TSM2302CX RFG

TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 20 V RDS(on) (max) VGS = 4.5V 65 VGS = 2.5V 95 mΩ Qg 7.8 nC APPLICATIONS ● Load switch ● Backlights SOT-23 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL LIMIT UNIT Drain-Source Voltage PARAMETER VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current (Note 1) TC = 25°C ID TA = 25°C Pulsed Drain Current Total Power Dissipation Total Power Dissipation IDM TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD 3.9 3.2 15.6 1.5 0.3 1 0.2 A A W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 84 °C/W Junction to Ambient Thermal Resistance RӨJA 124 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: E1608 TSM2302CX Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 20 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 0.65 0.9 1.2 V Gate-Source Leakage Current VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 34 65 -- 45 95 gfs -- 19 -- Qg -- 7.8 -- Qg -- 5 -- Qgs -- 1 -- Qgd -- 2.5 -- Ciss -- 587 -- Coss -- 94 -- Crss -- 64 -- Rg -- 1.6 -- td(on) -- 5.4 -- tr -- 26.4 -- td(off) -- 16.4 -- tf -- 15.8 -- VSD -- -- 1.2 V VGS = 0V, VDS = 20V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 20V TJ = 125°C Drain-Source On-State Resistance VGS = 4.5V, ID = 3.2A (Note 2) VGS = 2.5V, ID = 3.2A Forward Transconductance Dynamic (Note 2) RDS(on) VDS = 5V, ID = 3.2A µA mΩ S (Note 3) VGS = 4.5V, VDS = 10V, Total Gate Charge ID = 3.2A Total Gate Charge VGS = 2.5V, VDS = 10V, Gate-Source Charge ID = 3.2A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 10V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain nC pF Ω (Note 3) Turn-On Delay Time Turn-On Rise Time VGS = 4.5V, VDS = 10V, Turn-Off Delay Time ID = 3.2A, RG = 2Ω, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 2) VGS = 0V, IS = 3.2A Reverse Recovery Time IS = 3.2A , trr -- 19 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 8 -- nC Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM2302CX RFG PACKAGE PACKING SOT-23 3,000pcs / 7” Reel 2 Version: E1608 TSM2302CX Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 5 5 ID, Drain Current (A) 3 ID, Drain Current (A) VGS=4.5V VGS=2.5V VGS=2V VGS=1.6V VGS=1.5V VGS=1.4V 4 2 VGS=1.3V 1 4 3 25℃ 2 1 150℃ VGS=1.2V 0 0 0 1 2 3 4 0 1 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 0.05 4.5 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) VGS=2.5V 0.04 VGS=4.5V 0.03 0.02 0.01 0 1 2 3 4 5 4 VDS=10V ID=3.2A 3.5 3 2.5 2 1.5 1 0.5 0 0 2 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) VGS=4.5V ID=3.2A 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 6 8 On-Resistance vs. Gate-Source Voltage 1.6 1.4 4 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 100 125 150 0.08 0.07 0.06 0.05 ID=3.2A 0.04 0.03 0.02 0.01 0 1 2 3 4 5 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 3 Version: E1608 TSM2302CX Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1000 C, Capacitance (pF) 900 800 700 CISS 600 500 400 300 200 COSS 100 CRSS 0 0 1.2 ID=250uA 1.1 1 0.9 0.8 4 8 12 16 -75 20 -50 Maximum Safe Operating Area, Junction-to-Case 0 25 50 75 100 125 150 Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 100 RDS(ON) ID, Drain Current (A) -25 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) 10 100us 1ms 1 10ms 100ms 0.1 SINGLE PULSE RӨJC=84°C/W TC=25°C DC 10 150℃ 25℃ -55℃ 1 0.1 0.01 0.1 1 10 0.2 100 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=84°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.01 0.001 0.0001 0.001 0.01 0.1 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 1 10 t, Square Wave Pulse Duration (sec) 4 Version: E1608 TSM2302CX Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 2 = Device Code Y = Year Code M = Month Code O =Jan P =Feb S =May T =Jun W =Sep X =Oct L = Lot Code Q =Mar U =Jul Y =Nov R =Apr V =Aug Z =Dec 5 Version: E1608 TSM2302CX Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: E1608