BZX85C100RL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA BZX85C3V3RL SERIES 1–1.3 Watt DO-41 Glass Zener Voltage Regulator Diodes 1–1.3 WATT DO-41 GLASS GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP One Watt Hermetically Sealed Glass Silicon Zener Diodes 1 WATT ZENER REGULATOR DIODES 3.3–100 VOLTS Specification Features: • Complete Voltage Range — 3.3 to 100 Volts • DO-41 Package • Double Slug Type Construction • Metallurgically Bonded Construction • Oxide Passivated Die Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from case for 10 seconds FINISH: All external surfaces are corrosion resistant with readily solderable leads POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea CASE 59-03 DO-41 GLASS MAXIMUM RATINGS Rating DC Power Dissipation @ TA = 50°C Derate above 50°C Operating and Storage Junction Temperature Range Symbol Value Unit PD 1 6.67 Watt mW/°C TJ, Tstg – 65 to +200 °C PD, MAXIMUM DISSIPATION (WATTS) 1.25 L = 1″ L = 1/8″ 1 L = LEAD LENGTH TO HEAT SINK L = 3/8″ 0.75 0.5 0.25 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C) 180 200 Figure 1. Power Temperature Derating Curve Motorola TVS/Zener Device Data 500 mW DO-35 Glass Data Sheet 6-1 GENERAL DATA — 500 mW DO-35 GLASS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (VF = 1.2 V Max, IF = 200 mA for all types.) Zener Voltage VZT (V) (Notes 2 and 3) Zener Impedance ZZ (ohms) (Note 4) Leakage Current (µA) (mA) VR (V) IR Max Surge Current TA = 25 25°C C ir (mA) (Note 5) 400 500 500 500 600 1 1 1 1 1 1 1 1 1 1.5 60 30 5 3 3 1380 1260 1190 1070 970 10 7 4 3.5 3 500 400 300 300 200 1 1 1 1 0.5 2 2 3 4 4.5 1 1 1 1 1 890 810 730 660 605 25 25 25 20 5 5 7 9 200 200 200 350 0.5 0.5 0.5 0.5 5 6.5 7 8.4 1 1 0.5 0.5 550 500 454 380 14.1 15.6 17.1 19.1 20 15 15 15 10 15 15 20 400 500 500 500 0.5 0.5 0.5 0.5 9.1 10.5 11 12.5 0.5 0.5 0.5 0.5 344 304 285 250 20.8 22.8 25.1 28 31 23.3 25.6 28.9 32 35 10 10 8 8 8 25 25 30 30 35 600 600 750 1000 1000 0.5 0.5 0.25 0.25 0.25 15.5 17 19 21 23 0.5 0.5 0.5 0.5 0.5 205 190 170 150 135 BZX85C36RL BZX85C43RL BZX85C47RL 34 40 44 38 46 50 8 6 4 40 50 90 1000 1000 1500 0.25 0.25 0.25 25 30 33 0.5 0.5 0.5 125 110 95 BZX85C56RL BZX85C62RL BZX85C75RL BZX85C82RL BZX85C100RL 52 58 70 77 96 60 66 80 87 106 4 4 4 2.7 2.7 120 125 150 200 350 2000 2000 2000 3000 3000 0.25 0.25 0.25 0.25 0.25 39 43 51 56 68 0.5 0.5 0.5 0.5 0.5 80 70 60 55 45 T Type (Note 1) VZ Min VZ Max Test C Current t IZT (mA) BZX85C3V3RL BZX85C3V6RL BZX85C3V9RL BZX85C4V3RL BZX85C4V7RL 3.1 3.4 3.7 4 4.4 3.5 3.8 4.1 4.6 5 80 60 60 50 45 20 15 15 13 13 BZX85C5V1RL BZX85C5V6RL BZX85C6V2RL BZX85C6V8RL BZX85C7V5RL 4.8 5.2 5.8 6.4 7 5.4 6 6.6 7.2 7.9 45 45 35 35 35 BZX85C8V2RL BZX85C9V1RL BZX85C10RL BZX85C12RL 7.7 8.5 9.4 11.4 8.7 9.6 10.6 12.7 BZX85C13RL BZX85C15RL BZX85C16RL BZX85C18RL 12.4 13.8 15.3 16.8 BZX85C22RL BZX85C24RL BZX85C27RL BZX85C30RL BZX85C33RL Max at IZT NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION The type numbers listed have zener voltage min/max limits as shown. Device tolerance of ±2% are indicated by a “B” instead of “C.” NOTE 2. SPECIALS AVAILABLE INCLUDE: Max at IZ NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT) or (IZK) is superimposed on IZT or IZK. Nominal zener voltages between the voltages shown and tighter voltage tolerances. For detailed information on price, availability, and delivery, contact your nearest Motorola representative. NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT VZ is measured after the test current has been applied to 40 ± 10 msec., while maintaining the lead temperature (TL) at 30°C ± 1°C, 3/8″ from the diode body. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current IZT. However, actual device capability is as described in Figure 5 of General Data DO-41 glass. 