TSM060N03PQ33
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 62A, 6mΩ
FEATURES
PRODUCT SUMMARY
● Low RDS(ON) to minimize conductive Loss
PARAMETER
VALUE
UNIT
VDS
30
V
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS Directive 2011/65/EU and in
RDS(on) (max)
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 definition
VGS = 10V
6
VGS = 4.5V
9
Qg
mΩ
12.9
nC
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● Oring FET/Load Switch
PDFN33
Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
TA = 25°C
(Note 1)
ID
62
15
A
IDM
248
A
Single Pulse Avalanche Current
(Note 2)
IAS
29
A
Single Pulse Avalanche Energy
(Note 2)
EAS
42
mJ
Total Power Dissipation
Total Power Dissipation
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
PD
PD
40
8
2.3
0.5
W
W
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Thermal Resistance – Junction to Case
RӨJC
3.1
°C/W
Thermal Resistance – Junction to Ambient
RӨJA
53
°C/W
THERMAL RESISTANCE
PARAMETER
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design.
1
Version: C1608
TSM060N03PQ33
Taiwan Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1.2
1.6
2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VGS = 0V, VDS = 30V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 15A
--
4.8
6
(Note 3)
VGS = 4.5V, ID = 15A
--
6.7
9
gfs
--
38
--
Qg
--
25.4
--
Forward Transconductance
Dynamic
(Note 3)
RDS(on)
VDS = 5V, ID = 15A
mΩ
S
(Note 4)
VGS = 10V, VDS = 15V,
Total Gate Charge
ID = 15A
Total Gate Charge
Qg
VGS = 4.5V, VDS = 15V,
Gate-Source Charge
ID = 15A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = 15V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz, open drain
12.9
nC
Qgs
--
3.8
--
Qgd
--
5.7
--
Ciss
--
1342
--
Coss
--
227
--
Crss
--
169
--
Rg
0.8
2.7
5.4
td(on)
--
7.5
--
tr
--
14.5
--
td(off)
--
35.2
--
tf
--
9.6
--
VSD
--
--
1
V
pF
Ω
(Note 4)
Turn-On Delay Time
Rise Time
VGS = 10V, VDS = 15V,
Turn-Off Delay Time
ID = 15A, RG = 3.3Ω,
Fall Time
ns
Source-Drain Diode
Diode Forward Voltage
(Note 3)
VGS = 0V, IS = 15A
Reverse Recovery Time
IS = 15A,
trr
--
8.8
--
ns
Reverse Recovery Charge
di/dt = 100A/μs
Qrr
--
26
--
nC
Notes:
1. Current limited by package.
2. L = 0.1mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 29A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM060N03PQ33 RGG
PACKAGE
PACKING
PDFN33
5,000pcs / 13” Reel
2
Version: C1608
TSM060N03PQ33
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
On-Resistance vs. Junction Temperature
Normalized Gate Threshold
1.2
1
0.8
0.6
0.4
-75
-50
-25
0
25
50
75
100 125 150
RDS(on), Drain-Source On-Resistance
(Normalized)
Normalized Vth vs. TJ
2
VGS=10V
ID=15A
1.8
1.6
1.4
1.2
1
0.8
0.6
-75
Capacitance vs. Drain-Source Voltage
0
25
50
75
100 125 150
VGS, Gate to Source Voltage (V)
10
1800
1600
C, Capacitance (pF)
-25
Gate-Source Voltage vs. Gate Charge
2000
CISS
1400
1200
1000
800
600
400
COSS
200
CRSS
0
0
5
10
15
VDS=15V
ID=15A
8
6
4
2
0
20
25
30
0
VDS, Drain to Source Voltage (V)
5
10
15
20
25
30
Qg, Gate Charge (nC)
Normalized Thermal Transient Impedance, Junctionto-Case
Maximum Safe Operating Area, Junction-to-Case
1000
10
SINGLE PULSE
RӨJC=3.1°C/W
ID, Drain Current (A)
Normalized Effective Transient
Thermal Impedance
-50
TJ, Junction Temperature (°C)
TJ, Junction Temperature (℃)
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.001
0.00001
RDS(ON)
100
10
SINGLE PULSE
RӨJC=3.1°C/W
TC=25°C
1
0.0001
0.001
0.01
0.1
0.1
1
10
100
VDS, Drain to Source Voltage (V)
t, Square Wave Pulse Duration (sec)
3
Version: C1608
TSM060N03PQ33
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN33
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
4
Version: C1608
TSM060N03PQ33
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version: C1608
