TP65H070LDG

TP65H070L Series 650V GaN FET PQFN Series Description Features The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature • • • • AN0003: Printed Circuit Board Layout and Probing AN0007: Recommendations for Vapor Phase Reflow AN0009: Recommended External Circuitry for GaN FETs AN0012: PQFN Tape and Reel Information Ordering Information Part Number Package Package Configuration TP65H070LDG-TR 8 x 8mm PQFN Drain TP65H070LSG-TR 8 x 8mm PQFN Source * “-TR” suffix for tape and reel.Refer to AN0012 for details. TP65H070LSG 8x8 PQFN (bottom view) TP65H070LDG 8x8 PQFN (bottom view) S D S D G G • JEDEC qualified GaN technology • Dynamic RDS(on)eff production tested • Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability • Very low QRR • Reduced crossover loss • RoHS compliant and Halogen-free packaging Benefits • Improves efficiency/operation frequencies over Si • Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost • Easy to drive with commonly-used gate drivers • GSD pin layout improves high speed design Applications • • • • Datacom Broad industrial PV inverter Servo motor Key Specifications VDSS (V) 650 VDSS(TR) (V) 800 RDS(on)eff (mΩ) max* 85 QRR (nC) typ 89 QG (nC) typ 9.3 * Dynamic on-resistance; see Figures 17 and 18 Cascode Schematic Symbol Mar 2, 2021 tp65h070l.3v0 Cascode Device Structure © 2018 Transphorm Inc. Subject to change without notice. 1 TP65H070L Series Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±20 Maximum power dissipation @TC=25°C 96 W Continuous drain current @TC=25°C b 25 A Continuous drain current @TC=100°C b 16 A Pulsed drain current (pulse width: 10µs) 120 A (di/dt)RDMC Reverse diode di/dt, repetitive c 1200 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 2600 A/µs Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C 260 °C Maximum Unit VDSS(TR) VGSS PD ID IDM TC TJ TS TSOLD Operating temperature Storage temperature Reflow soldering temperature e V Notes: a. In off-state, spike duty cycle D