MBRS2045CT-Y MNG

MBRS2045CT-Y – MBRS20200CT-Y Taiwan Semiconductor 20A, 45V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 20 A VRRM 45 - 200 V IFSM 150 A TJ MAX 150 °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage MBRS MBRS MBRS MBRS MBRS 2060 20100 20150 20200 UNIT SYMBOL 2045 CT-Y CT-Y CT-Y CT-Y CT-Y MBRS MBRS MBRS MBRS MBRS 2045CT 2060CT 20100CT 20150CT 20200CT VRRM 45 60 100 150 200 V VR(RMS) 31 42 70 105 140 V IF 20 A IFSM 150 A IRRM 1 0.5 A IFRM 20 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: D2103 MBRS2045CT-Y – MBRS20200CT-Y Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 1.5 °C/W RӨJC 2 °C/W MBRS2045CT-Y MBES2060CT-Y MBRS20100CT-Y MBES20150CT-Y MBES20200CT-Y ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRS2045CT-Y MBRS2060CT-Y Forward voltage per (1) diode MBRS20100CT-Y MBRS20150CT-Y MBRS20200CT-Y MBRS2045CT-Y IF = 10A, TJ = 25°C VF MBRS2060CT-Y IF = 10A, TJ = 125°C Reverse current @ (2) rated VR per diode MBRS20100CT-Y MBRS20150CT-Y MBRS20200CT-Y MBRS2045CT-Y MBRS2060CT-Y MBRS20100CT-Y TJ = 25°C MBRS20150CT-Y MBRS20200CT-Y MBRS2045CT-Y IR MBRS2060CT-Y T = 125°C MBRS20100CT-Y J MBRS20150CT-Y MBRS20200CT-Y TYP MAX UNIT - 0.70 V - 0.80 V - 0.85 V - 0.99 V - 0.60 V - 0.70 V - 0.75 V - 0.87 V - 100 µA - 15 mA - 10 mA - 5 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS20xCT-Y PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 45V(MBRS2045CT-Y) to 200V(MBRS20200CT-Y) 2 Version: D2103 MBRS2045CT-Y – MBRS20200CT-Y Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 45CT-Y 60CT-Y - 200CT-Y 20 CAPACITANCE (pF) 15 10 1000 5 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 45CT-Y 60CT-Y - 200CT-Y TJ=125°C 1 TJ=75°C 0.1 TJ=25°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 100 10 10 1 45CT-Y 60CT-Y 100CT-Y - 200CT-Y UF1DLW TJ=125°C TJ=125°C TJ=25°C 0.1 1 TJ=25°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.2 0.3 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.4 0.5 0.5 0.6 0.7 0.8 0.9 0.6 0.7 0.8 0.9 1.0 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 10 (A) AVERAGE FORWARD CURRENT (A) 25 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: D2103 1.2 MBRS2045CT-Y – MBRS20200CT-Y Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: D2103 MBRS2045CT-Y – MBRS20200CT-Y Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: D2103 MBRS2045CT-Y – MBRS20200CT-Y Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: D2103