S-1004NB28I-M5T1U

S-1004 Series www.ablic.com www.ablicinc.com BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN © ABLIC Inc., 2014 Rev.2.1_02 The S-1004 Series is a high-accuracy voltage detector developed using CMOS technology. The detection voltage is fixed internally with an accuracy of 1.0% (VDET(S)  2.2 V). It operates with current consumption of 500 nA typ. Apart from the power supply pin, the detection voltage input pin (SENSE pin) is also prepared, so the output is stable even if the SENSE pin falls to 0 V. The release signal can be delayed by setting a capacitor externally, and the release delay time accuracy at Ta = 25C is 15%. Two output forms Nch open-drain output and CMOS output are available.  Features  Detection voltage:  Detection voltage accuracy:        1.0 V to 5.0 V (0.1 V step) 1.0% (2.2 V  VDET(S)  5.0 V) 22 mV (1.0 V  VDET(S)  2.2 V) Current consumption: 500 nA typ. Operation voltage range: 0.95 V to 10.0 V Hysteresis width: 5%  2% Release delay time accuracy: 15% (CD = 4.7 nF, Ta = 25°C) Output form: Nch open-drain output (Active "L") CMOS output (Active "L") Operation temperature range: Ta = 40°C to 85°C Lead-free (Sn 100%), halogen-free  Applications  Power supply monitor for microcomputer and reset for CPU  Constant voltage power supply monitor for TV, Blu-ray recorder and home appliance  Power supply monitor for portable devices such as notebook PC, digital still camera and mobile phone  Packages  SOT-23-5  SNT-6A 1 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Block Diagrams 1. S-1004 Series NA / NB type (Nch open-drain output) SENSE Function Status Output logic Active "L" VDD  *1 *1  Delay circuit OUT *1 VREF *1 VSS CD *1. Parasitic diode Figure 1 2. S-1004 Series CA / CB type (CMOS output) SENSE Function Status Output logic Active "L" VDD *1  *1 *1  Delay circuit OUT *1 VREF *1 VSS CD *1. Parasitic diode Figure 2 2 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Product Name Structure Users can select the output form and detection voltage value for the S-1004 Series. Refer to "1. Product name" regarding the contents of product name, "2. Function list of product types" regarding the product types, "3. Packages" regarding the package drawings and "4. Product name list" regarding details of product name. 1. Product name S-1004 x x xx I - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications*1 M5T1: SOT-23-5, Tape I6T1: SNT-6A, Tape Operation temperature I: Ta = 40C to 85C Detection voltage value 10 to 50 (e.g., when the detection voltage is 1.0 V, it is expressed as 10.) Pin configuration*2 A, B Output form*3 N: Nch open-drain output (Active "L")*4 C: CMOS output (Active "L")*4 *1. *2. *3. *4. 2. Refer to the tape drawing. Refer to " Pin Configurations". Refer to "2. Function list of product types". If you request the product with output logic active "H", contact our sales office. Function list of product types Table 1 Product Type NA NB CA CB 3. Output Form Output Logic Nch open-drain output CMOS output Pin Configuration Active "L" Active "L" Active "L" Active "L" A B A B Package SOT-23-5, SNT-6A SOT-23-5 SOT-23-5, SNT-6A SOT-23-5 Packages Table 2 Package Name SOT-23-5 SNT-6A Dimension MP005-A-P-SD PG006-A-P-SD Package Drawing Codes Tape MP005-A-C-SD PG006-A-C-SD Reel MP005-A-R-SD PG006-A-R-SD Land  PG006-A-L-SD 3 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 4. Product name list 4. 1 S-1004 Series NA type Output form: Nch open-drain output (Active "L") Table 3 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% 4 SOT-23-5 S-1004NA10I-M5T1U S-1004NA11I-M5T1U S-1004NA12I-M5T1U S-1004NA13I-M5T1U S-1004NA14I-M5T1U S-1004NA15I-M5T1U S-1004NA16I-M5T1U S-1004NA17I-M5T1U S-1004NA18I-M5T1U S-1004NA19I-M5T1U S-1004NA20I-M5T1U S-1004NA21I-M5T1U S-1004NA22I-M5T1U S-1004NA23I-M5T1U S-1004NA24I-M5T1U S-1004NA25I-M5T1U S-1004NA26I-M5T1U S-1004NA27I-M5T1U S-1004NA28I-M5T1U S-1004NA29I-M5T1U S-1004NA30I-M5T1U S-1004NA31I-M5T1U S-1004NA32I-M5T1U S-1004NA33I-M5T1U S-1004NA34I-M5T1U S-1004NA35I-M5T1U S-1004NA36I-M5T1U S-1004NA37I-M5T1U S-1004NA38I-M5T1U S-1004NA39I-M5T1U S-1004NA40I-M5T1U S-1004NA41I-M5T1U S-1004NA42I-M5T1U S-1004NA43I-M5T1U S-1004NA44I-M5T1U S-1004NA45I-M5T1U S-1004NA46I-M5T1U S-1004NA47I-M5T1U S-1004NA48I-M5T1U S-1004NA49I-M5T1U S-1004NA50I-M5T1U SNT-6A S-1004NA10I-I6T1U S-1004NA11I-I6T1U S-1004NA12I-I6T1U S-1004NA13I-I6T1U S-1004NA14I-I6T1U S-1004NA15I-I6T1U S-1004NA16I-I6T1U S-1004NA17I-I6T1U S-1004NA18I-I6T1U S-1004NA19I-I6T1U S-1004NA20I-I6T1U S-1004NA21I-I6T1U S-1004NA22I-I6T1U S-1004NA23I-I6T1U S-1004NA24I-I6T1U S-1004NA25I-I6T1U S-1004NA26I-I6T1U S-1004NA27I-I6T1U S-1004NA28I-I6T1U S-1004NA29I-I6T1U S-1004NA30I-I6T1U S-1004NA31I-I6T1U S-1004NA32I-I6T1U S-1004NA33I-I6T1U S-1004NA34I-I6T1U S-1004NA35I-I6T1U S-1004NA36I-I6T1U S-1004NA37I-I6T1U S-1004NA38I-I6T1U S-1004NA39I-I6T1U S-1004NA40I-I6T1U S-1004NA41I-I6T1U S-1004NA42I-I6T1U S-1004NA43I-I6T1U S-1004NA44I-I6T1U S-1004NA45I-I6T1U S-1004NA46I-I6T1U S-1004NA47I-I6T1U S-1004NA48I-I6T1U S-1004NA49I-I6T1U S-1004NA50I-I6T1U BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 4. 