C3D04060F

C3D04060F VRRM Silicon Carbide Schottky Diode IF (TC=135˚C) = Z-Rec Rectifier (Full-Pak) ® Q c Features • • • • • • • • = Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Fully Isolated Case = 600 V 4A 10 nC TO-220-F2 Benefits • • • • • PIN 1 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • CASE PIN 2 Part Number Package Marking C3D04060F TO-220-F2 C3D04060 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V 9 6 4 A TC=25˚C TC=100˚C TC=135˚C IF Continuous Forward Current Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 15 10.5 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 19 16.5 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IFSM(max) Non-Repetitive Peak Forward Surge Current 220 160 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Power Dissipation 30.9 13.4 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V ∫i2dt i2t value (Per Leg) 1.8 1.3 A2s -55 to +175 ˚C 1 8.8 Nm lbf-in Ptot TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C3D04060F Rev. H, 02-2019 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 1.7 1.7 2.4 V IR Reverse Current 5 10 25 100 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Test Conditions Note IF = 4 A TJ=25°C IF = 4 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 10 nC VR = 400 V, IF = 4 A di/dt = 500 A/μs TJ = 25°C Fig. 5 231 18.5 15 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 1.4 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit Note Thermal Resistance from Junction to Case 4.85 °C/W Fig. 9 Typical Performance 100 12 TJ = -55 °C 10 Reverse LeakageICurrent, (mA) IRR (uA) 8 TJ = 75 °C TJ = 125 °C 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 TJ = 175 °C 60 TJ = 125 °C R TJ = 175 °C F Foward I Current, (A) IF (A) TJ = 25 °C C3D04060F Rev. H, 02-2019 3.5 4.0 TJ = 75 °C 40 TJ = 25 °C 20 TJ = -55 °C 0 0 200 400 600 800 1000 (V) VR (V) ReverseVVoltage, R Figure 2. Reverse Characteristics 1200 Typical Performance 35 16 3025 10% 10%Duty Duty 20%Duty Duty 20% 30%Duty Duty 30% 50%Duty Duty 50% 70%Duty Duty 70% DC DC 25 20 15 12 25 (W) PPTot (W) PTOT (W) Tot (A) IF (A) F(peak) IIF(peak) (A) 20 14 30 15 10 10 5 10 20 8 15 6 10 4 5 52 00 2525 50 50 75 75 100 100 ˚C TTCC(°C) 125 125 150 150 0 175 175 25 Figure 3. Current Derating 16 100 100 T ˚C TCC (°C) 125 125 150 150 250 175 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 200 12 10 Capacitance C (pF) (pF) CapacitiveQCharge, (nC) QC (nC) C 75 75 Figure 4. Power Derating Conditions: TJ = 25 °C 14 50 8 6 4 150 100 50 2 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 C3D04060F Rev. H, 02-2019 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 4 3 TJ_initial = 25 °C TJ_initial = 110 °C IFSM (A) 2.5 2 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 3.5 1.5 100 1 0.5 0 0 100 200 300 400 500 600 700 10 10E-6 ReverseVVoltage, (V) VR (V) 100E-6 1E-3 tp (s) Time, tp (s) R Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) 10 10 0.5 1 0.3 0.5 0.1 0.3 1 100E-3 0.05 0.1 0.02 0.05 0.01 0.02 100E-3 10E-3 1E-3 10E-3 1E-6 1E-6 SinglePulse 0.01 SinglePulse 100E-6 1E-3 1E-310E-3 10E-3 10E-6 100E-6 10E-6 100E-3 100E-3 1 Time, tp (s) TT(Sec) (Sec) Figure 9. Transient Thermal Impedance 4 C3D04060F Rev. H, 02-2019 1 10 10010 10E-3 Package Dimensions Package TO-220-F2 SYMBOL A A1 A2 b b1 b2 b3 C D D1 D2 e E E1 G Ho L L1 M ØP Q Q1 Θ Θ1 Θ2 MIN (mm) 4.30 1.80 2.34 0.40 1.00 0.56 0.24 0.40 14.70 4.83 9.70 6.50 12.10 2.98 3.10 2.70 MAX (mm) 4.93 3.90 2.90 0.91 1.40 0.93 0.55 0.80 16.07 2.50 TYP 2.66 TYP 5.33 10.36 7.00 TYP 7.10 28 TYP 13.50 0.50 2.86 TYP 3.40 3.30 3.50 20° TYP 3° TYP 5° TYP PIN 1 PIN 2 Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D04060F TO-220-F2 C3D04060 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C3D04060F Rev. H, 02-2019 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D04060F Rev. H, 02-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power