SICR40650WTTB

SICR40650WT Technical Data Data Sheet N1997, Rev.- SICR40650WT 650V SIC POWER SCHOTTKY RECTIFIER Description SICR40650WT is single SiC Schottky rectifiers packaged in TO-247AD case.The device is a high voltage Schottky rectifier pair that has very low total conduction losses and very stable switching characteristics over temperature extremes. The SICR20600WT are ideal for energy sensitive, high frequency applications in challenging environments. TO-247AD Circuit Diagram Features       Applications         Alternative energy inverters Power Factor Correction (PFC) Free-Wheeling diodes Switching supply output rectification Reverse polarity protection 175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability Guard ring for enhanced ruggedness and long term reliability Pb − Free Device All SMC parts are traceable to the wafer lot Additional electrical and life testing can be performed upon request Maximum Ratings: Characteristics Symbol Condition Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - Average Rectified Forward Current IF (AV) Peak One Cycle Non-Repetitive Surge Current (Per Leg) 50% duty cycle @Tc=147°C, rectangular wave form IFSM 10ms, Half Sine pulse, TC = 25 C Max. Units 650 V 20(Per Leg) 40(Per Device) A 70 A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR40650WT Technical Data Data Sheet N1997, Rev.- Electrical Characteristics: Characteristics Forward Voltage Drop(Per Leg)* Reverse Current at DC condition(Per Leg)* Symbol VF1 VF2 IR1 IR2 Total Capacitive charge(Per Leg) Junction Capacitance(Per Leg) Voltage Rate of Change * Pulse width < 300 µs, duty cycle < 2% QC CT Condition Typ. Max. Units @ 20A, Pulse, TJ = 25 C 1.5 2.0 V @ 20A, Pulse, TJ = 175 C @VR = rated VR TJ = 25 C @VR = rated VR TJ = 175 C Vr = 400 V, IF = 10A dIF/dt = -200 A/μs, Tj = 25 °C 1.9 2.2 V 50 300 A 300 2000 A 19 - nC 650 - pF - 10,000 V/s @VR = 0V, TC = 25 C, fSIG = 1MHz dv/dt - Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Approximate Weight Case Style Tube Specification Symbol Condition Specification Units TJ Tstg RJC - -55 to +175 -55 to +175 C C 0.84 C/W 6.28 g wt DC operation - TO-247AD Marking Diagram Where XXXXX is YYWWL SICR 40 650 WT SSG YY WW L = Device Type = Forward Current (40A) = Reverse Voltage (650V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR40650WT Technical Data Data Sheet N1997, Rev.- Mechanical Dimensions TO-247AD SYMBOL A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P P1 P2 Q S T U Millimeters MIN. 4.80 2.20 1.90 1.10 1.80 2.80 0.50 20.30 15.45 19.42 3.50 7.1 6.05 TYP. 5.00 2.41 2.00 1.20 2.00 3.00 0.60 21.00 16.55 1.20 15.80 13.30 5.00 2.50 5.44 19.92 4.13 3.60 MAX. 5.20 2.61 2.10 1.40 2.20 3.20 0.75 21.20 16.00 20.70 2.50 5.80 6.15 10.00 6.20 Ordering Information Device SICR40650WT Package TO-247AD Plating Pure Sn Weight 6.28g Shipping 25pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  3.70 7.40 6.25 Technical Data Data Sheet N1997, Rev.- SICR40650WT DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 