2 S-1004 Series NB type Output form: Nch open-drain output (Active "L") Table 4 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% SOT-23-5 S-1004NB10I-M5T1U S-1004NB11I-M5T1U S-1004NB12I-M5T1U S-1004NB13I-M5T1U S-1004NB14I-M5T1U S-1004NB15I-M5T1U S-1004NB16I-M5T1U S-1004NB17I-M5T1U S-1004NB18I-M5T1U S-1004NB19I-M5T1U S-1004NB20I-M5T1U S-1004NB21I-M5T1U S-1004NB22I-M5T1U S-1004NB23I-M5T1U S-1004NB24I-M5T1U S-1004NB25I-M5T1U S-1004NB26I-M5T1U S-1004NB27I-M5T1U S-1004NB28I-M5T1U S-1004NB29I-M5T1U S-1004NB30I-M5T1U S-1004NB31I-M5T1U S-1004NB32I-M5T1U S-1004NB33I-M5T1U S-1004NB34I-M5T1U S-1004NB35I-M5T1U S-1004NB36I-M5T1U S-1004NB37I-M5T1U S-1004NB38I-M5T1U S-1004NB39I-M5T1U S-1004NB40I-M5T1U S-1004NB41I-M5T1U S-1004NB42I-M5T1U S-1004NB43I-M5T1U S-1004NB44I-M5T1U S-1004NB45I-M5T1U S-1004NB46I-M5T1U S-1004NB47I-M5T1U S-1004NB48I-M5T1U S-1004NB49I-M5T1U S-1004NB50I-M5T1U 5 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 4. 3 S-1004 Series CA type Output form: CMOS output (Active "L") Table 5 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% 6 SOT-23-5 S-1004CA10I-M5T1U S-1004CA11I-M5T1U S-1004CA12I-M5T1U S-1004CA13I-M5T1U S-1004CA14I-M5T1U S-1004CA15I-M5T1U S-1004CA16I-M5T1U S-1004CA17I-M5T1U S-1004CA18I-M5T1U S-1004CA19I-M5T1U S-1004CA20I-M5T1U S-1004CA21I-M5T1U S-1004CA22I-M5T1U S-1004CA23I-M5T1U S-1004CA24I-M5T1U S-1004CA25I-M5T1U S-1004CA26I-M5T1U S-1004CA27I-M5T1U S-1004CA28I-M5T1U S-1004CA29I-M5T1U S-1004CA30I-M5T1U S-1004CA31I-M5T1U S-1004CA32I-M5T1U S-1004CA33I-M5T1U S-1004CA34I-M5T1U S-1004CA35I-M5T1U S-1004CA36I-M5T1U S-1004CA37I-M5T1U S-1004CA38I-M5T1U S-1004CA39I-M5T1U S-1004CA40I-M5T1U S-1004CA41I-M5T1U S-1004CA42I-M5T1U S-1004CA43I-M5T1U S-1004CA44I-M5T1U S-1004CA45I-M5T1U S-1004CA46I-M5T1U S-1004CA47I-M5T1U S-1004CA48I-M5T1U S-1004CA49I-M5T1U S-1004CA50I-M5T1U SNT-6A S-1004CA10I-I6T1U S-1004CA11I-I6T1U S-1004CA12I-I6T1U S-1004CA13I-I6T1U S-1004CA14I-I6T1U S-1004CA15I-I6T1U S-1004CA16I-I6T1U S-1004CA17I-I6T1U S-1004CA18I-I6T1U S-1004CA19I-I6T1U S-1004CA20I-I6T1U S-1004CA21I-I6T1U S-1004CA22I-I6T1U S-1004CA23I-I6T1U S-1004CA24I-I6T1U S-1004CA25I-I6T1U S-1004CA26I-I6T1U S-1004CA27I-I6T1U S-1004CA28I-I6T1U S-1004CA29I-I6T1U S-1004CA30I-I6T1U S-1004CA31I-I6T1U S-1004CA32I-I6T1U S-1004CA33I-I6T1U S-1004CA34I-I6T1U S-1004CA35I-I6T1U S-1004CA36I-I6T1U S-1004CA37I-I6T1U S-1004CA38I-I6T1U S-1004CA39I-I6T1U S-1004CA40I-I6T1U S-1004CA41I-I6T1U S-1004CA42I-I6T1U S-1004CA43I-I6T1U S-1004CA44I-I6T1U S-1004CA45I-I6T1U S-1004CA46I-I6T1U S-1004CA47I-I6T1U S-1004CA48I-I6T1U S-1004CA49I-I6T1U S-1004CA50I-I6T1U BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 4. 4 S-1004 Series CB type Output form: CMOS output (Active "L") Table 6 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% SOT-23-5 S-1004CB10I-M5T1U S-1004CB11I-M5T1U S-1004CB12I-M5T1U S-1004CB13I-M5T1U S-1004CB14I-M5T1U S-1004CB15I-M5T1U S-1004CB16I-M5T1U S-1004CB17I-M5T1U S-1004CB18I-M5T1U S-1004CB19I-M5T1U S-1004CB20I-M5T1U S-1004CB21I-M5T1U S-1004CB22I-M5T1U S-1004CB23I-M5T1U S-1004CB24I-M5T1U S-1004CB25I-M5T1U S-1004CB26I-M5T1U S-1004CB27I-M5T1U S-1004CB28I-M5T1U S-1004CB29I-M5T1U S-1004CB30I-M5T1U S-1004CB31I-M5T1U S-1004CB32I-M5T1U S-1004CB33I-M5T1U S-1004CB34I-M5T1U S-1004CB35I-M5T1U S-1004CB36I-M5T1U S-1004CB37I-M5T1U S-1004CB38I-M5T1U S-1004CB39I-M5T1U S-1004CB40I-M5T1U S-1004CB41I-M5T1U S-1004CB42I-M5T1U S-1004CB43I-M5T1U S-1004CB44I-M5T1U S-1004CB45I-M5T1U S-1004CB46I-M5T1U S-1004CB47I-M5T1U S-1004CB48I-M5T1U S-1004CB49I-M5T1U S-1004CB50I-M5T1U 7 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Pin Configurations 1. S-1004 Series NA / CA type 1. 1 SOT-23-5 Top view 5 Table 7 4 Pin No. 1 2 3 4 5 1 2 3 Figure 3 1. 2 Symbol OUT VDD VSS CD SENSE Pin Configuration A Description Voltage detection output pin Power supply pin GND pin Connection pin for delay capacitor Detection voltage input pin SNT-6A Table 8 Top view 1 2 3 6 5 4 Pin No. Figure 4 *1. Symbol Pin Configuration A Description 1 OUT Voltage detection output pin 2 VDD Power supply pin 3 SENSE Detection voltage input pin 4 CD Connection pin for delay capacitor NC*1 5 No connection 6 VSS GND pin The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 2. S-1004 Series NB / CB type 2. 1 SOT-23-5 Top view 5 4 1 2 3 Figure 5 8 Table 9 Pin No. 1 2 3 4 5 Symbol OUT VSS VDD SENSE CD Pin Configuration B Description Voltage detection output pin GND pin Power supply pin Detection voltage input pin Connection pin for delay capacitor BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Absolute Maximum Ratings Table 10 (Ta = 25°C unless otherwise specified) Item Symbol VDDVSS VCD VSENSE Power supply voltage CD pin input voltage SENSE pin input voltage Nch open-drain output product Output voltage VOUT CMOS output product Output current IOUT SOT-23-5 Power dissipation PD SNT-6A Operation ambient temperature Topr Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm  76.2 mm  t1.6 mm (2) Name: JEDEC STANDARD51-7 Unit V V V V V mA mW mW °C °C The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 Power Dissipation (PD) [mW] Caution Absolute Maximum Rating 12.0 VSS  0.3 to VDD  0.3 VSS  0.3 to 12.0 VSS  0.3 to 12.0 VSS  0.3 to VDD  0.3 50 *1 600 400*1 40 to 85 40 to 125 600 400 SNT-6A 300 200 100 0 Figure 6 SOT-23-5 500 0 150 100 50 Ambient Temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) 9 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Electrical Characteristics 1. Nch open-drain output product Table 11 Item Symbol Detection voltage*1 VDET Hysteresis width VHYS Current ISS *2 consumption Operation voltage VDD (Ta = 25°C unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit VDET(S) VDET(S) VDET(S) V 1 1.0 V  VDET(S)  2.2 V  0.022  0.022 0.95 V  VDD  10.0 V VDET(S) VDET(S) VDET(S) V 1 2.2 V  VDET(S)  5.0 V  0.99  1.01 VDET VDET VDET V 1   0.03  0.05  0.07 VDD = 10.0 V, VSENSE = VDET(S)  1.0 V  0.50 0.90 A 2 0.95 0.59 0.73 1.47 1.86  1.00 1.33 2.39 2.50 10.0     V mA mA mA mA 1 3 3 3 3   0.08 A 3 VDET Ta = 40°C to 85°C Ta VDET  100 tDET VDD = 5.0 V  40  s 4 tRESET VDD = VDET(S)  1.0 V, CD = 4.7 nF 10.79 12.69 14.59 ms 4  VDD = 0.95 V VDD = 1.2 V VDD = 2.4 V VDD = 4.8 V Output current IOUT Output transistor Nch VDS*3 = 0.5 V VSENSE = 0.0 V Leakage current ILEAK Output transistor Nch *3 VDD = 10.0 V, VDS = 10.0 V, VSENSE = 10.0 V Detection voltage temperature coefficient*4 Detection *5 delay time Release *6 delay time SENSE pin resistance *1. *2. *3. *4. 