C3D02060F

C3D02060F VRRM = Silicon Carbide Schottky Diode IF (TC=150˚C) = Z-Rec Rectifier (Full-Pak) ® Q c Features • • • • • • • • = 600 V 2A 5.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Forward and Reverse Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Fully Isolated Case TO-220-F2 Benefits • • • • • PIN 1 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements No Additional Isolation Required PIN 2 Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D02060F TO-220-F2 C3D02060 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V Continuous Forward Current 6 3 2 A TC=25˚C TC=125˚C TC=150˚C IFRM Repetitive Peak Forward Surge Current 9 6 A TC=25˚C, tP=10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 15.5 13.5 A TC=25˚C, tP=10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave Fig. 8 IFSM(Max) Non-Repetitive Peak Forward Surge Current 120 110 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation 22.7 9.8 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V ∫i2dt i2t value 1.2 0.9 A2s -55 to +175 ˚C 1 8.8 Nm lbf-in IF TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C3D02060F Rev. G, 02-2019 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 1.8 1.7 2.4 V IF = 2 A TJ=25°C IF = 2 A TJ=175°C Fig.1 IR Reverse Current 3 6 15 55 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C Fig. 2 QC Total Capacitive Charge 5.8 nC VR = 400 V, IF = 2A di/dt = 500 A/μS TJ = 25°C Fig. 5 C Total Capacitance 175 10.5 8.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 0.8 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter TO-220 Package Thermal Resistance from Junction to Case Typ. Unit Note 6.6 °C/W Fig. 9 Typical Performance 100 6 TJ = -55 °C 5 Reverse Leakage ICurrent, (mA) IRR (uA) 4 TJ = 75 °C TJ = 125 °C 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 TJ = 175 °C 60 TJ = 125 °C TJ = 75 °C R TJ = 175 °C F Foward I Current, (A) IF (A) TJ = 25 °C C3D02060F Rev. G, 02-2019 3.5 4.0 40 TJ = 25 °C TJ = -55 °C 20 0 0 200 400 600 800 (V) VR (V) ReverseVVoltage, R Figure 2. Reverse Characteristics 1000 1200 Typical Performance 25 12 20 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 16 14 10 20 P (W) P (W) PP (W) Tot TOT TOT TOT (A) IIF(peak) (A) IF (A) F(peak) 12 10 8 6 8 15 6 10 4 PTot (W) 18 5 2 4 2 0 25 75 50 100 T ˚C ˚C TTCCC(°C) 125 150 00 175 25 25 150 150 175 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 160 7 140 Capacitance C (pF) (pF) 6 5 4 C CapacitiveQCharge, (nC) QC (nC) TT ˚C T ˚C TCCCC(°C) (°C) 125 125 180 3 120 100 80 60 2 40 1 20 0 0 0 100 200 300 400 500 600 700 (V)VR (V) Reverse V Voltage, R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 100 200 Conditions: TJ = 25 °C 8 75 75 Figure 4. Power Derating Figure 3. Current Derating 9 50 50 C3D02060F Rev. G, 02-2019 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 2 1.8 100 100 100 TJ_initial = 25 °C TJ_initial TJ_initial = 25= 110 °C °C TJ_initial = 110 °C 1.4 IFSM (A) (A) FSM IIFSM (A) 1.2 1 C Capacitance StoredE Energy, (mJ) EC (µJ) 1.6 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 600 ReverseVVoltage, (V) VR (V) R Figure 7. Capacitance Stored Energy 700 1010 10 1E-05 10E-6 10E-6 1E-04 100E-6 1E-03 1E-3 100E-6 1E-3 Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) 0.5 0.5 0.3 0.3 1 1 0.1 0.1 0.05 0.05 0.02 0.02 100E-3 100E-3 0.01 0.01 SinglePulse SinglePulse 10E-3 10E-3 1E-6 1E-6 100E-6 1E-3 1E-310E-3 10E-3 10E-6 100E-6 10E-6 100E-3 100E-3 1 Time, tp (s) TT(Sec) (Sec) Figure 9. Transient Thermal Impedance 4 C3D02060F Rev. G, 02-2019 10E-3 (s) ttpp (s) Time, tp (s) 10 10 1E-02 10E-3 1 10 10010 Package Dimensions Package TO-220-F2 SYMBOL A A1 A2 b b1 b2 b3 C D D1 D2 e E E1 G Ho L L1 M ØP Q Q1 Θ Θ1 Θ2 MIN (mm) 4.30 1.80 2.34 0.40 1.00 0.56 0.24 0.40 14.70 4.83 9.70 6.50 12.10 2.98 3.10 2.70 MAX (mm) 4.93 3.90 2.90 0.91 1.40 0.93 0.55 0.80 16.07 2.50 TYP 2.66 TYP 5.33 10.36 7.00 TYP 7.10 28 TYP 13.50 0.50 2.86 TYP 3.40 3.30 3.50 20° TYP 3° TYP 5° TYP PIN 1 PIN 2 Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D02060F TO-220-F2 C3D02060 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D02060F Rev. G, 02-2019 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D02060F Rev. G, 02-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power