVJ ≤ 175 ˚C) Min. -8 +19 -4 +15 78 82 49 DC Source-Drain Current (Body Diode) 1 Maximum Virtual Junction Temperature under Switching Conditions Max. Unit Test Conditions Note 1200 ID (pulsed) Maximum Pulsed Drain Current TVJ op Typ. V Transient,