350 ppm/C 1 1.0 V  VDET(S)  1.2 V 5.0 19.0 42.0 M 2 1.2 V  VDET(S)  5.0 V 6.0 30.0 98.0 M 2 VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage range in Table 3 or Table 4) The current flowing through the SENSE pin resistance is not included. VDS: Drain-to-source voltage of the output transistor The temperature change of the detection voltage [mV/°C] is calculated by using the following equation. RSENSE VDET VDET [mV/°C]*1 = VDET(S) (typ.)[V]*2  Ta  V [ppm/°C]*3  1000 Ta DET *5. *6. 10 *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient The time period from when the pulse voltage of 6.0 V  VDET(S)  2.0 V or 0 V is applied to the SENSE pin to when VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 k. The time period from when the pulse voltage of 0.95 V  10.0 V is applied to the SENSE pin to when VOUT reaches VDD  90%, after the output pin is pulled up to VDD by the resistance of 100 k. BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 2. CMOS output product Table 12 Item Symbol Detection voltage*1 VDET Hysteresis width VHYS Current ISS *2 consumption Operation voltage VDD Output current Detection voltage temperature coefficient*4 Detection *5 delay time Release *6 delay time SENSE pin resistance *1. *2. *3. *4. (Ta = 25°C unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit VDET(S) VDET(S) VDET(S) V 1 1.0 V  VDET(S)  2.2 V  0.022  0.022 0.95 V  VDD  10.0 V VDET(S) VDET(S) VDET(S) V 1 2.2 V  VDET(S)  5.0 V  0.99  1.01 VDET VDET VDET V 1   0.03  0.05  0.07  0.50 0.90 A 2  VDD = 0.95 V VDD = 1.2 V VDD = 2.4 V VDD = 4.8 V 0.95 0.59 0.73 1.47 1.86  1.00 1.33 2.39 2.50 10.0     V mA mA mA mA 1 3 3 3 3 VDD = 4.8 V 1.62 2.60  mA 5 VDD = 6.0 V 1.78 2.86  mA 5 VDET Ta = 40°C to 85°C Ta VDET  100 350 ppm/C 1 tDET VDD = 5.0 V  40  s 4 tRESET VDD = VDET(S)  1.0 V, CD = 4.7 nF 10.79 12.69 14.59 ms 4 IOUT VDD = 10.0 V, VSENSE = VDET(S)  1.0 V Output transistor Nch VDS*3 = 0.5 V VSENSE = 0.0 V Output transistor Pch VDS*3 = 0.5 V VSENSE = 10.0 V 5.0 19.0 42.0 M 2 1.0 V  VDET(S)  1.2 V 1.2 V  VDET(S)  5.0 V 6.0 30.0 98.0 M 2 VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage range in Table 5 or Table 6) The current flowing through the SENSE pin resistance is not included. VDS: Drain-to-source voltage of the output transistor The temperature change of the detection voltage [mV/°C] is calculated by using the following equation. RSENSE VDET VDET [mV/°C]*1 = VDET(S) (typ.)[V]*2  Ta  V [ppm/°C]*3  1000 Ta DET *5. *6. *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient The time period from when the pulse voltage of 6.0 V  VDET(S)  2.0 V or 0 V is applied to the SENSE pin to when VOUT reaches VDD / 2. The time period from when the pulse voltage of 0.95 V  10.0 V is applied to the SENSE pin to when VOUT reaches VDD  90%. 11 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Test Circuits R 100 k VDD VDD VDD VDD SENSE OUT  VSS V   CD V V Figure 7 Test Circuit 1 (Nch open-drain output product)  VDD VDD  V VSS Figure 9 VSS Test Circuit 2 Figure 10 R 470 k or 100 k P.G. CD Figure 11 Test Circuit 4 (Nch open-drain output product) V VDD  V SENSE OUT VSS Figure 13 12 CD CD Test Circuit 5  A  VDS V Test Circuit 3 SENSE OUT VSS Oscilloscope CD Figure 12 Test Circuit 4 (CMOS output product) VDS VDD  A VDD VDD Oscilloscope  V SENSE OUT VSS SENSE OUT P.G.  CD VDD CD VDD VDD  SENSE OUT A VSS Figure 8 Test Circuit 1 (CMOS output product) A VDD SENSE OUT BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Standard Circuits 1. Nch open-drain output product R 100 k VDD SENSE OUT CD VSS CD *1. *1 The delay capacitor (CD) should be connected directly to the CD pin and the VSS pin. Figure 14 2. CMOS output product VDD SENSE VSS OUT CD CD *1. *1 The delay capacitor (CD) should be connected directly to the CD pin and the VSS pin. Figure 15 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 13 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Explanation of Terms 1. Detection voltage (VDET) The detection voltage is a voltage at which the output in Figure 18 or Figure 19 turns to "L". The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (VDET min.) and the maximum (VDET max.) is called the detection voltage range (Refer to Figure 16). Example: In the S-1004Cx18, the detection voltage is either one in the range of 1.778 V  VDET  1.822 V. This means that some S-1004Cx18 have VDET = 1.778 V and some have VDET = 1.822 V. 2. Release voltage (VDET) The release voltage is a voltage at which the output in Figure 18 or Figure 19 turns to "H". The release voltage varies slightly among products of the same specification. The variation of release voltage between the specified minimum (VDET min.) and the maximum (VDET max.) is called the release voltage range (Refer to Figure 17). The range is calculated from the actual detection voltage (VDET) of a product and is in the range of VDET  1.03  VDET  VDET  1.07. Example: For the S-1004Cx18, the release voltage is either one in the range of 