TSA1765CW RPG

TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -560V BVCEO -560V IC -150mA VCE(SAT) Ordering Information Features Low Saturation Voltages High Breakdown Voltage Structure ● ● Part No. Package Packing TSA1765CW RPG SOT-223 2.5Kpcs / 13” Reel en de d ● ● -0.5V @ IC=-50mA,IB=-10mA Note: “G” denotes for Halogen Free Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25°C unless otherwise noted) Parameter Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current eco Total Power Dissipation @ TC=25ºC Limit Unit VCBO -560 V VCEO -560 V VEBO -7 V IC -150 ICP -500 IB -50 Ptot 2 W TJ +150 °C TSTG - 55 to +150 °C mm Collector-Emitter Voltage Symbol Operating Junction Temperature Operating Junction and Storage Temperature Range mA Electrical Specifications (Ta = 25°C unless otherwise noted) Conditions tR Parameter Symbol Min Typ Max Unit IC = -1mA, IE = 0 BVCBO -560 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -560 -- -- V Emitter-Base Breakdown Voltage IE = -10uA, IC = 0 BVEBO -7 -- -- V No Collector-Base Breakdown Voltage Collector Cutoff Current VCB = -560V, IE = 0 ICBO -- -- -100 nA Emitter Cutoff Current VEB = -7V, IC = 0 IEBO -- -- -100 nA IC = -20mA, IB = -2mA VCE(SAT) 1 -- -- -0.2 IC = -50mA, IB = -10mA VCE(SAT) 2 -- -- -0.5 Base-Emitter Saturation Voltage IC = -50mA, IB = -10mA VBE(SAT) 1 -- -- -1.0 V Base-Emitter on Voltage VCE = -10V, IC = -50mA VBE(ON) -- -- -1.0 V VCE = -10V, IC = -1mA hFE 1 150 -- -- VCE = -10V, IC = -50mA hFE 2 80 -- 300 VCE = -10V, IC = -100mA hFE 3 -- 15 -- fT 50 -- -- MHz Cob -- -- 8 pF Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency VCE = -20V, IE=-10mA Output Capacitance VCB = -20V, f=1MHz Document Number: DS_P0000259 1 V Version: D15 TSA1765 High Voltage PNP Epitaxial Planar Transistor Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Figure 2. DC Current Gain en de d Figure 1. Static Characteristics Figure 4. Power Derating tR e co mm Figure 3. VCE(SAT) v.s. VBE(SAT) No Figure 5. Safety Operation Area Document Number: DS_P0000259 2 Version: D15 TSA1765 High Voltage PNP Epitaxial Planar Transistor tR Marking Diagram Unit: Millimeters e co mm en de d SOT-223 Mechanical Drawing No Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug Y =Nov Z =Dec W =Sep X =Oct L = Lot Code Document Number: DS_P0000259 3 Version: D15 TSA1765 No tR e co mm en de d High Voltage PNP Epitaxial Planar Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000259 4 Version: D15