TSM8588CS RLG

TSM8588CS Taiwan Semiconductor Complementary N & P-Channel Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER TYPE VALUE VDS Q1 Q2 60 -60 103 122 180 220 4.4 4.6 RDS(on) (max) APPLICATIONS ● Building technologies VGS = 10V VGS = 4.5V VGS = -10V VGS = -4.5V Q1 Q2 Q1 Q2 Qg ● DC Fan UNIT V mΩ nC ● Motor drives SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Q1 Q2 UNIT Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation 5 -4 2.5 -2 IDM 20 -16 A IAS EAS 6.8 6.9 -7 7.4 A mJ 5.7 5.7 1.1 1.1 1.4 1.4 0.3 0.3 ID TA = 25°C TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD A W W TJ, TSTG - 55 to +150 °C SYMBOL MAXIMUM UNIT Thermal Resistance – Junction to Case RӨJC 22 Thermal Resistance – Junction to Ambient RӨJA 88 THERMAL PERFORMANCE PARAMETER °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is 2 determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: A1811 TSM8588CS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS Drain-Source VGS = 0V, ID = 250µA Breakdown Voltage VGS = 0V, ID = -250µA Gate Threshold Voltage SYMBOL BVDSS VGS = VDS, ID = 250µA VGS(TH) VGS = VDS, ID = -250µA Gate-Source Leakage VGS = ±20V, VDS = 0V Current VGS = ±20V, VDS = 0V Drain-Source Leakage VGS = 0V, VDS = 60V Current VGS = 0V, VDS = -60V IGSS IDSS VGS = 10V, ID = 2.5A Drain-Source On-State Resistance (Note 3) Dynamic MAX Q1 60 -- -- Q2 -60 -- -- Q1 1.2 1.8 2.5 Q2 -1 -1.5 -2.5 Q1 -- -- ±100 nA Q2 -- -- ±100 nA Q1 -- -- 1 Q2 -- -- -1 -- 74 103 -- 86 122 -- 135 180 -- 170 220 Q1 -- 10 -- Q2 -- 5 -- Q1 -- 9.4 -- Q2 9 Q1 --- 4.4 --- Q2 -- 4.6 -- Q1 -- 1.8 -- Q2 -- 1.2 -- Q1 -- 2.3 -- Q2 -- 2.4 -- Q1 -- 527 -- Q2 -- 436 -- Q1 -- 31 -- Q2 -- 32 -- Q1 -- 4 -- Q2 -- 11 -- Q1 0.5 1.8 3.6 Q2 5 17 34 Q1 Q2 --- 5 3.4 --- Q1 -- -- Q2 -- 21 21 Q1 -- 10 -- Q2 -- 21 -- Q1 -- 17 -- Q2 -- 26 -- Q2 VDS = 10V, ID = 2.5A Transconductance TYP RDS(on) VGS = -4.5V, ID = -1.7A (Note 3) MIN Q1 VGS = 4.5V, ID = 2.3A VGS = -10V, ID = -2A Forward TYPE gfs VDS = -10V, ID = -2A UNIT V V µA mΩ S (Note 4) Total Gate Charge Total Gate Charge Gate-Source Charge Qg(VGS=10V) Q1 VDS = 30V, ID = 2.5A Qg(VGS=4.5V) Q2 Qgs VDS = -30V, ID = -2A Gate-Drain Charge Input Capacitance Output Capacitance Qgd Q1 VGS = 0V, VDS = 30V f = 1.0MHz VGS = 0V, VDS = -30V Capacitance f = 1.0MHz Switching Coss Q2 Reverse Transfer Gate Resistance Ciss Crss f = 1.0MHz Rg nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) Q1 VGS = 10V, VDS = 30V, tr ID = 2.5A, RG = 2Ω Q2 td(off) VGS = -10V, VDS = -30V, ID = -2A, RG = 2Ω tf 2 -- ns Version: A1811 TSM8588CS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX Q1 -- -- 1 Q2 -- Q1 --- 14 -1 -- Q2 -- 11 -- Q1 -- 10 -- Q2 -- 6 -- UNIT Source-Drain Diode Forward Voltage (Note 3) Reverse Recovery Time VGS = 0V, IS = 2.5A VSD VGS = 0V, IS = -2A Q1 trr IS = 2.5A, dI/dt = 100A/μs Reverse Recovery Q2 Charge IS = -2A, dI/dt = 100A/μs Qrr V ns nC Notes: 1. Current limited by package. 