TSM110NB04LCR RLG

TSM110NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 54A, 11mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT VDS 40 V ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested. RDS(on) (max) ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 VGS = 10V 11 VGS = 4.5V 16 mΩ Qg 12 nC APPLICATIONS ● ● ● ● BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) ID TA = 25°C Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 54 12 A IDM 216 A IAS EAS 16 38 A mJ PD PD 68 23 3.1 1 W W TJ, TSTG - 55 to +175 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.2 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is 2 determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: B1804 TSM110NB04LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.9 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 8 11 -- 12 16 gfs -- 34 -- Qg -- 23 -- Qg -- 12 -- Qgs -- 4 -- Qgd -- 6 -- Ciss -- 1269 -- Coss -- 142 -- Crss -- 82 -- Rg 0.5 1.7 3.4 td(on) -- 1 -- tr -- 20 -- td(off) -- 13 -- tf -- 13 -- VSD -- -- 1.2 V VGS = 0V, VDS = 40V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 40V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 12A (Note 3) VGS = 4.5V, ID = 10A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 10V, ID = 12A µA mΩ S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 12A Total Gate Charge VGS = 4.5V, VDS = 20V, Gate-Source Charge ID = 10A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 12A, RG = 2Ω Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 12A Reverse Recovery Time IS = 12A , trr -- 15 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 7 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 16A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM110NB04LCR RLG PDFN56 2,500pcs / 13” Reel 2 Version: B1804 TSM110NB04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 30 30 ID, Drain Current (A) 24 18 ID, Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 12 VGS=3V 6 24 18 12 25℃ -55℃ 6 175℃ 0 0 0 1 2 3 4 0 On-Resistance vs. Drain Current VGS=4.5V 0.012 0.008 VGS=10V 0.004 5 VDS=20V ID=12A 8 6 4 2 0 6 12 18 24 0 30 5 VGS=10V ID=12A 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 15 20 25 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.2 10 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 4 0 0 1.8 3 10 0.016 2 2 Gate-Source Voltage vs. Gate Charge 0.02 VGS, Gate to Source Voltage (V) R DS(on), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) 0.04 0.035 0.03 0.025 0.02 0.015 ID=12A 0.01 0.005 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: B1804 TSM110NB04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1800 C, Capacitance (pF) 1600 1400 CISS 1200 1000 800 600 CRSS 400 COSS 200 1.2 ID=5mA 1.1 1 0.9 0.8 0 0 10 20 30 -75 -50 -25 40 VDS, Drain to Source Voltage (V) 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 RDS(ON) 100 10 SINGLE PULSE RӨJC=2.2°C/W TC=25°C 10 25℃ 175℃ 1 -55℃ 0.1 1 0.1 1 10 0.2 100 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 10 Normalized Effective Transient Thermal Impedance, ZӨJC ID, Drain Current (A) 0 SINGLE PULSE RӨJC=2.2°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: B1804 TSM110NB04LCR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 110NB04L GYWWF G Y WW F 5 TSC 110NB04L GYWWF = Halogen Free = Year Code = Week Code (01~52) = Factory Code Version: B1804 TSM110NB04LCR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B1804