TSC5804D
Taiwan Semiconductor
High Voltage Fast-Switching NPN Power Transistor
FEATURES
KEY PERFORMANCE PARAMETERS
●
High Voltage Capability
●
Fast Switching Speed
●
Pb-free plating
●
RoHS compliant
●
Halogen-free mold compound
PARAMETER
VALUE
UNIT
BVCEO
450
V
BVCBO
1050
V
IC
5
A
0.5
V
VCE(SAT)
●
Electronic Ballast
●
Switch mode power supply
TO-252
(DPAK)
mm
TO-251
(IPAK)
en
de
d
APPLICATION
IC=1A, IB=0.2A
eco
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
VCBO
1050
V
Collector-Emitter Voltage @ VBE=0V
VCES
450
V
Emitter-Base Voltage
VEBO
15
V
Collector Current
IC
5
A
Collector Peak Current (tp
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