MMBT5401

MMBT5401 SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for Medium Power Amplification and Switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING:2L MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Power Dissipation 0.3 W Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ (3)C 2L (1)B RΘJA (2)E ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions Min Typ Max Unit IC=-100µA, IE=0 -160 V IC=-1mA, IB=0 -150 V IE=-10µA, IC=0 -5 V VCB=-120V, IE=0 -0.1 uA VEB=-4V, IC=0 -0.1 uA hFE(1) * VCE=-5V, IC=-1mA 80 hFE(2) * VCE=-5V, IC=-10mA 100 hFE(3) * VCE=-5V, IC=-50mA 50 300 VCE(sat)1 * IC=-10mA, IB=-1mA -0.2 V VCE(sat)2 * IC=-50mA, IB=-5mA -0.5 V VBE(sat)1 * IC=-10mA, IB=-1mA -1 V VBE(sat)2 * IC=-50mA, IB=-5mA -1 V VCE=-5V,IC=-10mA, f=30MHz fT Transition frequency 100 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK RANGE http://www.microdiode.com L H 100–200 200–300 Rev:2024A1 Page :1 MMBT5401 Typical Characteristics Static Characteristic -20 -100uA VCE=-5V COMMON EMITTER Ta=25℃ -90uA o hFE -70uA 200 -12 -60uA -10 -50uA -8 -40uA -6 Ta=100 C 250 -80uA DC CURRENT GAIN (mA) -14 COLLECTOR CURRENT -16 IC -18 hFE —— IC 300 150 o Ta=25 C 100 -30uA -4 50 -20uA -2 IB=-10uA -0 -0 -3 0 -6 -9 COLLECTOR-EMITTER VOLTAGE VCE -1 VBEsat —— IC -1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0.6 Ta=100℃ -0.4 -0.2 -1 -10 COLLECTOR CURRENT IC IC -0.1 Ta=25℃ -1 (mA) -10 Cob / Cib 100 (mA) IC —— VCB / VEB VCE=-5V o (pF) o Ta=100 C Ta=25℃ -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 10 Cob 1 -0.5 -1.0 -1 -10 REVERSE VOLTAGE VBE(V) —— IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) 300 250 fT (MHz) Cib C -10 CAPACITANCE COLLECTOR CURRENT IC (mA) f=1MHz IE=0 / IC=0 Ta=25 C -0.1 -0.0 TRANSITION FREQUENCY -600 -100 COLLECTOR CURRENT IC —— V BE -100 (mA) Ta=100℃ -0.01 -0.1 -600 -100 IC β=10 Ta=25℃ -0.0 -0.1 -600 -100 VCEsat —— -1 β=10 -0.8 -10 COLLECTOR CURRENT (V) 200 150 100 50 —— V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C 0 0.0 -0 -5 -10 -15 COLLECTOR CURRENT http://www.microdiode.com -20 IC -25 (mA) -30 0 25 50 75 AMBIENT TEMPERATURE Rev:2024A1 100 Ta 125 150 (℃) Page :2 MMBT5401 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2024A1 Page :3 MMBT5401 SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2024A1 Page :4