2. Q1 : L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 6.8A, Starting TJ = 25°C Q2 : L = 0.3mH, VGS = -10V, VDD = -30V, RG = 25Ω, IAS = -7A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE TSM8588CS RLG PACKAGE PACKING SOP-8 2,500pcs / 13” Reel 3 Version: A1811 TSM8588CS Taiwan Semiconductor CHARACTERISTICS CURVES (Q1 N-Channel) (TA = 25°C unless otherwise noted) Output Characteristics VGS=10V VGS=7V VGS=5V VGS=4.5V ID, Drain Current (A) 12 Transfer Characteristics 10 VGS=4V ID, Drain Current (A) 15 VGS=3.5V 9 6 VGS=3V 3 8 6 25℃ 4 150℃ 0 0 0 1 2 3 0 4 On-Resistance vs. Drain Current 2 3 4 Gate-Source Voltage vs. Gate Charge 10 0.3 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.25 0.2 0.15 VGS=4.5V 0.1 VGS=10V 0.05 0 0 3 6 9 12 VDS=30V ID=2.5A 8 6 4 2 0 15 0 2 2.4 VGS=10V ID=2.5A 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 6 8 10 On-Resistance vs. Gate-Source Voltage 100 125 150 RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.2 4 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 2 0.3 0.25 0.2 0.15 ID=2.5A 0.1 0.05 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1811 TSM8588CS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 600 BVDSS (Normalized) Drain-Source Breakdown Voltage 700 CISS 500 400 300 200 CRSS 100 COSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 10 20 30 40 50 60 -75 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 100 RDS(ON) ID, Drain Current (A) -50 10 1 0.1 SINGLE PULSE RӨJC=22°C/W TC=25°C 10 150℃ 25℃ -55℃ 1 0.1 0.01 0.1 1 10 0.2 100 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=22°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 t, Square Wave Pulse Duration (sec) 5 Version: A1811 TSM8588CS Taiwan Semiconductor CHARACTERISTICS CURVES (Q2 P-Channel) (TA = 25°C unless otherwise noted) Output Characteristics VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V 9 Transfer Characteristics 10 -ID, Drain Current (A) -ID, Drain Current (A) 12 VGS=-4V 6 VGS=-3.5V 3 VGS=-3V 8 6 4 25℃ 2 150℃ 0 0 1 2 3 4 0 1 2 3 4 -VGS, Gate to Source Voltage (V) On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge 10 0.4 -VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) -VDS, Drain to Source Voltage (V) 0.35 0.3 0.25 VGS=-4.5V 0.2 0.15 VGS=-10V 0.1 0.05 0 VDS=-30V ID=-2A 8 6 4 2 0 0 3 6 9 12 0 2 VGS=-10V ID=-2A 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 6 8 10 On-Resistance vs. Gate-Source Voltage 2 100 125 150 RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 1.8 4 Qg, Gate Charge (nC) -ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0 0.35 0.3 0.25 0.2 ID=-2A 0.15 0.1 0.05 0 3 4 5 6 7 8 9 10 -VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 6 Version: A1811 TSM8588CS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage 600 C, Capacitance (pF) 500 CISS 400 300 200 CRSS 100 COSS 1.2 ID=-1mA 1.1 1 0.9 0.8 0 0 10 20 30 40 50 -75 60 -50 Maximum Safe Operating Area, Junction-to-Case 0 25 50 75 100 125 150 Source-Drain Diode Forward Current vs. Voltage 100 -IS, Reverse Drain Current (A) 100 RDS(ON) -ID, Drain Current (A) -25 TJ, Junction Temperature (°C) -VDS, Drain to Source Voltage (V) 10 1 0.1 SINGLE PULSE RӨJC=22°C/W TC=25°C 10 150℃ 1 25℃ -55℃ 0.1 0.01 0.1 1 10 0.2 100 0.4 0.6 0.8 1 1.2 -VSD, Body Diode Forward Voltage (V) -VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=22°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 t, Square Wave Pulse Duration (sec) 7 Version: A1811 TSM8588CS Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOP-8 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSM8588 YWWLF Y WW L F = Year Code = Week Code (01~52) = Lot Code (1~9,A~Z) = Factory Code 8 Version: A1811 TSM8588CS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9 Version: A1811