TQM150NB04DCR RLG

TQM150NB04DCR Taiwan Semiconductor AUTOMOTIVE Dual N-Channel 40V 175°C MOSFET FEATURES PRODUCT SUMMARY ● AEC-Q101 Rev-D Qualified PARAMETER VALUE UNIT VDS 40 V ● 100% UIS and Rg tested ● 175°C Operating Junction Temperature ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 RDS(on) (max) VGS = 10V 15 VGS = 7V 28.6 mΩ Qg APPLICATIONS 18 nC ● Power Switch for 12V Automotive Systems ● Solenoid and Motor Control ● Automotive Transmission Control ● DC-DC Converters PDFN56U Dual Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) TA = 25°C Pulsed Drain Current ID 39 A 9 IDM 156 A Single Pulse Avalanche Current (Note 2) IAS 15 A Single Pulse Avalanche Energy (Note 2) EAS 34 mJ Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD 48 W 16 2.4 W 0.8 TJ, TSTG - 55 to +175 °C SYMBOL MAXIMUM UNIT Thermal Resistance – Junction to Case RӨJC 3.1 °C/W Thermal Resistance – Junction to Ambient RӨJA 61 °C/W THERMAL RESISTANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is 2 determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: A1912 TQM150NB04DCR Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.8 2.8 4 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- -- 500 -- 10.3 15 -- 17.5 25.5 -- 21.6 31.5 -- 11.6 28.6 gfs -- 38 -- Qg -- 18 -- Qg -- 13 -- Qgs -- 6 -- Qgd -- 4 -- Ciss -- 1135 -- Coss -- 112 -- Crss -- 52 -- Rg 0.8 2.5 5 td(on) -- 7 -- tr -- 8 -- td(off) -- 13 -- tf -- 4 -- VSD -- -- 1.2 V VGS = 0V, VDS = 40V VGS = 0V, VDS = 40V Drain-Source Leakage Current IDSS TJ = 125°C VGS = 0V, VDS = 40V TJ = 175°C VGS = 10V, ID = 9A VGS = 10V, ID = 9A Drain-Source On-State Resistance TJ = 125°C (Note 3) VGS = 10V, ID = 9A VGS = 7V, ID = 6A Forward Transconductance Dynamic (Note 3) mΩ RDS(on) TJ = 175°C VDS = 10V, ID = 9A µA S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 9A Total Gate Charge VGS = 7V, VDS = 20V, Gate-Source Charge ID = 6A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 9A, RG = 2Ω Fall Time ns Source-Drain Diode Diode Forward Voltage (Note 3) VGS = 0V, IS = 9A Reverse Recovery Time IS = 9A, trr -- 14 -- ns Reverse Recovery Charge di/dt = 100A/μs Qrr -- 7 -- nC Notes: 1. Silicon limited current only. 2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 50Ω, IAS = 15A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. 2 Version: A1912 TQM150NB04DCR Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE TQM150NB04DCR RLG PACKAGE PACKING PDFN56U Dual 2,500pcs / 13” Reel 3 Version: A1912 TQM150NB04DCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=10V VGS=7V VGS=6V VGS=5.5V VGS=5V 30 ID, Drain Current (A) ID, Drain Current (A) 40 20 VGS=4.5V 10 30 20 25℃ -55℃ 10 175℃ 0 0 0 1 2 3 0 4 On-Resistance vs. Drain Current 4 5 Gate-Source Voltage vs. Gate Charge VGS, Gate to Source Voltage (V) 0.016 0.014 VGS=7V 0.012 0.01 VGS=10V 0.008 0.006 0.004 0 10 20 30 VDS=20V ID=9A 8 6 4 2 0 40 0 5 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=9A 1.5 1 0.5 0 0 25 50 15 20 On-Resistance vs. Gate-Source Voltage 2.5 -75 -50 -25 10 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 3 10 0.018 2 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 75 100 125 150 175 0.04 0.035 0.03 0.025 0.02 0.015 ID=9A 0.01 0.005 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1912 TQM150NB04DCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 1600 1400 1200 CISS 1000 800 600 400 200 0 COSS CRSS 0 10 20 30 1.2 ID=2mA 1.1 1 0.9 0.8 40 -75 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 ID, Drain Current (A) -50 RDS(ON) 100 10 SINGLE PULSE RӨJC=3.1°C/W TC=25°C 10 175℃ 1 25℃ -55℃ 0.1 1 0.1 1 10 0 100 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=3.1°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A1912 TQM150NB04DCR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56U Dual SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 150NB04D YWWLF Y WW L F _ = Year Code = Week Code (01~52) = Lot Code (1~9,A~Z) = Factory Code = AEC-Q101 Qualified 6 Version: A1912 TQM150NB04DCR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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