1.832 V  VDET  1.949 V. This means that some S-1004Cx18 have VDET = 1.832 V and some have VDET = 1.949 V. VSENSE Detection voltage VDET max. Detection voltage range VDET min. Release voltage VDET max. Release voltage range VDET min. VSENSE VOUT VOUT tRESET tDET Figure 16 Detection Voltage  V 14 R 100 k VDD VDD Figure 18 Figure 17 VDD VDD SENSE OUT VSS CD   V Test Circuit of Detection Voltage and Release Voltage (Nch open-drain output product) V Figure 19 Release Voltage SENSE OUT VSS CD  V Test Circuit of Detection Voltage and Release Voltage (CMOS output product) BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 3. Hysteresis width (VHYS) The hysteresis width is the voltage difference between the detection voltage and the release voltage (the voltage at point B  the voltage at point A = VHYS in "Figure 23 Timing Chart of S-1004 Series NA / NB Type" and "Figure 25 Timing Chart of S-1004 Series CA / CB Type"). Setting the hysteresis width between the detection voltage and the release voltage, prevents malfunction caused by noise on the input voltage. 4. Release delay time (tRESET) The release delay time is the time period from when the input voltage to the SENSE pin exceeds the release voltage (VDET) to when the output from the OUT pin inverts. The release delay time changes according to the delay capacitor (CD). VSENSE VDET OUT tRESET Figure 20 5. Release Delay Time Feed-through current The feed-through current is a current that flows instantaneously to the VDD pin at the time of detection and release of a voltage detector. The feed-through current is large in CMOS output product, small in Nch open-drain output product. 6. Oscillation In applications where an input resistor is connected (Figure 21), taking a CMOS output (active "L") product for example, the feed-through current which is generated when the output goes from "L" to "H" (at the time of release) causes a voltage drop equal to [feed-through current]  [input resistance]. Since the VDD pin and the SENSE pin are shorted as in Figure 21, the SENSE pin voltage drops at the time of release. Then the SENSE pin voltage drops below the detection voltage and the output goes from "H" to "L". In this status, the feed-through current stops and its resultant voltage drop disappears, and the output goes from "L" to "H". The feed-through current is then generated again, a voltage drop appears, and repeating the process finally induces oscillation. VDD RA VIN VDD OUT SENSE VSS CD RB (CMOS output product) GND Figure 21 Example for Bad Implementation Due to Detection Voltage Change 15 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Operation 1. Basic operation 1. 1 S-1004 Series NA / NB type (1) When the power supply voltage (VDD) is the minimum operation voltage or higher, and the SENSE pin voltage (VSENSE) is the release voltage (VDET) or higher, the Nch transistor is turned off to output VDD ("H") when the output is pulled up. Since the Nch transistor (N1) is turned off, the input voltage to the comparator is (RB  RC )  VSENSE . RA  RB  RC (2) Even if VSENSE decreases to VDET or lower, VDD is output when VSENSE is higher than the detection voltage (VDET). When VSENSE decreases to VDET or lower (point A in Figure 23), the Nch transistor is turned on. And then VSS ("L") is output from the OUT pin after the elapse of the detection delay time (tDET). RB  VSENSE . At this time, N1 is turned on, and the input voltage to the comparator is RA  RB (3) Even if VSENSE further decreases to the IC's minimum operation voltage or lower, the output from the OUT pin is stable when VDD is minimum operation voltage or higher. (4) Even if VSENSE exceeds VDET, VSS is output when VSENSE is lower than VDET. (5) When VSENSE increases to VDET or higher (point B in Figure 23), the Nch transistor is turned off. And then VDD is output from the OUT pin after the elapse of the release delay time (tRESET) when the output is pulled up. SENSE VDD R 100 k RA VDD   *1 *1 VSENSE RB *1 VREF N1 Nch RC VSS *1 CD *1. OUT Delay circuit CD Parasitic diode Figure 22 Operation of S-1004 Series NA / NB Type (1) (2) (3) (4) (5) B Hysteresis width A (VHYS) Release voltage (VDET) Detection voltage (VDET) VSENSE Minimum operation voltage VSS VDD Output from OUT pin VSS tDET Figure 23 16 tRESET Timing Chart of S-1004 Series NA / NB Type  V BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 1. 2 S-1004 Series CA / CB type (1) When the power supply voltage (VDD) is the minimum operation voltage or higher, and the SENSE pin voltage (VSENSE) is the release voltage (VDET) or higher, the Nch transistor is turned off and the Pch transistor is turned on to output VDD ("H"). Since the Nch transistor (N1) is turned off, the input voltage to the comparator is (RB  RC )  VSENSE . RA  RB  RC (2) Even if VSENSE decreases to VDET or lower, VDD is output when VSENSE is higher than the detection voltage (VDET). When VSENSE decreases to VDET or lower (point A in Figure 25), the Nch transistor is turned on and the Pch transistor is turned off. And then VSS ("L") is output from the OUT pin after the elapse of the detection delay time (tDET). RB  VSENSE . At this time, N1 is turned on, and the input voltage to the comparator is RA  RB (3) Even if VSENSE further decreases to the IC's minimum operation voltage or lower, the output from the OUT pin is stable when VDD is minimum operation voltage or higher. (4) Even if VSENSE exceeds VDET, VSS is output when VSENSE is lower than VDET. (5) When VSENSE increases to VDET or higher (point B in Figure 25), the Nch transistor is turned off and the Pch transistor is turned on. And then VDD is output from the OUT pin after the elapse of the release delay time (tRESET). SENSE VDD Pch RA VDD  VSENSE RB *1 VREF N1 Nch  V *1 RC VSS CD *1. OUT Delay circuit  *1 *1 *1 CD Parasitic diode Figure 24 Operation of S-1004 Series CA / CB Type (1) (2) (3) (4) (5) B Hysteresis width A (VHYS) Release voltage (VDET) Detection voltage (VDET) VSENSE Minimum operation voltage VSS VDD Output from OUT pin VSS tDET Figure 25 tRESET Timing Chart of S-1004 Series CA / CB Type 17 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 2. SENSE pin 2. 