TSC5304EDCP ROG

TSC5304EDCP ROG

  • 厂商:

    TAIWANSEMICONDUCTOR(台湾半导体)

  • 封装:

    TO-252(DPAK)

  • 描述:

    TRANSISTOR, NPN, 400V, 4A, 8A/A

  • 详情介绍
  • 数据手册
  • 价格&库存
TSC5304EDCP ROG 数据手册
TSC5304ED High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation ● Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application Structure Silicon Triple Diffused Type ● NPN Silicon Transistor ● Integrated Anti-parallel Collector-Emitter Diode Ordering Information Part No. Package TO-252 TO-251 Packing 2.5Kpcs / 13” Reel 75pcs / Tube eco TSC5304EDCP ROG TSC5304EDCH C5G mm ● en de d ● 4A Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage @ VBE=0V VCES 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Peak Current (tp
TSC5304EDCP ROG
物料型号:TSC5304ED

器件简介:这是一个高压NPN晶体管,带有内部的续流二极管,适用于高效率的反饱和操作。

引脚分配:Pi Pin Definition: 1. Base 2. Collector 3. Emitter

参数特性: - 集电极-基极电压(BVCEO):400V - 集电极-基极击穿电压(BVCBO):700V - 集电极电流(Ic):4A - 饱和电压(VCE(SAT)):典型值0.25V(在Ic=0.5A, IB=0.1A时)

功能详解: - 内部集成的续流二极管使得反饱和操作更加高效 - 低基极驱动需求 - 适用于半桥照明球ast应用 - 结构为硅三重扩散类型,NPN硅晶体管,集成了反向并行的集电极-发射极二极管

应用信息: - 适合用于半桥照明球ast应用

封装信息: - TO-251 (IPAK) 和 TO-252 (DPAK) 两种封装形式 - 订购信息包括不同封装和包装方式,例如TSC5304EDCP ROG(TO-252封装,每卷2.5Kpcs)和TSC5304EDCH C5G(TO-251封装,每管75pcs)
TSC5304EDCP ROG 价格&库存

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