CAS120M12BM2

CAS120M12BM2 1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features • • • • • • VDS 1200 V IDS 120 A Package 61.4 mm X 106.4 mm X 30 mm Industry Standard 62mm Footprint Ultra-Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator Applications • • • • Railway & Traction Solar & Renewable Energy EV Charging Industrial Automation & Testing System Benefits • Fast Time-to-Market with Minimal Development Required for Transition from 62mm IGBT Packages • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Maximum Parameters (Verified by Design) Symbol Parameter VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -10 +25 VGS op Gate-Source Voltage, Recommended Op. Value -5 +20 IDS DC Continuous Drain-Source Current ISD DC Continuous Source-Drain Current 460 IF Schottky Diode DC Forward Current 312 Typ. Max. Unit Test Conditions V Transient,