C3M0120065J

C3M0120065J 650 V ID @ 25˚C 21 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology VDS RDS(on) 120 mΩ N-Channel Enhancement Mode Features • • • • • • • Package 3rd Generation SiC MOSFET technology Low inductance package with driver source pin 7mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • • • Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) TAB Drain 1 2 3 G KS S 4 5 S S 6 S Gate (Pin 1) Driver Source (Pin 2) Applications • • • • • Solar inverters DC/DC converters Switch Mode Power Supplies EV battery chargers UPS Drain (TAB) 7 S Power Source (Pin 3,4,5,6,7) Part Number Package Marking C3M0120065J TO-263-7 C3M0120065J Maximum Ratings Symbol VDSS Drain - Source Voltage, TC = 25 ˚C VGS Gate - Source voltage (Under transient events < 100 ns) ID ID(pulse) PD TJ , Tstg TL 1 Parameter Value Unit 650 V -8/+19 V Fig. 28 A Fig. 19 Continuous Drain Current, VGS = 15 V, TC = 25˚C 21 Continuous Drain Current, VGS = 15 V, TC = 100˚C 15 Pulsed Drain Current, Pulse width tP limited by Tjmax 51 A Power Dissipation, TC=25˚C, TJ = 175 ˚C 86 W -40 to +175 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature, 1.6mm (0.063”) from case for 10s C3M0120065J Rev. 1, 01-2021 Note Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS Parameter Drain-Source Breakdown Voltage Min. Typ. Max. 650 Unit V VGSon Gate-Source Recommended Turn-On Voltage 15 V VGSoff Gate-Source Recommended Turn-Off Voltage -4 V VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Drain-Source On-State Resistance 1.8 2.3 3.6 1.9 Test Conditions VGS = 0 V, ID = 100 μA Static V VDS = VGS, ID = 1.86 mA V VDS = VGS, ID = 1.86 mA, TJ = 175ºC 1 50 μA VDS = 650 V, VGS = 0 V 10 250 nA VGS = 15 V, VDS = 0 V 120 157 168 5.0 mΩ VGS = 15 V, ID = 6.76 A VGS = 15 V, ID = 6.76 A, TJ = 175ºC VDS= 20 V, IDS= 6.76 A gfs Transconductance Ciss Input Capacitance 640 VGS = 0 V, VDS = 0V to 400 V Coss Output Capacitance 45 F = 1 Mhz Crss Reverse Transfer Capacitance 2.3 Co(er) Effective Output Capacitance (Energy Related) 57 Co(tr) Effective Output Capacitance (Time Related) 79 Eoss Coss Stored Energy 4.3 EON Turn-On Switching Energy (Body Diode) 28 4.9 EOFF Turn Off Switching Energy (Body Diode) 6 td(on) Turn-On Delay Time 8 Rise Time 9 Turn-Off Delay Time 18 Fall Time 9 Internal Gate Resistance 6 tr td(off) tf RG(int) Qgs Gate to Source Charge 8 Qgd Gate to Drain Charge 7 Qg Total Gate Charge 26 S pF VDS= 20 V, IDS= 6.76 A, TJ = 175ºC C3M0120065J Rev. 1, 01-2021 Fig. 29 Fig. 11 Fig. 4, 5,6 Fig. 7 Fig. 17, 18 VAC = 25 mV VGS = 0 V, VDS = 0V to 400 V Note: 1 Note: 1 μJ VDS = 400 V, F = 1 Mhz Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 6.76 A, RG(ext) = 10 Ω, L= 237 μH, TJ = 175ºC Fig. 25 FWD = Internal Body Diode of MOSFET ns VDD = 400 V, VGS = -4 V/15 V ID = 6.76 A, RG(ext) = 10 Ω Timing relative to VDS Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 6.76 A Per IEC60747-8-4 pg 21 Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V 2 Note Fig. 26 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.5 V VGS = -4 V, ISD = 3.4 A, TJ = 25 °C 4.0 V VGS = -4 V, ISD = 3.4 A, TJ = 175 °C Continuous Diode Forward Current 15 A VGS = -4 V, TC = 25˚C Diode pulse Current 51 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 8 ns Qrr Reverse Recovery Charge 78 nC Irrm Peak Reverse Recovery Current 16 A trr Reverse Recover time 9 ns Qrr Reverse Recovery Charge 41 nC Irrm Peak Reverse Recovery Current 7 A Note Fig. 8, 9, 10 VGS = -4 V, ISD = 6.76 A, VR = 400 V dif/dt = 5470 A/µs, TJ = 175 °C VGS = -4 V, ISD = 6.76 A, VR = 400 V dif/dt = 3650 A/µs, TJ = 175 °C Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 1.73 RθJA Thermal Resistance From Junction to Ambient C3M0120065J Rev. 1, 01-2021 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 40 35 40 VGS = 13V VGS = 11V 30 25 20 15 VGS = 9V 10 5 0 2.0 4.0 6.0 8.0 10.0 30 25 VGS = 9V 20 15 10 VGS = 7V 0 12.0 0.0 2.0 4.0 Figure 1. Output Characteristics TJ = -40 ºC VGS = 11V VGS = 15V 30 VGS = 9V 25 20 15 VGS = 7V 10 5 0 1.4 1.0 0.8 0.6 0.4 0.2 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 300 300 Conditions: VGS = 15 V tp < 200 µs 200 Tj = 175 °C 150 Tj = -40 °C Tj = 25 °C 100 50 0 200 5 10 15 20 25 30 Drain-Source Current, IDS (A) 35 Figure 5. On-Resistance vs. Drain Current For Various Temperatures C3M0120065J Rev. 1, 01-2021 75 100 125 150 175 40 45 VGS = 11 V 150 VGS = 13 V 100 VGS = 15 V 50 0 0 50 Conditions: IDS = 6.8 A tp < 200 µs 250 On Resistance, RDS On (mOhms) 250 25 Junction Temperature, Tj (°C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC On Resistance, RDS On (mOhms) 12.0 1.2 Drain-Source Voltage, VDS (V) 4 10.0 Conditions: IDS = 6.8 A VGS = 15 V tp < 200 µs 1.6 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 35 VGS = 13V 8.0 Figure 2. Output Characteristics TJ = 25 ºC 1.8 Conditions: Tj = 175 °C tp = < 200 µs 6.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) 40 VGS = 11V VGS = 13V 5 VGS = 7V 0.0 VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs 35 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 15V Conditions: Tj = -40 °C tp = < 200 µs -50 -25 0 25 50 75 100 Junction Temperature, Tj (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance -10 Conditions: VDS = 20 V tp < 200 µs 30 TJ = 175 °C TJ = -40 °C TJ = 25 °C 20 -8 -6 10 -4 -2 0 0 -5 VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 40 -10 VGS = 0 V -15 VGS = -2 V -20 -25 -30 0 0 2 4 6 8 10 12 Conditions: Tj = -40°C tp < 200 µs 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -4 Figure 8. Body Diode Characteristic at -40 ºC -2 0 0 -5 VGS = -4 V VGS = 0 V -10 -15 VGS = -2 V -20 -25 -10 -8 -6 -4 -2 0 VGS = 0 V -10 -15 VGS = -2 V -20 -25 -30 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -30 Conditions: Tj = 175°C tp < 200 µs -35 -40 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC 4.0 16 -40 2.5 2.0 1.5 1.0 Conditions: IDS = 6.76 A IGS = 50 mA VDS = 400 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) -35 Figure 10. Body Diode Characteristic at 175 ºC Conditons VGS = VDS IDS = 1.86mA 3.5 0 -5 VGS = -4 V Drain-Source Current, IDS (A) -6 Drain-Source Current, IDS (A) -8 -40 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -10 -35 8 4 0 0.5 0.0 -50 -25 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature 5 C3M0120065J Rev. 1, 01-2021 150 175 -4 0 5 10 15 20 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 25 30 Typical Performance -6 -2 -4 0 0 -5 VGS = 0 V VGS = 5 V -10 -15 -20 VGS = 10 V -25 VGS = 15 V -10 -8 -6 -2 -4 0 VGS = 0 V VGS = 5 V -10 -15 VGS = 10 V -30 Conditions: Tj = 25 °C tp < 200 µs -35 -40 Drain-Source Voltage VDS (V) -8 -6 -4 -2 12 0 10 -10 VGS = 10 V -15 -20 VGS = 15 V -25 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -5 VGS = 5 V Drain-Source Voltage VDS (V) 8 6 4 2 -30 Conditions: Tj = 175 °C tp < 200 µs -35 0 -40 0 100 Figure 15. 