1 Error when detection voltage is set externally By connecting a node that was resistance-divided by the resistor (RA) and the resistor (RB) to the SENSE pin as seen in Figure 26, the detection voltage can be set externally. For conventional products without the SENSE pin, RA cannot be too large since the resistance-divided node must be connected to the VDD pin. This is because a feed-through current will flow through the VDD pin when it goes from detection to release, and if RA is large, problems such as oscillation or larger error in the hysteresis width may occur. In the S-1004 Series, RA and RB are easily made larger since the resistance-divided node can be connected to the SENSE pin through which no feed-through current flows. However, be careful of error in the current flowing through the internal resistance (RSENSE) that will occur. Although RSENSE in the S-1004 Series is large (5 M min.) to make the error small, RA and RB should be selected such that the error is within the allowable limits. 2. 2 Selection of RA and RB In Figure 26, the relation between the external setting detection voltage (VDX) and the actual detection voltage (VDET) is ideally calculated by the equation below. VDX = VDET  (1  RA RB ) ··· (1) However, in reality there is an error in the current flowing through RSENSE. When considering this error, the relation between VDX and VDET is calculated as follows. RA RB || RSENSE ) RA  = VDET  1  RB  RSENSE   RB  RSENSE   RA RA = VDET  (1  R )  R  VDET B SENSE VDX = VDET  (1  ··· (2) RA . By using equations (1) and (2), the error is calculated as VDET  R SENSE The error rate is calculated as follows by dividing the error by the right-hand side of equation (1). RA  RB RA || RB  100 [%] = R  100 [%] RSENSE  (RA  RB) SENSE ··· (3) As seen in equation (3), the smaller the resistance values of RA and RB compared to RSENSE, the smaller the error rate becomes. Also, the relation between the external setting hysteresis width (VHX) and the hysteresis width (VHYS) is calculated by equation below. Error due to RSENSE also occurs to the relation in a similar way to the detection voltage. VHX = VHYS  (1  RA RB ) ··· (4) RA VDX VDET VDD SENSE RSENSE RB Figure 26 Caution 18 OUT CD VSS Detection Voltage External Setting Circuit If RA and RB are large, the SENSE pin input impedance becomes higher and may cause a malfunction due to noise. In this case, connect a capacitor between the SENSE pin and the VSS pin. BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 2. 3 Power on sequence Apply power in the order, the VDD pin then the SENSE pin. As seen in Figure 27, when VSENSE  VDET, the OUT pin output (VOUT) rises and the S-1004 Series becomes the release status (normal operation). VDD VDET VSENSE tRESET VOUT Figure 27 Caution 2. 4 If power is applied in the order the SENSE pin then the VDD pin, an erroneous release may occur even if VSENSE  VDET. Precautions when shorting between the VDD pin and the SENSE pin 2. 4. 1 Input resistor Do not connect the input resistor (RA) when shorting between the VDD pin and the SENSE pin. A feed-through current flows through the VDD pin at the time of release. When connecting the circuit shown as Figure 28, the feed-through current of the VDD pin flowing through RA will cause a drop in VSENSE at the time of release. At that time, oscillation may occur if VSENSE  VDET. RA VDD OUT SENSE CD VDD VSS Figure 28 2. 4. 2 Parasitic resistance and parasitic capacitance Due to the difference in parasitic resistance and parasitic capacitance of the VDD pin and the SENSE pin, power may be applied to the SENSE pin first. Note that an erroneous release may occur if this happens (refer to "2. 3 Power on sequence"). Caution In CMOS output product, make sure that the VDD pin input impedance does not become too high, regardless of the above. Since a feed-through current is large, a malfunction may occur if the VDD pin voltage changes greatly at the time of release. 19 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 2. 5 Malfunction when VDD falls As seen in Figure 29, note that if the VDD pin voltage (VDD) drops steeply below 1.2 V when VDET  VSENSE  VDET, erroneous detection may occur. When VDD_Low  1.2 V, erroneous detection does not occur. When VDD_Low  1.2 V, the more the VDD falling amplitude increases or the shorter the falling time becomes, the easier the erroneous detection. Perform thorough evaluation in actual application. VDD_High VDD VDD_Low (Voltage drops below 1.2 V.) VDET VSENSE VDET VOUT falling influenced by VDD falling (erroneous detection) VOUT Figure 29 The S-1004Cx50 example in Figure 30 shows an example of erroneous detection boundary conditions. 