TSM10NC65CF C0G

TSM10NC65CF Taiwan Semiconductor N-Channel Power MOSFET 650V, 10A, 0.9Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 650 V RDS(on) (max) 0.9 Ω Qg 34 nC APPLICATIONS ● AC/DC LED Lighting ● Power Supply ITO-220S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) 10 6.3 A IDM 30 A PDTOT 45 W Single Pulse Avalanche Energy (Note 3) EAS 372 mJ Single Pulse Avalanche Current (Note 3) IAS 6.1 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 2.8 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 1 Version: A1605 TSM10NC65CF Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 650 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.4 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 µA VGS = 10V, ID = 2A RDS(on) -- 0.75 0.9 Ω VDS = 10V, ID = 4A gfs -- 6 -- S Qg -- 34 -- Qgs -- 11 -- Qgd -- 13 -- Ciss -- 1650 -- Coss -- 91 -- pF Ω Drain-Source On-State Resistance (Note 4) Forward Transconductance Dynamic (Note 4) (Note 5) Total Gate Charge VDS = 520V, ID = 4A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 50V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching Crss f = 1.0MHz, open drain nC 11 Rg 0.6 2.1 4.2 td(on) -- 14 -- tr -- 9 -- td(off) -- 32 -- tf -- 15 -- VSD -- -- 1.4 V (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 325V, RG = 5Ω, Turn-Off Delay Time ID = 4A, VGS = 10V Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 4) IS = 4A, VGS = 0V Reverse Recovery Time IS = 4A trr -- 307 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 4.1 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 6.1A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. PACKAGE PACKING TSM10NC65CF C0G ITO-220S 50pcs / Tube 2 Version: A1605 TSM10NC65CF Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Transfer Characteristics 10 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics 10 VGS=10V VGS=9V VGS=8V VGS=7V 8 VGS=6V 6 4 2 VGS=5V 0 8 6 25℃ 4 2 150℃ 0 2 4 6 8 10 0 On-Resistance vs. Drain Current 4 6 8 10 Gate-Source Voltage vs. Gate Charge 10 1 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) VGS=10V 0.8 0.6 0.4 VDS=520V ID=4A 8 6 4 2 0 0.2 0 2 4 6 8 0 10 5 10 3 VGS=10V ID=2A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 20 25 30 35 100 125 150 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.5 15 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0 TJ, Junction Temperature (°C) 1 0.8 ID=2A 0.6 0.4 0.2 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: A1605 TSM10NC65CF Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 3000 2500 2000 CISS 1500 1000 500 COSS CRSS 0 0.1 1.2 ID=1mA 1.1 1 0.9 0.8 1 10 100 -75 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 100 RDS(ON) ID, Drain Current (A) -50 10 1 0.1 SINGLE PULSE RӨJC=2.8°C/W TC=25°C 10 150℃ 25℃ -55℃ 1 0.1 0.01 1 10 100 0.2 1000 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2.8°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 10 t, Square Wave Pulse Duration (sec) 4 Version: A1605 TSM10NC65CF Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220S MARKING DIAGRAM TSC 10NC65 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1605 TSM10NC65CF Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1605