3rd Quadrant Characteristic at 175 ºC Ciss 100 200 300 400 500 600 Drain to Source Voltage, VDS (V) 700 Figure 16. Output Capacitor Stored Energy 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Coss 10 Ciss Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Capacitance (pF) Capacitance (pF) 1000 -40 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 VGS = 0 V -35 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -40 ºC -10 100 Coss 10 Crss Crss 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 6 C3M0120065J Rev. 1, 01-2021 -20 -25 VGS = 15 V -30 Conditions: Tj = -40 °C tp < 200 µs 0 -5 Drain-Source Current, IDS (A) -8 Drain-Source Current, IDS (A) -10 200 1 0 100 200 300 400 Drain-Source Voltage, VDS (V) 500 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 650V) 600 Typical Performance 100 Conditions: TJ ≤ 175 °C 20 15 10 5 0 -50 -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Conditions: TJ ≤ 175 °C 90 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 25 80 70 60 50 40 30 20 10 0 175 -50 Figure 19. Continuous Drain Current Derating vs. Case Temperature -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 175 Figure 20. Maximum Power Dissipation Derating Vs Case Temperature 0.5 1 Limited by RDS On 0.3 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 0.1 0.05 100E-3 0.02 0.01 10 µs 100 µs 1.00 1 ms 100 ms 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp SinglePulse 10E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 Figure 21. Transient Thermal Impedance (Junction - Case) 50 50 35 1 10 100 1000 Drain-Source Voltage, VDS (V) Conditions: TJ = 25 °C VDD = 400 V IDS = 6.76 A VGS = -4/+15 V FWD = C3M0120065J L = 237 μH ETotal 40 EOn Switching Loss (uJ) 40 0.1 Figure 22. Safe Operating Area Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 10 Ω VGS = -4/+15 V FWD = C3M0120065J L = 237 μH 45 Switching Loss (uJ) 1 µs 10.00 30 25 20 15 EOff 10 ETotal EOn 30 20 10 EOff 5 0 0 0 2 4 6 8 10 Drain to Source Current, IDS (A) 12 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 7 C3M0120065J Rev. 1, 01-2021 14 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 Figure 24. Clamped Inductive Switching Energy vs. RG(ext) 25 Typical Performance 60 40 Conditions: TJ = 25 °C VDD = 400 V IDS = 6.76 A VGS = -4/+15 V FWD = C3M0120065J 25 Switching Times (ns) 50 Switching Loss (uJ) 30 Conditions: IDS = 6.76 A VDD = 400 V RG(ext) = 10 Ω VGS = -4/+15 V L = 237 μH FWD = C3M0120065J ETotal 30 EOn 20 10 20 td(off) 15 tr td(on) 10 tf 5 EOff 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 175 Figure 25. Clamped Inductive Switching Energy vs. Temperature 8 C3M0120065J Rev. 1, 01-2021 200 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 26. Switching Times vs. RG(ext) 20 25 Q2 RG D.U.T D.U.T C3M0060065D C2M0080120D Test Circuit Schematic Q1 RG LL= = 237 uH 135uH µH L=156 VDC CDC=42.3 uF D.U.T C3M0060065J C3M0120065J D.U.T C2M0080120D VGS = --4V 5V RG Q2 C3M0120065J C3M0060065J C2M0080120D Figure 27. Clamped Inductive Switching Waveform Test Circuit Figure 28. VGS Waveform Example 9 C3M0120065J Rev. 1, 01-2021 Package Dimensions Package 7L D2PAK Dim All Dimensions in Millimeters Min typ Max 4.300 4.435 4.570 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 A b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 D 9.025 9.075 9.125 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e 10 C3M0120065J Rev. 1, 01-2021 1.27 H 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0120065J Rev. 1, 01-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power