MMBT5401

PART CODE: SOT23T5401S02L SPECIFICATION SHEET SPECIFICATION SHEET NO. N0310- SOT23T5401S02L DATE Mar. 10, 2021 REVISION A0 DESCRIPITION SMD Plastic-Encapsulate Transistors, SOT-23 series, 3 pads MMBT5401 Type, Complementary PNP Collector Power Dissipation 300mW. Collector Current 600mA Max. Operating Temp. Range -55°C ~+150°C, Package in Tape/Reel, 3000pcs/Reel RoHS/RoHS III compliant CUSTOMER CUSTOMER PART NUMBER CROSS REF. PART NUMBER ORIGINAL PART NUMBER MDD MMBT5401 PART CODE SOT23T5401S02L VENDOR APPROVE Issued/Checked/Approved DATE: March 10, 2021 CUSTOMER APPROVE DATE: NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES MAIN FEATURE • Epitaxial planar die construction • Complementary PNP • Collector Power Dissipation 300mW • Collector Current 600mA. APPLICATION • For printed circuit board RFQ PART CODE GUIDE Request For Quotation SOT23 T5401 S 02L 1 2 3 4 1) SOT23: SMD Plastic-Encapsulate Transistors, 3 pads SOT-23 series Code 2) T5401: Type code for MMBT5401 3) S: Package code, Package in Tape/Reel, 3000pcs/Reel 4) 02L: Marking code for “2L” on the case surface, Different Marking for different specification. MORE ITEMS AVAILABLE SOT23C1623S0L4 SOT23C1623S0L5 SOT23C1623S0L6 SOT23C1623S0L7 SOT23C3356SR23 SOT23C3356SR24 SOT23C3356SR25 SOT23T493AS93A SOT23BC807SAW SOT23BC807SBW SOT23BC807SCW SOT23BC856S03A SOT23BC856S03B SOT23BC857S03E SOT23BC857S03F SOT23BC857S03G SOT23BC858S03J SOT23BC858S03K SOT23BC858S03L SOT23T5401S02L SOT2355551S0G1 SOT23BTA44S03D SOT23BTA94S04D SOT23BTA56S2GM SOT232222AS01P SOT232907AS02F SOT23T3904S1AM SOT23T3906S02A SOT23T4401S02X SOT23T4403S02T SOT23S8050SJ3Y SOT23S8550S2TY SOT23S9012S2T1 SOT23S9013S0J3 SOT23S9014S0J6 SOT23S9015S0M6 SOT23S9018S0J8 SOT23SS805S0Y1 SOT23SS855S0Y2 SOT23BC817S06A SOT23BC817S06B SOT23BC817S06C NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES DIMENSION (Unit: Inch/mm) Image for reference Marking: 2L Symbol Value ( mm) Min. A Typ. 1.0 1.4 A1 SOT-23 Max. 0.10 b 0.35 0.50 c 0.10 0.20 D 2.70 E 1.40 1.60 E1 2.40 2.80 e 2.90 3.10 1.9 L 0.10 L1 0.40 Ɵ 0° 0.30 10° Recommend Pad Layout 1.Base 2.Emitter 3.Collector NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES MECHANICAL DATA Case Terminals Polarity Mounting Position Weight per piece JEDEC SOT-23 molded plastic body Solder plated, Solderable per MIL-STD-750, Method 2026 Polarity symbol marking on case Any 0.00019 Ounce, 0.00591 grams MAX. RATINGS AT Ta=25 °C Parameter SYMBOLS VALUE UNITS LIMIT Collector-Base Voltage V CBO -160 Volts Collector-Emitter Voltage V CEO -160 Volts Emitter-Base Voltage V EBO -5 Volts Collector Current IC -0.6 A Collector Power Dissipation PC 0.3 W R QJA 416 °C/W TJ +150 °C Storage temperature range T STG -55 ~ +150 °C NextGen Components, Inc. sales@NextGenComponent.com Thermal Resistance Junction to Ambient Junction temperature www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES ELECTRICAL CHARACTERISTICS AT Ta= 25 °C Parameter SYMBOLS VALUE Min. Collector-base breakdown voltage Collector-emitter breakdown voltage Typ. UNIT Condition Max. V(BR)CBO -160 V Ic= -100μA, IE=0 V(BR)CEO * -150 V I c= -1mA, IB=0 V(BR)EBO -5 V I E=-10μA, IC=0 Emitter-base breakdown voltage Collector cut-off current I CBO -0.1 µA VCB=-120V, IE=0 Emitter cut-off current I EBO -0.1 µA VEB= -4V, IC=0 DC Current gain h FE(1)* 80 h FE(2) 100 h FE(3) * 50 Collector-emitter saturation voltage V CE(sat) * Base-emitter saturation voltage V BE(sat) * VCE=-5V, IC= -1mA 300 VCE=-5V, IC= -10mA VCE=-5V, IC= -50mA -0.2 V IC=-10 mA, IB=- 1mA IC=-50 mA, IB=-5mA V IC=-10 mA, IB= -1mA IC=-50 mA, IB=-5mA MHz VCE=-5V, IC= -10mA, f=30MHz - -0.5 -1 -1 Transition frequency fT 100 Delay time td - ns Rise time tr - ns Storage time tS - ns Fall time tf - ns - Note: * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. CLASSIFICATION OF hFE Rank L H Range 100 ~ 200 200 ~ 300 Marking 2L 2L NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES RELIABILITY Number Experiment Items Experiment Method And Conditions Reference Documents 1 Solder Resistance Test Test 260°C± 5°C for 10 ± 2 sec. Immerse body into solder 1/16” ± 1/32" MIL-STD-750D METHOD-2031.2 2 Solderability Test 230°C ±5°C for 5 sec. MIL-STD-750D METHOD-2026.1 0 3 Pull Test 1 kg in axial lead direction for 10 sec. MIL-STD-750D METHOD-2036.4 4 Bend Test 0.5Kg Weight Applied To Each Lead, Bending Arcs 90 °C ± 5 °C For 3 Times MIL-STD-750D METHOD-2036.4 5 High Temperature Reverse Bias Test TA=100°C for 1000 Hours at VR=80% Rated VR MIL-STD-750D METHOD-1038.4 6 Forward Operation Life Test TA=25°C Rated Average Rectified Current MIL-STD-750D METHOD-1027.3 7 Intermittent Operation Life Test On state: 5 min with rated IRMS Power Off state: 5 min with Cool Forced Air. On and off for 1000 cycles. MIL-STD-750D METHOD-1036.3 8 Pressure Cooker Test 15 PSIG, TA=121°C, 4 hours MIL-S-19500 APPENOIXC 9 Temperature Cycling Test -55°C~+125°C; 30 Minutes For Dwelled Time 5 minutes for transferred time. Total: 10 cycles. MIL-STD-750D METHOD-1051.7 10 Thermal Shock Test 0°C for 5 minutes., 100°C for 5minutes, Total: 10 cycles MIL-STD-750D METHOD-1056.7 11 Forward Surge Test 8.3ms Single Sale Sine-wave One Surge. MIL-STD-750D METHOD-4066.4 12 Humidity Test TA=65°C, RH=98% for 1000 hours. MIL-STD-750D METHOD-1021.3 13 High Temperature Storage life Test 150°C for 1000 Hours MIL-STD-750D METHOD-1031.5 NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES SUGGESTED REFLOW PROFILE (For Reference Only) • Recommended peak temperature is over 245℃, If peak temperature is below 245 ℃, you may adjust the following parameters; time length of peak temperature (longer), time length of soldering (longer), thickness of solder paste (thicker) • Welding shall not exceed 2 times • Remark: lead free solder paste (96.5 sn/3.0 Ag/0.5Cu) NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES RATINGS AND CHARACTERISTIC CURVES (For Reference Only) NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES RATINGS AND CHARACTERISTIC CURVES (For Reference Only) NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES TAPE/REEL (Unit: mm) All Devices are packed in accordance with EIA standard RS-481-A and specifications. Item Symbol Tolerance SOT-23 Carrier width A 0.1 3.15 Carrier Length B 0.1 2.77 Carrier Depth C 0.1 1.22 Sprocket hole d 0.05 1.55 7”Reel outside diameter D 2.0 178.00 7”Reel inner diameter D1 Min. 54.4 Feed hole diameter D2 0.5 13.00 Sprocket hole position E 0.1 1.75 Punch hole position F 0.1 3.50 Punch hole pitch P 0.1 4.00 Sprocket hole pitch P0 0.1 4.00 Embossment center P1 0.1 2.00 Overall tape thickness T 0.1 0.25 Tape width W 0.3 8.00 Reel width W1 1.0 19.50 NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com PART CODE: SOT23T5401S02L SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES PACKAGE Case Code Reel Size MPQ (pcs) SOT-23 7” 3,000 Component Spacing (mm) Qty. Per Box (pcs) Inner Box L*W*H (mm) Reel Size (mm) Carton size L*W*H (mm) Qty. Per Carton (pcs) G. W 45,000 212*207*207 178 430*430*230 180,000 6.5 (kg) DISCLAIMER NextGen Component, Inc. reserves the right to make changes to the product(s) and or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information NextGen Components, Inc. sales@NextGenComponent.com www.NextGenComponent.com