TSM60N06CP ROG

TSM60N06 60V N-Channel Power MOSFET TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source ● ● ● ● RDS(on)(mΩ) ID (A) 60 7.3 @ VGS =10V 66 Block Diagram Advanced Trench Technology Low RDS(ON) 7.3mΩ (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information en de d Features VDS (V) Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel mm Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Gate-Source Voltage eco Drain-Source Voltage Symbol Limit Unit VDS 60 V VGS ±20 V TC = 25℃ No tR Continuous Drain Current TC = 70℃ TA = 25℃ ID TA = 70℃ Drain Current-Pulsed Note 1 Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Maximum Power Dissipation 66 A IDM 150 A IAS, IAR 53 A 400 mJ EAS, EAR TA = 25℃ 13 10 TC = 25℃ TC = 70℃ 53 44.6 PD TA = 70℃ 28.6 2 W 1.3 TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 2.8 ℃/W Thermal Resistance - Junction to Ambient RӨJA 62 ℃/W Storage Temperature Range Operating Junction Temperature Range * Limited by maximum junction temperature Thermal Performance Parameter 1/4 Version: A12 TSM60N06 60V N-Channel Power MOSFET Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static VGS = 0V, ID = 250uA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 6.3 7.3 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Dynamic VDS = 30V, ID = 30A, Gate-Source Charge VGS = 10V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 30V, VGS = 0V, f = 1.0MHz Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time RG = 3.3Ω, ID = 30A Turn-Off Fall Time e co Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward VGS = 0V, IS = 20A Voltage Reverse Recovery Time 81 IS = 30A, TJ = 25 ℃ dI/dt = 100A/us -- Qgs -- 23 -- Qgd -- 24 -- Ciss -- 4382 -- Coss -- 668 -- Crss -- 339 -- td(on) -- 25 -- tr -- 19 -- td(off) -- 85 -- tf -- 43 -- VSD - 0.8 1.3 mm Switching Turn-On Delay Time -- en Gate-Drain Charge Qg de Total Gate Charge d Drain-Source Breakdown Voltage tfr 36 nC pF nS V nS No tR Reverse Recovery Charge Qfr 53 nC Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 2/4 Version: A12 TSM60N06 60V N-Channel Power MOSFET TO-252 Mechanical Drawing No tR e co mm en de A B C D E F G G1 H H1 J K L M d DIM TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.286 BSC 0.090 BSC 0.370 0.409 9.40 10.40 0.213 0.245 5.40 6.23 0.252 0.268 6.40 6.80 0.087 0.094 2.20 2.40 0.000 0.008 0.00 0.20 0.205 0.217 5.20 5.50 0.020 0.036 0.50 0.91 0.018 0.024 0.45 0.60 0.016 0.024 0.40 0.60 0.098 0.114 2.50 2.90 0.023 0.039 0.60 1.00 0.055 0.070 1.40 1.78 0.034 0.050 0.88 1.28 3/4 Version: A12 TSM60N06 No tR e co mm en de d 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12