D44H8 / NZT44H8 / D44H11
NPN Power Amplifier
Features
• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from process 4Q.
C
E
C
B
C
B
TO-220
E
D44H8 / D44H11
Absolute Maximum Ratings*
SOT-223
NZT44H8
TA=25°C unless otherwise noted
Value
Symbol
VCEO
IC
TJ, TSTG
Parameter
Units
D44H8
NZT44H8
D44H11
Collector-Emitter Voltage
60
80
V
Collector Current
8.0
10.0
A
- Continuous
Operating and Storage Junction Temperature Range
°C
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
TA=25°C unless otherwise noted
Max.
Symbol
Parameter
D44H8
D44H11
PD
Total Device Dissipation
Derate above 25°C
60
480
RθJC
Thermal Resistance, Junction to Case
2.1
RθJA
Thermal Resistance, Junction to Ambient
62.5
*NZT44H8
1.5
12
© 2010 Fairchild Semiconductor Corporation
W
mW/°C
°C/W
83.3
*Device mounted on FR-4 PCB 36mm X 18mm X 1.5mm; mounting pad for the collector lead min.
D44H8 / NZT44H8 / D44H11 Rev. B2
Units
°C/W
6cm2.
www.fairchildsemi.com
1
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
February 2010
Symbol
TA=25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown D44H8 / NZT44H8
IC = 100mA, IB = 0
Voltage
D44H11
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
60
80
D44H8 / NZT44H8 VCB = 60V, IE = 0
VCB = 80V, IE = 0
D44H11
VEB = 5V, IC = 0
V
10
μA
100
μA
On Characteristics
60
40
DC Current Gain
VCE = 1V, IC = 2A
VCE = 1V, IC = 4A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 8A, IB = 0.4A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 8A, IB = 0.8A
1.5
V
VBE(on)
Base-Emitter On Voltage
VCE = 2V, IC = 10mA
0.65
V
hFE
0.52
Small Signal Characteristics
fT
Current Gain-Bandwidth Product
IC = 500mA, VCE = 10V
© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
50
MHz
www.fairchildsemi.com
2
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
Electrical Characteristics
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
www.fairchildsemi.com
3
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
www.fairchildsemi.com
4
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
www.fairchildsemi.com
5
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
Physical Dimensions
TO-220
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
www.fairchildsemi.com
6
D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
Physical Dimensions (Continued)
SOT-223
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
www.fairchildsemi.com
7
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SM
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®
*
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I47
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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