12 VDD_High [V] 10 8 Danger of erroneous detection 6 4 2 0 0.1 1 10 tF [s] 100 1000 Figure 30 Remark Test conditions Product name: VSENSE: VDD_High: VDD_Low: VDD: t F: S-1004Cx50 VDET(S)  0.1 V VDD pin voltage before falling VDD pin voltage after falling (0.95 V) VDD_High  VDD_Low Falling time of VDD from VDD_High  VDD  10% to VDD_Low  VDD  10% VDD_High VDD_High  VDD  10% VDD VDD_Low  VDD  10% VDD_Low tF Figure 31 20 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 3. Delay circuit The delay circuit has the function that adjusts the release delay time (tRESET) from when the SENSE pin voltage (VSENSE) reaches release voltage (VDET) to when the output from OUT pin inverts. tRESET is determined by the delay coefficient, the delay capacitor (CD), and the release delay time when the CD pin is open (tRESET0), and calculated by the equation below. tRESET [ms] = Delay coefficient  CD [nF]  tRESET0 [ms] Table 13 Operation Temperature Ta = 85°C Ta = 25°C Ta = 40°C Delay Coefficient Min. 1.78 2.30 2.68 Typ. 2.29 2.66 3.09 Max. 3.13 3.07 3.57 Table 14 Operation Temperature Ta = 85°C Ta = 25°C Ta = 40°C Caution 1. 2. 3. Release Delay Time when CD Pin is Open (tRESET0) Min. 0.020 ms 0.021 ms 0.024 ms Typ. 0.049 ms 0.059 ms 0.074 ms Max. 0.130 ms 0.164 ms 0.202 ms Mounted board layout should be made in such a way that no current flows into or flows from the CD pin since the impedance of the CD pin is high, otherwise correct delay time cannot be provided. There is no limit for the capacitance of CD as long as the leakage current of the capacitor can be ignored against the built-in constant current value (30 nA to 200 nA). The detection delay time (tDET) cannot be adjusted by CD. 21 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 4. Other characteristics 4. 1 Temperature characteristics of detection voltage The shaded area in Figure 32 shows the temperature characteristics of detection voltage in the operation temperature range. VDET [V] 0.945 mV/°C VDET25*1 0.945 mV/°C 40 *1. Figure 32 4. 2 25 85 Ta [°C] VDET25 is a detection voltage value at Ta = 25°C. Temperature Characteristics of Detection Voltage (Example for VDET = 2.7 V) Temperature characteristics of release voltage The temperature change VDET of the release voltage is calculated by using the temperature change Ta VDET of the detection voltage as follows: Ta VDET VDET VDET =  Ta VDET Ta The temperature change of the release voltage and the detection voltage has the same sign consequently. 4. 3 Temperature characteristics of hysteresis voltage The temperature change of the hysteresis voltage is expressed as follows: VDET VDET VHYS VDET  =  Ta Ta VDET Ta 22 VDET VDET  and is calculated as Ta Ta BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Precautions  Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.  In CMOS output product of the S-1004 Series, the feed-through current flows at the time of detection and release. If the VDD pin input impedance is high, malfunction may occur due to the voltage drop by the feed-through current when releasing.  In CMOS output product, oscillation may occur if a pull-down resistor is connected and falling speed of the SENSE pin voltage (VSENSE) is slow near the detection voltage when the VDD pin and the SENSE pin are shorted.  When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics of the external parts should be taken into consideration. ABLIC Inc. shall not bear any responsibility for patent infringements related to products using the circuits described herein.  ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 23 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Characteristics (Typical Data) Detection voltage (VDET), Release voltage (VDET) vs. Temperature (Ta) VDD = 5.0 V VDET, VDET [V] S-1004Cx10 1.2 1.1 VDET 1.0 VDET 0.9 0.8 40 25 25 Ta [C] VDET, VDET [V] 50 VDET 2.3 75 85 40 25 0 25 Ta [C] 50 75 85 VDET 5.0 VDET 4.8 40 25 0 25 Ta [C] 50 75 85 Hysteresis width (VHYS) vs. Temperature (Ta) VDD = 5.0 V S-1004Cx24 7.0 5.0 4.0 3.0 40 25 25 Ta [C] 50 75 85 VDD = 5.0 V 6.0 5.0 4.0 40 25 5.0 4.0 3.0 0 S-1004Cx50 7.0 3.0 VDD = 5.0 V 6.0 VHYS [%] 6.0 VHYS [%] 2.4 VDD = 5.0 V S-1004Cx10 7.0 VHYS [%] VDET 5.2 4.6 24 VDD = 5.0 V 2.5 2.2 0 S-1004Cx50 5.4 2. S-1004Cx24 2.6 VDET, VDET [V] 1. 0 25 Ta [C] 50 75 85 40 25 0 25 Ta [C] 50 75 85 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 3. Detection voltage (VDET) vs. Power supply voltage (VDD) 1.020 2.420 1.010 2.410 VDET [V] S-1004Cx24 2.430 VDET [V] S-1004Cx10 1.030 Ta = 25C 1.000 0.990 0.980 0.970 0.0 2.0 4.0 6.0 VDD [V] 8.0 Ta = 40C 2.400 Ta = 85C 2.390 2.380 Ta = 85C Ta = 40C Ta = 25C 2.370 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1004Cx50 5.050 Ta = 25C VDET [V] 5.025 5.000 Ta = 40C Ta = 85C 4.975 4.950 0.0 4. 2.0 4.0 6.0 VDD [V] 8.0 10.0 Hysteresis width (VHYS) vs. Power supply voltage (VDD) S-1004Cx24 7.0 S-1004Cx10 7.0 Ta = 25C Ta = 40C 5.0 4.0 Ta = 25C 6.0 VHYS [%] VHYS [%] 6.0 Ta = 85C 3.0 5.0 Ta = 40C 4.0 Ta = 85C 3.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1004Cx50 7.0 Ta = 85C VHYS [%] 6.0 5.0 Ta = 25C 4.0 Ta = 40C 3.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 25 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 5. Current consumption (ISS) vs. Power supply voltage (VDD) S-1004Cx10 Ta = 25°C, VSENSE = VDET(S)  0.1 V (during detection) 1.00 S-1004Cx10 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 1.00 0.80 ISS [A] ISS [A] 0.80 0.60 0.40 0.20 0.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1004Cx24 Ta = 25°C, VSENSE = VDET(S)  0.1 V (during detection) 1.00 0.0 4.0 6.0 VDD [V] 8.0 10.0 0.80 ISS [A] ISS [A] 2.0 S-1004Cx24 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 1.00 0.80 0.60 0.40 0.20 0.60 0.40 0.20 0.00 0.