CCB032M12FM3

CCB032M12FM3 1200 V, 32 mΩ All-Silicon Carbide Six-Pack Module Technical Features • • • • VDS 1200 V RDS(on) 32 mΩ Package Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications • • • • • EV Chargers Solar High-Efficiency Converters / Inverters Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency due to Low Switching & Conduction Losses of SiC • Reduced Thermal Requirements and System Cost Maximum Parameters (Verified by Design) Symbol Parameter VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value VGS op ID ISD BD Gate-Source Voltage, Recommended Op. Value DC Continuous Drain Current (TVJ ≤ 150 ˚C) DC Continuous Drain Current (TVJ ≤ 175 ˚C) Min. Typ. -8 +19 -4 +15 40 42 24 DC Source-Drain Current (Body Diode) Maximum Virtual Junction Temperature under Switching Conditions Unit Test Conditions V Transient,