C4D15120D

C4D15120D VRRM Silicon Carbide Schottky Diode 1200 V IF (TC=135˚C)  =     24 A** Z-Rec Rectifier ® Qc = 74 nC** Features • • • • • = Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C4D15120D TO-247-3 C4D15120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V 24.5/49 12/24 7.5/15 A TC=25˚C TC=135˚C TC=157˚C 38* 25* A TC=25˚C, tP=10 ms, Half Sine Pulse TC-110˚C, tP=10 ms, Half Sine Pulse Continuous Forward Current (Per Leg/Device) Note Fig. 3 IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current 66* 49.5* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 600* 480* A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation(Per Leg/Device) 135/270 58.5/117 W TC=25˚C TC=110˚C Fig. 4 200 V/ns VR=0-960V 20.5* 12.25* A2s -55 to +175 ˚C 1 8.8 Nm lbf-in dV/dt ∫i2dt TJ, Tstg Diode dV/dt ruggedness i2t value Operating Junction and Storage Temperature TO-247 Mounting Torque 1 Test Conditions VRRM IF * Value Per Leg, ** Per Device C4D15120D Rev. D, 12-2017 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 8 A TJ=25°C IF = 8 A TJ=175°C Fig. 1 IR Reverse Current 35 100 250 350 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 37 nC VR = 800 V, IF = 8 A di/dt = 200 A/μs TJ = 25°C Fig. 5 C Total Capacitance 560 37 27 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 10.5 μJ VR = 800 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC * Parameter Typ. Max. 1.11 0.56** * Thermal Resistance from Junction to Case Unit Note °C/W Fig. 9 Per Leg, ** Per Device Typical Performance 14 800 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 12 10 700 600 500 IR (μA) IF (A) 8 6 400 300 4 200 2 100 0 0 0 0.5 1 1.5 2 2.5 VF (V) Figure 1. Forward Characteristics 2 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C C4D15120D Rev. D, 12-2017 3 3.5 4 0 500 1000 1500 VR (V) Figure 2. Reverse Characteristics 2000 Typical Performance (Per Leg) 90 160 80 140 70 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 50 100 PTot (W) IF(peak) (A) 60 120 40 60 30 40 20 20 10 0 80 25 50 75 100 125 150 0 175 25 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 4. Power Derating Figure 3. Current Derating 600 50 45 500 40 35 400 25 C (pF) Qc (nC) 30 20 15 10 300 200 100 5 0 0 0 200 400 600 800 1000 0.1 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D15120D Rev. D, 12-2017 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1000 1000 20.0 20 18.0 18 16.0 16 EC Capacitive Energy (uJ) C 14.0 14 IFSMIFSM (A)(A) E (mJ) 12.0 12 10.0 10 8.08 100 100 TJ = 25°C TJ = 110°C 6.06 4.04 2.02 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Figure 8. Non-repetitive Peak Forward Surge Current vs. Pulse Duration (sinusoidal waveform), per leg Figure 7. Typical Capacitance Stored Energy, per leg 1 Thermal Resistance (˚C/W) 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 SinglePulse 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 t (sec) 10E-3 Figure 9. Device Transient Thermal Impedance 4 C4D15120D Rev. D, 12-2017 100E-3 1 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS A Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 5.10 E2 .145 .201 3.68 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC L .780 .800 L1 .161 .173 N ØP NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout .138 4.10 4.40 3.51 3.65 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5° REF W 3.5° REF X 4° REF Part Number Package Marking C4D15120D TO-247-3 C4D15120 TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering C4D15120D Rev. D, 12-2017 20.32 3 all units are in inches 5 19.81 Diode Model Diode Model CSD04060 Vf T = VT + If*RT = V*T+If*R T -3 VT= 0.965V+fT(T j -1.3*10 ) RT= 0.096 + (Tj * 1.06*10-3) -3 VT = 0.96 + (TJ* -2.1*10 ) RT = 0.06+(TJ* 8.0*10-4) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D15120D Rev. D, 12-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power