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1004Cx50 Ta = 25°C, VSENSE = VDET(S)  0.1 V (during detection) 1.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1004Cx50 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 1.00 0.80 ISS [A] 0.80 ISS [A] 0.40 0.20 0.00 0.60 0.40 0.20 0.60 0.40 0.20 0.00 0.00 0.0 26 0.60 2.0 4.0 6.0 VDD [V] 8.0 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 6. Current consumption (ISS) vs. SENSE pin input voltage (VSENSE) S-1004Cx10 Ta = 25°C, VDD = VDET(S)  1.0 V, VSENSE = 0.0 V  10.0 V 1.00 S-1004Cx24 Ta = 25°C, VDD = VDET(S)  1.0 V, VSENSE = 0.0 V  10.0 V 1.00 0.80 ISS [A] ISS [A] 0.80 0.60 0.40 0.20 0.60 0.40 0.20 0.00 0.00 0.0 2.0 4.0 6.0 VSENSE [V] 8.0 10.0 0.0 2.0 4.0 6.0 VSENSE [V] 8.0 10.0 S-1004Cx50 Ta = 25°C, VDD = VDET(S)  1.0 V, VSENSE = 0.0 V  10.0 V 1.00 ISS [A] 0.80 0.60 0.40 0.20 0.00 0.0 7. 2.0 4.0 6.0 VSENSE [V] 8.0 10.0 Current consumption (ISS) vs. Temperature (Ta) S-1004Cx24 VDD = VDET(S)  1.0 V, VSENSE = VDET(S)  1.0 V (during release) 0.30 0.25 0.25 0.20 0.20 ISS [A] ISS [A] S-1004Cx10 VDD = VDET(S)  1.0 V, VSENSE = VDET(S)  1.0 V (during release) 0.30 0.15 0.10 0.05 0.00 0.15 0.10 0.05 40 25 0.00 0 25 Ta [C] 50 75 85 40 25 0 25 Ta [C] 50 75 85 S-1004Cx50 VDD = VDET(S)  1.0 V, VSENSE = VDET(S)  1.0 V (during release) 0.30 ISS [A] 0.25 0.20 0.15 0.10 0.05 0.00 40 25 0 25 Ta [C] 50 75 85 27 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series Nch transistor output current (IOUT) vs. VDS S-1004Nx12 20.0 IOUT [mA] 15.0 VDD = 3.6 V 10.0 VDD = 2.4 V 5.0 VDD = 1.2 V VDD = 0.95 V 0.0 0.0 1.0 2.0 3.0 4.0 VDS [V] 5.0 6.0 Nch transistor output current (IOUT) vs. Power supply voltage (VDD) S-1004Nx12 Ta = 40C 3.0 2.0 Ta = 85C 1.0 Pch transistor output current (IOUT) vs. Power supply voltage (VDD) 11. VDS = 0.5 V, VSENSE = 0.0 V (during detection) S-1004Cx12 VDS = 0.5 V, VSENSE = VDET(S)  1.0 V (during release) 5.0 Ta = 40C 4.0 IOUT [mA] IOUT [mA] 4.0 Pch transistor output current (IOUT) vs. VDS S-1004Cx12 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 40.0 VDD = 8.4 V VDD = 0.95 V 30.0 VDD = 1.2 V VDD = 7.2 V 20.0 VDD = 6.0 V VDD = 4.8 V 10.0 VDD = 3.6 V VDD = 2.4 V 0.0 2.0 4.0 6.0 8.0 0.0 10.0 VDS [V] VDD = 6.0 V VDD = 4.8 V 10. 9. Ta = 25°C, VSENSE = 0.0 V (during detection) IOUT [mA] 8. Ta = 25C 0.0 2.0 4.0 6.0 VDD [V] 8.0 Ta = 85C 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 Minimum operation voltage (VOUT) vs. Power supply voltage (VDD) 10.0 VOUT [V] VOUT [V] S-1004Nx10 VSENSE = VDD, Pull-up to 10 V, Pull-up resistance: 100 k 12.0 Ta = 40C Ta = 25C 8.0 6.0 Ta = 85C 4.0 2.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDD [V] Minimum operation voltage (VOUT) vs. SENSE pin input voltage (VSENSE) Remark VDS: Drain-to-source voltage of the output transistor S-1004Nx10 VDD = 0.95 V, Pull-up to 10 V, Pull-up resistance: 100 k 12.0 10.0 VOUT [V] VOUT [V] S-1004Nx10 VDD = 0.95 V, Pull-up to VDD, Pull-up resistance: 100 k 1.8 1.6 1.4 1.2 1.0 Ta = 40C 0.8 0.6 Ta = 25C Ta = 85C 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSENSE [V] 28 Ta = 25C 0.0 10.0 S-1004Nx10 VSENSE = VDD, Pull-up to VDD, Pull-up resistance: 100 k 1.8 1.6 1.4 1.2 1.0 0.8 Ta = 40C Ta = 25C 0.6 0.4 Ta = 85C 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDD [V] 13. 2.0 1.0 0.0 12. 3.0 8.0 6.0 4.0 Ta = 40C Ta = 85C Ta = 25C 2.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSENSE [V] BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series Dynamic response vs. Output pin capacitance (COUT) (CD pin; open) Response time [ms] 1 0.1 0.01 0.001 0.00001 tPLH tPHL 0.001 0.01 0.0001 Output pin capacitance [F] Response time [ms] 1 0.01 0.001 0.00001 Response time [ms] S-1004Nx10 100 10 100 0.01 0.001 0.00001 tPHL 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 tPHL 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 Ta = 25°C, VDD = VDET(S)  1.0 V tPLH tPHL 0.1 0.01 0.00001 tPLH 0.1 tPLH 1 S-1004Nx50 Response time [ms] 0.1 1 Ta = 25°C, VDD = VDET(S)  1.0 V Ta = 25°C, VDD = VDET(S)  1.0 V S-1004Cx50 0.1 S-1004Cx24 Response time [ms] Ta = 25°C, VDD = VDET(S)  1.0 V S-1004Cx10 0.001 0.01 0.0001 Output pin capacitance [F] S-1004Nx24 Response time [ms] 14. 0.1 100 10 Ta = 25°C, VDD = VDET(S)  1.0 V tPLH 1 0.1 0.01 0.00001 tPHL 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 Ta = 25°C, VDD = VDET(S)  1.0 V 10 tPLH 1 0.1 0.01 0.00001 tPHL 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 29 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 1 s 1 s VIH*1 SENSE pin voltage VIL*2 tPHL tPLH VDD VDD  90% Output voltage VDD  10% *1. *2. VIH = 10 V VIL = 0.95 V Figure 33 SENSE OUT P.G. VSS Figure 34 Caution 30 R 100 k VDD VDD Test Condition of Response Time VDD VDD Oscilloscope CD Test Circuit of Response Time (Nch open-drain output product) P.G. Figure 35 SENSE OUT VSS Oscilloscope CD Test Circuit of Response Time (CMOS output product) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 15. Release delay time (tRESET) vs. CD pin capacitance (CD) (Without output pin capacitance) Ta = 25°C, VDD = VDET(S)  1.0 V S-1004Cx10 10000 10000 1000 tRESET [ms] 1000 tRESET [ms] Ta = 25°C, VDD = VDET(S)  1.0 V S-1004Cx24 100 10 1 0.1 100 10 1 0.1 0.01 0.01 0.1 1 10 CD [nF] 100 0.01 0.01 1000 0.1 1 10 CD [nF] 100 1000 Ta = 25°C, VDD = VDET(S)  1.0 V S-1004Cx50 10000 tRESET [ms] 1000 100 10 1 0.1 0.01 0.01 16. 