TSM080NB03CR RLG

TSM080NB03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 59A, 8mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● 175°C Operating Junction Temperature ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 8 (max) VGS = 4.5V 15 mΩ Qg 10 nC APPLICATIONS ● DC-DC Converter ● Battery Management ● Load Switch ● Motor Drive PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) ID TA = 25°C Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 59 14 A IDM 236 A IAS EAS 17 43 A mJ PD PD 55.6 18.5 3.1 1 W W TJ, TSTG - 55 to +175 °C THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance RӨJC 2.7 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is 2 determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: A1910 TSM080NB03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.8 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 5.8 8 -- 10 15 gfs -- 36 -- Qg -- 20 -- Qg -- 10 -- Qgs -- 4 -- Qgd -- 5 -- Ciss -- 1097 -- Coss -- 180 -- Crss -- 106 -- Rg 0.8 2.5 5 td(on) -- 5 -- tr -- 22 -- td(off) -- 14 -- tf -- 5 -- VSD -- -- 1 V VGS = 0V, VDS = 30V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 30V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 14A (Note 3) VGS = 4.5V, ID = 10A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 10V, ID = 14A µA mΩ S (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 14A Total Gate Charge VGS = 4.5V, VDS = 15V, Gate-Source Charge ID = 10A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 15V, Turn-Off Delay Time ID = 14A, RG = 2Ω Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 14A Reverse Recovery Time IS = 14A, trr -- 16 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 8 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 17A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE TSM080NB03CR RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 2 Version: A1910 TSM080NB03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 30 ID, Drain Current (A) ID, Drain Current (A) 40 20 VGS=3V 10 30 20 25℃ 10 -55℃ 175℃ 0 0 0 1 2 3 4 0 1 On-Resistance vs. Drain Current 4 5 Gate-Source Voltage vs. Gate Charge 0.014 0.012 VGS=4.5V 0.01 0.008 0.006 VGS=10V 0.004 0.002 VDS=15V ID=14A 8 6 4 2 0 0 0 10 20 30 0 40 5 ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=14A 1.6 1.4 1.2 1 0.8 0.6 0 25 50 15 20 On-Resistance vs. Gate-Source Voltage 2 -75 -50 -25 10 Qg, Gate Charge (nC) On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Normalized) 3 10 0.016 1.8 2 VGS, Gate to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) VDS, Drain to Source Voltage (V) 75 100 125 150 175 0.03 0.025 0.02 0.015 0.01 ID=14A 0.005 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 3 Version: A1910 TSM080NB03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1600 C, Capacitance (pF) 1400 1200 CISS 1000 800 600 400 COSS 200 CRSS 0 0 10 1.2 ID=5mA 1.1 1 0.9 0.8 20 30 -75 -50 -25 VDS, Drain to Source Voltage (V) 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 ID, Drain Current (A) 0 RDS(ON) 100 10 SINGLE PULSE RӨJC=2.7°C/W TC=25°C 10 175℃ 25℃ 1 -55℃ 0.1 1 0.1 1 10 0.2 100 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2.7°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: A1910 TSM080NB03CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 080NB03 YWWLF Y WW L F = Year Code = Week Code (01~52) = Lot Code (1~9,A~Z) = Factory Code 5 Version: A1910 TSM080NB03CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1910