TSM300NB06DCR
Taiwan Semiconductor
Dual N-Channel Power MOSFET
60V, 25A, 30mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
PARAMETER
VALUE
UNIT
VDS
60
V
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
RDS(on) (max)
VGS = 10V
30
VGS = 7V
42.3
mΩ
Qg
APPLICATIONS
17
nC
● BLDC Motor Control
● Battery Power Management
● DC-DC Converter
● Secondary Synchronous Rectification
PDFN56 Dual
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C
(Note 1)
ID
TA = 25°C
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
Total Power Dissipation
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
25
6
A
IDM
100
A
IAS
EAS
12
22
A
mJ
PD
PD
40
8
2
0.4
W
W
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
MAXIMUM
UNIT
Junction to Case Thermal Resistance
RӨJC
3.1
°C/W
Junction to Ambient Thermal Resistance
RӨJA
61
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is
2
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper.
1
Version: A1908
TSM300NB06DCR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
2.5
3.2
4.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
1
--
--
100
--
25
30
--
29
42.3
gfs
--
24
--
Qg
--
17
--
Qg
--
12
--
Qgs
--
6
--
Qgd
--
4
--
Ciss
--
1079
--
Coss
--
68
--
Crss
--
16
--
Rg
0.7
2.4
4.8
td(on)
--
6
--
tr
--
3
--
td(off)
--
12
--
tf
--
2
--
VSD
--
--
1.2
V
VGS = 0V, VDS = 60V
Drain-Source Leakage Current
IDSS
VGS = 0V, VDS = 60V
TJ = 125°C
Drain-Source On-State Resistance
VGS = 10V, ID = 6A
(Note 3)
VGS = 7V, ID = 5A
Forward Transconductance
Dynamic
(Note 3)
RDS(on)
VDS = 10V, ID = 6A
µA
mΩ
S
(Note 4)
VGS = 10V, VDS = 30V,
Total Gate Charge
ID = 6A
Total Gate Charge
VGS = 7V, VDS = 30V,
Gate-Source Charge
ID = 5A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = 30V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 4)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 30V,
Turn-Off Delay Time
ID = 6A, RG = 2Ω
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 3)
VGS = 0V, IS = 6A
Reverse Recovery Time
IS = 6A,
trr
--
17
--
ns
Reverse Recovery Charge
dI/dt = 100A/μs
Qrr
--
13
--
nC
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 12A, Starting TJ = 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
TSM300NB06DCR RLG
PDFN56 Dual
2,500pcs / 13” Reel
2
Version: A1908
TSM300NB06DCR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Transfer Characteristics
30
25
25
ID, Drain Current (A)
ID, Drain Current (A)
Output Characteristics
30
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5.5V
20
15
10
VGS=5V
5
20
15
25℃
10
-55℃
5
150℃
0
0
0
1
2
3
4
0
On-Resistance vs. Drain Current
3
4
5
6
Gate-Source Voltage vs. Gate Charge
0.05
10
VGS, Gate to Source Voltage (V)
RDS(ON), Drain-Source On-Resistance (Ω)
2
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
0.045
0.04
0.035
VGS=7V
0.03
0.025
VGS=10V
0.02
0.015
0.01
VDS=30V
ID=6A
8
6
4
2
0
0
10
20
30
0
2.5
VGS=10V
ID=6A
1.5
1
0.5
0
-75
-50
-25
0
25
50
75
10
15
20
100 125 150
On-Resistance vs. Gate-Source Voltage
RDS(on), Drain-Source On-Resistance (Ω)
On-Resistance vs. Junction Temperature
2
5
Qg, Gate Charge (nC)
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
1
TJ, Junction Temperature (°C)
0.06
0.055
0.05
0.045
0.04
0.035
ID=6A
0.03
0.025
0.02
0.015
0.01
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
3
Version: A1908
TSM300NB06DCR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
1200
BVDSS (Normalized)
Drain-Source Breakdown Voltage
C, Capacitance (pF)
1400
CISS
1000
800
600
400
CRSS
200
COSS
1.2
ID=1mA
1.1
1
0.9
0.8
0
0
10
20
30
40
50
-75
60
Maximum Safe Operating Area, Junction-to-Case
-25
0
25
50
75
100 125 150
Source-Drain Diode Forward Current vs. Voltage
100
IS, Reverse Drain Current (A)
1000
ID, Drain Current (A)
-50
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
100
RDS(ON)
10
1
SINGLE PULSE
RӨJC=3.1°C/W
TC=25°C
0.1
10
150℃
25℃
-55℃
1
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=3.1°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.1
t, Square Wave Pulse Duration (sec)
4
Version: A1908
TSM300NB06DCR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56 Dual
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
TSC
300NB06D
YWWLF
Y
WW
L
F
= Year Code
= Week Code (01~52)
= Lot Code (1~9,A~Z)
= Factory Code
5
Version: A1908
TSM300NB06DCR
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: A1908