GD30MPS06J

GD30MPS06J 650V 30A SiC Schottky MPS™ Diode TM Silicon Carbide Schottky Diode VRRM = IF (TC = 144°C) = QC = Features • • • • • • • • Package Gen4 Thin Chip Technology for Low VF Superior Power Efficiency Superior Figure of Merit QC/IF Enhanced Surge Current Robustness Low Thermal Resistance Temperature Independent Fast Switching Positive Temperature Coefficient of VF High dV/dt Ruggedness Case RoHS TO-263-7 Advantages • • • • • • • • 650 V 30 A 46 nC K A REACH Applications Optimal Price Performance Improved System Efficiency Reduced Cooling Requirements Increased System Power Density Zero Reverse Recovery Current High System Reliability Easy to Parallel without Thermal Runaway Enables Extremely Fast Switching • • • • • • • • Power Factor Correction (PFC) Electric Vehicles and Battery Chargers Solar Inverters High Frequency Converters Switched Mode Power Supply (SMPS) Motor Drives Anti-Parallel / Free-Wheeling Diode Induction Heating & Welding Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Repetitive Peak Reverse Voltage Symbol VRRM Continuous Forward Current IF Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM Non-Repetitive Peak Forward Surge Current i2t Value Non-Repetitive Avalanche Energy Diode Ruggedness Power Dissipation Operating and Storage Temperature Jul. 20 Rev 1 IF,MAX ∫i2dt EAS dV/dt PTOT Tj , Tstg Conditions TC = 100°C, D = 1 TC = 135°C, D = 1 TC = 144°C, D = 1 TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 µs TC = 25°C, tP = 10 ms L = 0.6 mH, IAS = 30 A VR = 0 ~ 520 V TC = 25°C Values 650 51 35 30 210 168 126 89 1050 220 276 200 257 -55 to 175 www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf Unit V Note A Fig. 4 A A A A2 s mJ V/ns W °C Fig. 3 Page 1 of 7 GD30MPS06J 650V 30A SiC Schottky MPS™ Diode TM Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time tS Total Capacitance C Conditions Min. IF = 30 A, Tj = 25°C IF = 30 A, Tj = 175°C VR = 650 V, Tj = 25°C VR = 650 V, Tj = 175°C VR = 200 V VR = 400 V IF ≤ IF,MAX dIF/dt = 200 A/µs VR = 200 V VR = 400 V VR = 1 V, f = 1MHz VR = 400 V, f = 1MHz Values Typ. 1.5 1.8 1 6 31 46 Max. 1.8 5 Unit Note V Fig. 1 µA Fig. 2 nC Fig. 7 < 10 ns 735 63 pF Fig. 6 Unit Note °C/W g Fig. 9 Thermal/Package Characteristics Parameter Thermal Resistance, Junction - Case Weight Jul. 20 Rev 1 Symbol RthJC WT Conditions Min. Values Typ. 0.58 1.45 www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf Max. Page 2 of 7 GD30MPS06J 650V 30A SiC Schottky MPS™ Diode Figure 1: Typical Forward Characteristics IF = f(VF,Tj); tP = 250 µs Figure 3: Power Derating Curves PTOT = f(TC); Tj = 175°C Jul. 20 Rev 1 TM Figure 2: Typical Reverse Characteristics IR = f(VR,Tj) Figure 4: Current Derating Curves (Typical VF) IF = f(TC); D = tP/T; Tj ≤ 175°C; fSW > 10kHz www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf Page 3 of 7 GD30MPS06J 650V 30A SiC Schottky MPS™ Diode Figure 5: Current Derating Curves (Maximum VF) IF = f(TC); D = tP/T; Tj ≤ 175°C; fSW > 10kHz Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics QC = f(VR); f = 1MHz Jul. 20 Rev 1 TM Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics C = f(VR); f = 1MHz Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics EC = f(VR); f = 1MHz www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf Page 4 of 7 GD30MPS06J 650V 30A SiC Schottky MPS™ Diode TM Figure 9: Transient Thermal Impedance Zth,jc = f(tP,D); D = tP/T Figure 10: Forward Curve Model Forward Curve Model Equation: IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m × Tj + n (V) m = -0.00115 (V/°C) n = 9.31e-01 (V) Differential Resistance (RDIFF): 1/RDIFF RDIFF(Tj) = a × Tj2 + b × Tj + c (Ω) a = 5.07e-07 (Ω/°C2) b = 5.5e-06 (Ω/°C) c = 0.0194 (Ω) VBI Forward Power Loss Equation: PLOSS = VBI(Tj) × IAVG + RDIFF(Tj) × IRMS2 IF = f(VF,Tj) Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf Page 5 of 7 GD30MPS06J 650V 30A SiC Schottky MPS™ Diode TM Package Dimensions TO-263-7 Package Outline Recommended Solder Pad Layout Package View 0.413(10.48) 0.130(3.3) Case (K) 0.249(6.32) Case (K) 0.640(16.25) 0.0315(0.8) NC A 0.126(3.2) 0.05(1.27) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf Page 6 of 7 GD30MPS06J 650V 30A SiC Schottky MPS™ Diode TM Compliance RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links • SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J_SPICE.zip • PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J_PLECS.zip • CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J_3D.zip • Evaluation Boards: https://www.genesicsemi.com/technical-support • Reliability: https://www.genesicsemi.com/reliability • Compliance: https://www.genesicsemi.com/compliance • Quality Manual: https://www.genesicsemi.com/quality Revision History Date Jul. 27, 2020 Revision Rev 1 Comments Initial Release Supersedes www.genesicsemi.com/sic-schottky-mps/ Jul. 20 Rev 1 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved. Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7