500 mW DO-35 Glass Data Sheet 6-2 Motorola TVS/Zener Device Data GENERAL DATA — 500 mW DO-35 GLASS b. Range for Units to 12 to 100 Volts θVZ , TEMPERATURE COEFFICIENT (mV/°C) θVZ , TEMPERATURE COEFFICIENT (mV/°C) a. Range for Units to 12 Volts +12 +10 +8 +6 +4 +2 VZ @ IZT RANGE 0 –2 –4 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (VOLTS) 10 11 12 100 70 50 30 20 RANGE 10 7 5 VZ @ IZT 3 2 1 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100 Ppk , PEAK SURGE POWER (WATTS) 175 θVZ , TEMPERATURE COEFFICIENT (mV/°C) θ JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (mV/°C/W) Figure 2. Temperature Coefficients (–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.) 150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.9 1 VZ @ IZ TA = 25°C +4 +2 20 mA 0 0.01 mA 1 mA NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: EFFECT TEMPERATURE COEFFICIENTS –2 –4 3 4 5 6 7 L, LEAD LENGTH TO HEAT SINK (INCHES) VZ, ZENER VOLTAGE (VOLTS) Figure 3. Typical Thermal Resistance versus Lead Length Figure 4. Effect of Zener Current 100 70 50 30 0.8 +6 RECTANGULAR WAVEFORM TJ = 25°C PRIOR TO INITIAL PULSE 11 V–100 V NONREPETITIVE 5% DUTY CYCLE 8 3.3 V–10 V NONREPETITIVE 20 10 7 5 10% DUTY CYCLE 20% DUTY CYCLE 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 This graph represents 90 percentile data points. For worst case design characteristics, multiply surge power by 2/3. 1 2 5 PW, PULSE WIDTH (ms) 10 20 50 100 200 500 1000 Figure 5. Maximum Surge Power Motorola TVS/Zener Device Data 500 mW DO-35 Glass Data Sheet 6-3 1000 500 1000 700 500 TJ = 25°C iZ(rms) = 0.1 IZ(dc) f = 60 Hz VZ = 2.7 V Z Z , DYNAMIC IMPEDANCE (OHMS) Z Z , DYNAMIC IMPEDANCE (OHMS) GENERAL DATA — 500 mW DO-35 GLASS 200 47 V 100 27 V 50 20 10 6.2 V 5 2 IZ = 1 mA 200 100 70 50 5 mA 20 20 mA 10 7 5 2 1 1 0.1 0.2 0.5 1 2 5 10 IZ, ZENER CURRENT (mA) 20 50 100 1 2 Figure 6. Effect of Zener Current on Zener Impedance 3 5 7 10 20 30 VZ, ZENER CURRENT (mA) 50 70 100 Figure 7. Effect of Zener Voltage on Zener Impedance 10000 7000 5000 400 300 200 TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE 1000 700 500 0 V BIAS 100 C, CAPACITANCE (pF) 2000 200 100 70 50 I R , LEAKAGE CURRENT (µ A) TJ = 25°C iZ(rms) = 0.1 IZ(dc) f = 60 Hz 1 V BIAS 50 20 10 8 50% OF BREAKDOWN BIAS 20 4 10 7 5 1 2 5 10 20 VZ, NOMINAL VZ (VOLTS) 50 100 Figure 9. Typical Capacitance versus VZ 2 1 0.7 0.5 1000 500 +125°C I F , FORWARD CURRENT (mA) 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 +25°C 0.002 MINIMUM MAXIMUM 200 100 50 20 75°C 10 25°C 5 150°C 0°C 2 0.001 1 3 4 5 6 7 8 9 10 11 12 13 14 15 0.4 0.5 0.6 0.7 0.8 0.9 1 VZ, NOMINAL ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 8. Typical Leakage Current Figure 10. Typical Forward Characteristics 500 mW DO-35 Glass Data Sheet 6-4 1.1 Motorola TVS/Zener Device Data GENERAL DATA — 500 mW DO-35 GLASS APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = θLAPD + TA. θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30 to 40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + ∆TJL. ∆TJL is the increase in junction temperature above the lead Motorola TVS/Zener Device Data temperature and may be found as follows: ∆TJL = θJLPD. θJL may be determined from Figure 3 for dc power conditions. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(∆TJ) may be estimated. Changes in voltage, VZ, can then be found from: ∆V = θVZ ∆TJ. θVZ, the zener voltage temperature coefficient, is found from Figure 2. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 5 be exceeded. 500 mW DO-35 Glass Data Sheet 6-5 GENERAL DATA — 500 mW DO-35 GLASS Zener Voltage Regulator Diodes — Axial Leaded 1–1.3 Watt DO-41 Glass B NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D K F DIM A B D F K A F K MILLIMETERS MIN MAX 4.07 5.20 2.04 2.71 0.71 0.86 — 1.27 27.94 — INCHES MIN MAX 0.160 0.205 0.080 0.107 0.028 0.034 — 0.050 1.100 — CASE 59-03 DO-41 GLASS (Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix MPQ (Units) Tape and Reel RL, RL2 6K Tape and Ammo TA, TA2 4K NOTE: 1. The “2” suffix refers to 26 mm tape spacing. (Refer to Section 10 for more information on Packaging Specifications.) 500 mW DO-35 Glass Data Sheet 6-6 Motorola TVS/Zener Device Data