TIP32C

TIP32 / TIP32A / TIP32C PNP Epitaxial Silicon Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP31 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP32 TIP32 TO-220 3L (Single Gauge) Bulk TIP32A TIP32A TO-220 3L (Single Gauge) Bulk TIP32ATU TIP32A TO-220 3L (Single Gauge) Rail TIP32C TIP32C TO-220 3L (Single Gauge) Bulk TIP32CTU TIP32C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage Value TIP32 -40 TIP32A -60 TIP32C -100 TIP32 -40 TIP32A -60 TIP32C -100 Unit V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A ICP Collector Current (Pulse) -5 A IB Base Current -3 A TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2000 Fairchild Semiconductor Corporation TIP32 / TIP32A / TIP32C Rev. 1.1.0 V www.fairchildsemi.com TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor November 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 40 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions Collector-Emitter Sustaining Voltage(1) TIP32A IC = -30 mA, IB = 0 TIP32C ICEO ICES Collector Cut-Off Current Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) VCE(sat) VBE(on) fT Max. -60 V -100 TIP32 / TIP32A VCE = -30 V, IB = 0 -0.3 TIP32C VCE = -60 V, IB = 0 -0.3 TIP32 VCE = -40 V, VEB = 0 -200 TIP32A VCE = -60 V, VEB = 0 -200 TIP32C VCE = -100 V, VEB = 0 -200 VEB = -5 V, IC = 0 (1) Collector-Emitter Saturation Voltage Unit -40 TIP32 VCEO(sus) Min. -1 VCE = -4 V, IC = -1 A 25 VCE = -4 V, IC =- 3 A 10 mA μA mA 50 IC = -3 A, IB = -375 mA -1.2 V Base-Emitter On Voltage VCE = -4 V, IC = -3 A -1.8 V Current Gain Bandwidth Product VCE = -10 V, IC = -500 mA, f = 1 MHz (1) 3.0 MHz Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2000 Fairchild Semiconductor Corporation TIP32 / TIP32A / TIP32C Rev. 1.1.0 www.fairchildsemi.com 2 TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor Thermal Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 -1 -10 -100 -1000 -10000 IC/IB = 10 -1000 VBE(sat) -100 VCE(sat) -10 -1 -10000 -10 -1000 -10000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage -10 50 IC(MAX) (PULSE) 45 IC(MAX) (DC) s 1m PC[W], POWER DISSIPATION 100μs s 5m IC[A], COLLECTOR CURRENT -100 -1 TIP32 VCEO MAX. TIP32A VCEO MAX. TIP32B VCEO MAX. TIP32C VCEO MAX. 40 35 30 25 20 15 10 5 -0.1 0 -10 -100 0 50 75 100 125 150 175 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area © 2000 Fairchild Semiconductor Corporation TIP32 / TIP32A / TIP32C Rev. 1.1.0 25 Figure 4. Power Derating www.fairchildsemi.com 3 TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor Typical Performance Characteristics TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2000 Fairchild Semiconductor Corporation TIP32 / TIP32A / TIP32C Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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