2N1893

2N1893 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level (2N1893J) • JANTX level (2N1893JX) • JANTXV level (2N1893JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/182 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous O TC = 25°C unless otherwise specified Symbol VCEO VCBO Rating 80 120 Unit Volts Volts VEBO 7 Volts IC 500 mA 0.8 5.7 3.0 17.2 W mW/°C W mW/°C Power Dissipation, TA = 25 C Derate above 60OC Power Dissipation, TC = 25OC Derate above 25OC Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 °C Thermal Resistance RθJA 175 °C/W Copyright 2010 Rev. G PT PT SEMICOA Corporation. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N1893 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Symbol V(BR)CEO Test Conditions IC = 30 mA Min 80 Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 Ω 100 Collector-Base Cutoff Current Emitter-Base Cutoff Current ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Typ Units Volts Volts 100 10 15 100 10 VCB = 120 Volts VCB = 90 Volts VCE = 90 Volts, TA = 150 OC VEB = 7 Volts VEB = 5 Volts On Characteristics Max µA nA µA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat VCEsat Test Conditions IC = 1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts, TA = -55 OC IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA Min 20 35 40 20 Typ Max Units 120 1.3 5.0 Volts Volts Max Units Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE1 hFE2 Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz f = 1 kHz VCE = 5 Volts, IC = 1 mA VCE = 10 Volts, IC = 5 mA Min Typ 3 10 35 45 100 150 4 8 Ω µΩ Short Circuit Input Impedance hie VCB = 10V, IC = 5mA Open Circuit Output Admittance hoe VCB = 10V, IC = 5mA 0.5 Open Circuit reverse Voltage Transfer Ratio hre VCB = 10V, IC = 5mA 1.5x10-4 Open Circuit Output Capacitance VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz COBO 2 15 pF 30 ns Switching Characteristics Pulse Response Copyright 2010 Rev. G ton + toff SEMICOA Corporation. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2