TSM150P04LCS
Taiwan Semiconductor
P-Channel Power MOSFET
-40V, -22A, 15mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
VDS
-40
V
RDS(on)
VGS = -10V
15
(max)
VGS = -4.5V
21
mΩ
Qg
23
nC
APPLICATIONS
● POL
● Load Switch
● Motor Drives
SOP-8
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
(Note 1)
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
LIMIT
UNIT
VDS
-40
V
VGS
±20
V
ID
TA = 25°C
Total Power Dissipation
SYMBOL
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
-22
-9
A
IDM
-88
A
IAS
EAS
-27
109
A
mJ
PD
PD
12.5
2.5
2.2
0.4
W
W
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
10
°C/W
Junction to Ambient Thermal Resistance
RӨJA
57
°C/W
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
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Version: A1611
TSM150P04LCS
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
BVDSS
-40
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = -250µA
VGS(TH)
-1
-1.65
-2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
-1
--
--
-100
--
11
15
--
15
21
gfs
--
29
--
Qg
--
48
--
Qg
--
23
--
Qgs
--
9
--
Qgd
--
8.5
--
Ciss
--
2783
--
Coss
--
269
--
Crss
--
142
--
Rg
2
6
12
td(on)
--
7
--
tr
--
45
--
td(off)
--
67
--
tf
--
59
--
VSD
--
--
-1
V
VGS = 0V, VDS = -40V
Drain-Source Leakage Current
IDSS
VGS = 0V, VDS = -32V
TJ = 125°C
Drain-Source On-State Resistance
VGS = -10V, ID = -9A
(Note 3)
VGS = -4.5V, ID = -8A
Forward Transconductance
Dynamic
(Note 3)
RDS(on)
VDS = -5V, ID = -9A
µA
mΩ
S
(Note 4)
VGS = -10V,
Total Gate Charge
VDS = -20V, ID = 9A
Total Gate Charge
VGS = -4.5V,
Gate-Source Charge
VDS = -20V, ID = -9A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = -20V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 4)
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V, VDS = -20V,
Turn-Off Delay Time
ID = -9A, RG = 2Ω,
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 3)
VGS = 0V, IS = -9A
Reverse Recovery Time
IS = -9A ,
trr
--
19
--
ns
Reverse Recovery Charge
dI/dt = 100A/μs
Qrr
--
11
--
nC
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, VGS = -10V, VDD = -25V, RG = 25Ω, IAS = -27A, Starting TJ = 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM150P04LCS RLG
PACKAGE
PACKING
SOP-8
2,500pcs / 13” Reel
2
Version: A1611
TSM150P04LCS
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
30
VGS=-10V
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-4V
VGS=-3.5V
24
18
-ID, Drain Current (A)
-ID, Drain Current (A)
30
VGS=-3V
12
6
24
18
25℃
12
6
150℃
-55℃
0
0
0
1
2
3
4
0
On-Resistance vs. Drain Current
3
4
Gate-Source Voltage vs. Gate Charge
0.025
0.02
VGS=-4.5V
0.015
0.01
VGS=-10V
0.005
VDS=-20V
ID=-9A
8
6
4
2
0
0
0
6
12
18
24
0
30
10
-ID, Drain Current (A)
VGS=-10V
ID=-9A
1.4
1.2
1
0.8
0.6
-75
-50
-25
0
25
50
75
30
40
50
On-Resistance vs. Gate-Source Voltage
100
125
150
RDS(on), Drain-Source On-Resistance (Ω)
On-Resistance vs. Junction Temperature
1.6
20
Qg, Gate Charge (nC)
1.8
RDS(on), Drain-Source On-Resistance
(Normalized)
2
10
0.03
-VGS, Gate to Source Voltage (V)
RDS(ON), Drain-Source On-Resistance (Ω)
1
-VGS, Gate to Source Voltage (V)
-VDS, Drain to Source Voltage (V)
TJ, Junction Temperature (°C)
0.05
0.04
0.03
0.02
ID=-9A
0.01
0
3
4
5
6
7
8
9
10
-VGS, Gate to Source Voltage (V)
3
Version: A1611
TSM150P04LCS
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
BVDSS (Normalized)
Drain-Source Breakdown Voltage
Capacitance vs. Drain-Source Voltage
4000
C, Capacitance (pF)
3500
3000
CISS
2500
2000
1500
1000
500
COSS
CRSS
0
0
10
20
30
1.2
ID=-1mA
1.1
1
0.9
0.8
40
-75
-50
0
25
50
75
100 125 150
TJ, Junction Temperature (°C)
-VDS, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
-IS, Reverse Drain Current (A)
100
RDS(ON)
-ID, Drain Current (A)
-25
10
1
SINGLE PULSE
RӨJC=10°C/W
TC=25°C
10
150℃
25℃
1
-55℃
0.1
0.1
0.1
1
10
0.2
100
0.4
0.6
0.8
1
1.2
-VSD, Body Diode Forward Voltage (V)
-VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=10°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
0.01
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.1
1
10
t, Square Wave Pulse Duration (sec)
4
Version: A1611
TSM150P04LCS
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
SOP-8
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
150P04L
YML
Y = Year Code
M = Month Code
O =Jan P =Feb
S =May T =Jun
W =Sep X =Oct
L = Lot Code (1~9, A~Z)
Q =Mar
U =Jul
Y =Nov
R =Apr
V =Aug
Z =Dec
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Version: A1611
TSM150P04LCS
Taiwan Semiconductor
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Version: A1611