0.1 1 10 CD [nF] 100 1000 Release delay time (tRESET) vs. Temperature (Ta) S-1004Cx24 S-1004Cx10 CD = 4.7 nF, VDD = VDET(S)  1.0 V 16 16 15 tRESET [ms] 15 tRESET [ms] CD = 4.7 nF, VDD = VDET(S)  1.0 V 14 13 12 14 13 12 11 11 40 25 0 25 Ta [C] 50 75 85 40 25 0 25 Ta [C] 50 75 85 S-1004Cx50 16 CD = 4.7 nF, VDD = VDET(S)  1.0 V tRESET [ms] 15 14 13 12 11 40 25 0 25 Ta [C] 50 75 85 31 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 17. Release delay time (tRESET) vs. Power supply voltage (VDD) Ta = 25°C, CD = 4.7 nF S-1004Cx10 16 tRESET [ms] 15 14 13 12 11 0.0 2.0 6.0 4.0 8.0 10.0 VDD [V] 1 s VIH*1 SENSE pin voltage VIL*2 tRESET VDD VDD  90% Output voltage VSS *1. *2. VIH = 10 V VIL = 0.95 V Figure 36 R 100 k VDD VDD P.G. SENSE OUT VSS Test Condition of Release Delay Time VDD VDD Oscilloscope CD P.G. CD Figure 37 Caution 32 Test Circuit of Release Delay Time (Nch open-drain output product) SENSE OUT VSS Oscilloscope CD CD Figure 38 Test Circuit of Release Delay Time (CMOS output product) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series  Application Circuit Examples 1. Microcomputer reset circuits In microcomputers, when the power supply voltage is lower than the minimum operation voltage, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to the normal level, the microcomputer needs to be initialized. Otherwise, the microcomputer may malfunction after that. Reset circuits to protect microcomputer in the event of current being momentarily switched off or lowered. Using the S-1004 Series which has the low minimum operation voltage, the high-accuracy detection voltage and the hysteresis width, reset circuits can be easily constructed as seen in Figure 39 and Figure 40. VDD VDD1 VDD SENSE OUT VSS CD VDD VDD1 VDD SENSE OUT VSS CD Microcomputer Microcomputer GND Figure 39 Caution Example of Reset Circuit (Nch open-drain output product) GND Figure 40 Example of Reset Circuit (CMOS output product) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 33 BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN Rev.2.1_02 S-1004 Series 2. Change of detection voltage If there is not a product with a specified detection voltage value in the S-1004 Series, the detection voltage can be changed by using a resistance divider or a diode, as seen in Figure 41 to Figure 44. In Figure 41 and Figure 42, hysteresis width also changes. VDD VDD R RA VIN RA 100 k VDD VIN SENSE OUT VSS CD SENSE OUT VSS CD RB RB GND GND Figure 41 Remark Detection voltage change when using a resistance divider (Nch open-drain output product) Figure 42 Detection voltage change when using a resistance divider (CMOS output product) RA  RB  VDET RB RA  RB Hysteresis width =  VHYS RB Detection voltage = VDD VDD Vf1 Vf1 R VIN 100 k VDD VIN SENSE OUT VSS VDD SENSE OUT CD GND VSS CD GND Figure 43 Remark Caution 1. 2. 34 VDD Detection voltage change when using a diode (Nch open-drain output product) Figure 44 Detection voltage change when using a diode (CMOS output product) Detection voltage = Vf1  (VDET) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. Set the constants referring to "2. 1 Error when detection voltage is set externally" in " Operation". 2.9±0.2 1.9±0.2 4 5 1 2 +0.1 0.16 -0.06 3 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.3 TITLE SOT235-A-PKG Dimensions No. MP005-A-P-SD-1.3 ANGLE UNIT mm ABLIC Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 +0.2 ø1.0 -0 2.0±0.05 0.25±0.1 4.0±0.1 1.4±0.2 3.2±0.2 3 2 1 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE SOT235-A-Carrier Tape No. MP005-A-C-SD-2.1 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP005-A-R-SD-1.1 SOT235-A-Reel TITLE No. MP005-A-R-SD-1.1 ANGLE QTY. UNIT mm ABLIC Inc. 3,000 1.57±0.03 6 1 5 4 2 3 +0.05 0.08 -0.02 0.5 0.48±0.02 0.2±0.05 No. PG006-A-P-SD-2.1 TITLE SNT-6A-A-PKG Dimensions No. PG006-A-P-SD-2.1 ANGLE UNIT mm ABLIC Inc. +0.1 ø1.5 -0 4.0±0.1 2.0±0.05 0.25±0.05 +0.1 1.85±0.05 ø0.5 -0 4.0±0.1 0.65±0.05 3 2 1 4 5 6 Feed direction No. PG006-A-C-SD-2.0 TITLE SNT-6A-A-Carrier Tape No. PG006-A-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. PG006-A-R-SD-1.0 SNT-6A-A-Reel TITLE No. PG006-A-R-SD-1.0 ANGLE QTY. UNIT mm ABLIC Inc. 5,000 0.52 1.36 2 0.52 0.2 0.3 1. 2. 1 (0.25 mm min. / 0.30 mm typ.) (1.30 mm ~ 1.40 mm) 0.03 mm SNT 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 2. (0.25 mm min. / 0.30 mm typ.) (1.30 mm ~ 1.40 mm) No. PG006-A-L-SD-4.1 TITLE SNT-6A-A -Land Recommendation No. PG006-A-L-SD-4.1 ANGLE UNIT mm ABLIC Inc. Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described herein. 4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to the use of the products outside their specified ranges. 5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear, biological or chemical weapons or missiles, or use any other military purposes. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by ABLIC, Inc. Do not apply the products to the above listed devices and equipments. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of the products. 9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system in which the products are used must be sufficiently evaluated and judged whether the products are allowed to apply for the system on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express permission of ABLIC Inc. 14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales representative. 15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into the English language and the Chinese language, shall be controlling. 2.4-2019.07 www.ablic.com