MMBT3904

MMBT3904 SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT-23 FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR MARKING: 1AM (3)C 1AM (1)B (2)E ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA Collector cut-off current ICBO VCB= 60V, IE=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC=50mA 60 hFE(3) VCE=1V, IC=100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V DC current gain Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf VCE=20V,IC=10mA, f=100MHz 300 300 MHz VCC=3V, VBE(off)=-0.5V IC=10mA, 35 ns 35 ns VCC=3V, IC=10mA, IB1= IB2=1mA 200 ns VCC=3V, IC=10mA, IB1= IB2=1mA 50 ns IB1=1mA VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA CLASSIFICATION OF hFE RANK RANGE http://www.microdiode.com O Y 100–200 200–300 Rev:2024A1 Page :1 MMBT3904 Typical Characteristics Static Characteristic 400uA DC CURRENT GAIN COLLECTOR CURRENT 350uA 60 300uA 250uA 200uA 40 —— IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ hFE 80 hFE 400 500uA 450uA IC (mA) 100 150uA Ta=100℃ 300 Ta=25℃ 200 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 0 0.1 20 Ta=100℃ 100 Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 0.0 1 10 3 COLLECTOR CURRENT IC 100 100 30 IC 200 1 10 3 (mA) 100 30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ 30 Cib (pF) Ta=100℃ C 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 300 (mA) 3 Ta=25℃ 1 3 Cob 0.3 0.1 0.2 0.4 0.6 0.8 1.0 1 0.1 1.2 fT 300 1 0.3 —— IC PC 250 10 3 REVERSE VOLTAGE BASE-EMITTER VOLTAGE VBE (V) —— V 20 (V) Ta VCE=20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 200 100 200 150 100 50 0 1 3 10 COLLECTOR CURRENT http://www.microdiode.com 30 IC (mA) 60 0 25 50 75 AMBIENT TEMPERATURE Rev:2024A1 100 Ta 125 150 (℃ ) Page :2 MMBT3904 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2024A1 Page :3 MMBT3904 SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2024A1 Page :4