TSM038N04LCP
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 135A, 3.8mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
VDS
40
V
RDS(on) (max)
VGS = 10V
3.8
VGS = 4.5V
5
mΩ
Qg
53
nC
APPLICATIONS
●
●
●
●
BLDC Motor Control
Battery Power Management
DC-DC converter
Secondary Synchronous Rectification
TO-252 (DPAK)
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C
(Note 1)
ID
TA = 25°C
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
Total Power Dissipation
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
135
19
A
IDM
540
A
IAS
EAS
38
217
A
mJ
PD
PD
125
25
2.6
0.5
W
W
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1
°C/W
Junction to Ambient Thermal Resistance
RӨJA
49
°C/W
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: A1701
TSM038N04LCP
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
40
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1.2
1.5
2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
1
--
--
100
--
2.8
3.8
--
3.4
5
gfs
--
55
--
Qg
--
104
--
Qg
--
53
--
Qgs
--
14
--
Qgd
--
23
--
Ciss
--
5509
--
Coss
--
548
--
Crss
--
332
--
Rg
0.4
1.3
2.6
td(on)
--
8
--
tr
--
21
--
td(off)
--
57
--
tf
--
35
--
VSD
--
--
1
V
VGS = 0V, VDS = 40V
Drain-Source Leakage Current
IDSS
VGS = 0V, VDS = 40V
TJ = 125°C
Drain-Source On-State Resistance
VGS = 10V, ID = 19A
(Note 3)
VGS = 4.5V, ID = 17A
Forward Transconductance
Dynamic
(Note 3)
RDS(on)
VDS = 5V, ID = 19A
µA
mΩ
S
(Note 4)
VGS = 10V, VDS = 20V,
Total Gate Charge
ID = 19A
Total Gate Charge
VGS = 4.5V, VDS = 20V,
Gate-Source Charge
ID = 17A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = 20V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 4)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 20V,
Turn-Off Delay Time
ID = 19A, RG = 2Ω,
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 3)
VGS = 0V, IS = 19A
Reverse Recovery Time
IS = 19A ,
trr
--
37
--
ns
Reverse Recovery Charge
dI/dt = 100A/μs
Qrr
--
27
--
nC
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 38A, Starting TJ = 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM038N04LCP ROG
PACKAGE
PACKING
TO-252 (DPAK)
2,500pcs / 13” Reel
2
Version: A1701
TSM038N04LCP
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
40
40
ID, Drain Current (A)
32
24
ID, Drain Current (A)
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=4V
VGS=3.5V
VGS=3V
16
VGS=2.5V
8
32
24
16
25℃
8
-55℃
150℃
0
0
0
1
2
3
4
0
1
3
4
Gate-Source Voltage vs. Gate Charge
10
VGS, Gate to Source Voltage (V)
RDS(ON), Drain-Source On-Resistance (Ω)
On-Resistance vs. Drain Current
0.006
0.005
0.004
VGS=4.5V
0.003
VGS=10V
0.002
0.001
0
VDS=20V
ID=19A
8
6
4
2
0
0
8
16
24
32
40
0
20
On-Resistance vs. Junction Temperature
RDS(on), Drain-Source On-Resistance (Ω)
VGS=10V
ID=19A
1.6
1.4
1.2
1
0.8
0.6
-75
-50
-25
0
25
50
75
60
80
100
120
On-Resistance vs. Gate-Source Voltage
2
1.8
40
Qg, Gate Charge (nC)
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
2
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
100 125 150
TJ, Junction Temperature (°C)
0.01
0.008
0.006
0.004
0.002
ID=19A
0
2
3
4
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
3
Version: A1701
TSM038N04LCP
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
BVDSS (Normalized)
Drain-Source Breakdown Voltage
Capacitance vs. Drain-Source Voltage
8000
C, Capacitance (pF)
7000
6000
CISS
5000
4000
3000
2000
1000
COSS
CRSS
0
0
1.2
ID=1mA
1.1
1
0.9
0.8
10
20
30
40
-75
VDS, Drain to Source Voltage (V)
-25
0
25
50
75
100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
1000
IS, Reverse Drain Current (A)
100
RDS(ON)
ID, Drain Current (A)
-50
100
10
SINGLE PULSE
RӨJC=1°C/W
TC=25°C
1
10
150℃
1
-55℃
25℃
0.1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=1°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.1
t, Square Wave Pulse Duration (sec)
4
Version: A1701
TSM038N04LCP
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252 (DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
038N04L
YML
Y = Year Code
M = Month Code
O =Jan
P =Feb
S =May
T =Jun
W =Sep
X =Oct
L = Lot Code (1~9, A~Z)
Q =Mar
U =Jul
Y =Nov
5
R =Apr
V =Aug
Z =Dec
Version: A1701
TSM038N04LCP
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: A1701
