TIP115

TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Features Equivalent Circuit • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP110 / TIP111 / TIP112 C B 1 TO-220 R1 1.Base 2.Collector 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ E Ordering Information Part Number Top Mark Package Packing Method TIP115 TIP115 TO-220 3L (Single Gauge) Bulk TIP117TU TIP117 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value TIP115 -60 TIP117 -100 TIP115 -60 TIP117 -100 Unit VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -2 A ICP Collector Current (Pulse) -4 A IB Base Current (DC) -50 mA TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2001 Fairchild Semiconductor Corporation TIP115 / TIP117 Rev. 1.1.0 V V www.fairchildsemi.com TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor November 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 50 Unit W Electrical Characteristics(1) Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage ICEO Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain Conditions TIP115 IC = -30 mA, IB = 0 TIP117 Min. Max. -60 Unit V -100 TIP115 VCE = -30 V, IB = 0 -2 TIP117 VCE = -50 V, IB = 0 -2 TIP115 VCB = -60 V, IE = 0 -1 TIP117 VCB = -100 V, IE = 0 -1 VEB = -5 V, IC = 0 -2 mA IC = -2 A, IB = -8 mA -2.5 V VCE = -4 V, IC = -1 A 1000 VCE = -4 V, IC =- 2 A 500 mA mA VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage VCE = -4 V, IC = -2 A -2.8 V Output Capacitance VCB = -10 V, IE = 0, f = 0.1 MHz 200 pF Cob Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2001 Fairchild Semiconductor Corporation TIP115 / TIP117 Rev. 1.1.0 www.fairchildsemi.com 2 TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor Thermal Characteristics 10k -5 IB = -1000μA VCE = -4V IB = -800μA -4 IB IB = -700μA IB = -600μA IB = -300μA IB = -500μA -3 0μA = -40 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -900μA IB = -200μA -2 IB = -100μA -1 -1 -2 -3 -4 100 10 -0.01 -0 -0 1k -5 -0.1 -10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 Figure 2. DC Current Gain -100 1000 IC = 500 IB Cob[pF], CAPACITANCE f = 0.1 MHz -10 VBE(sat) -1 VCE(sat) -0.1 -0.01 -0.1 -1 100 10 1 -0.01 -10 IC[A], COLLECTOR CURRENT -0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance -10 80 PC[W], POWER DISSIPATION s s 5m 1m IC[A], COLLECTOR CURRENT 70 DC -1 TIP 115 TIP 116 TIP 117 -0.1 -1 -10 50 40 30 20 10 0 -100 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area © 2001 Fairchild Semiconductor Corporation TIP115 / TIP117 Rev. 1.1.0 60 Figure 6. Power Derating www.fairchildsemi.com 3 TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2001 Fairchild Semiconductor Corporation TIP115 / TIP117 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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