MBR10100CTC0

MBR1035CT - MBR10200CT Taiwan Semiconductor CREAT BY ART 10A, 35V - 200V Dual Common Cathode Schottky Rectifiers FEATURES - Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: TO-220AB TO-220AB Molding compound, UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR MBR 1035 1045 1050 1060 1090 10100 10150 10200 CT CT CT CT CT CT CT CT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25°C IF= 5 A, TJ=125°C IF= 10 A, TJ=25°C IF= 10 A, TJ=125°C Maximum reverse current @ rated VR TJ=25°C TJ=125°C VF IR 1 0.5 A 0.70 0.80 0.85 0.88 0.57 0.65 0.75 0.78 0.80 0.90 0.95 0.98 0.67 0.75 0.85 0.88 2 5 0.1 15 10 V mA Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 1.5 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Version: N1512 MBR1035CT - MBR10200CT Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING CODE SUFFIX MBR10xxCT (Note 1) H PACKING CODE SUFFIX C0 (*) PACKAGE PACKING TO-220AB 50 / Tube G Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT) *: Optional available EXAMPLE EXAMPLE PART NO. MBR1060CTHC0G PART NO. PART NO. SUFFIX MBR1060CT PACKING CODE PACKING CODE H DESCRIPTION SUFFIX C0 AEC-Q101 qualified Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD A CURRENT (A) 12 10 8 6 4 Resistive or inductive load with heat sink 2 0 0 50 100 150 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 180 150 8.3ms single half sine wave 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (°C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 1000 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse width=300μs 1% duty cycle 100 MBR1050CT-1060CT 10 MBR1035CT-1045CT MBR1090CT-10100CT 1 MBR10150-10200CT 0.1 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) 1.2 1.4 10 TJ=125°C 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: N1512 MBR1035CT - MBR10200CT Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (°C/W) JUNCTION CAPACITANCE (pF) A 10000 1000 10 1 0.1 100 0.1 1 10 0.01 100 0.1 1 10 100 T-PULSE DURATION. (s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS TO-220AB DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Version: N1512 MBR1035CT - MBR10200CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: N1512