C3M0016120K

C3M0016120K VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 115 A 16 mΩ N-Channel Enhancement Mode Features • • • • • • • Package 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant TAB Drain Benefits • • • • • Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency 1 D 2 3 4 S S G Gate (Pin 4) Driver Source (Pin 3) Applications • • • • • Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch Power Source (Pin 2) Part Number Package Marking C3M0016120K TO 247-4 C3M0016120K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2 ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 115 85 A VGS = 15 V, TC = 25˚C VGS = 15 V, TC = 100˚C Pulsed Drain Current 250 A Pulse width tP limited by Tjmax Power Dissipation 556 W TC=25˚C, TJ = 175 ˚C -40 to +175 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0016120K Rev. -, 04-2019 1.6mm (0.063”) from case for 10s Fig. 19 Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 1200 1.8 2.5 3.6 2.0 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 23 mA V VDS = VGS, ID = 23 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 16 22.3 RDS(on) Drain-Source On-State Resistance 11.2 28.8 53 gfs Transconductance Ciss Input Capacitance 6085 Coss Output Capacitance 230 Crss Reverse Transfer Capacitance 13 Eoss Coss Stored Energy 130 EON Turn-On Switching Energy (SiC Diode FWD) 1.1 EOFF Turn Off Switching Energy (SiC Diode FWD) 0.8 EON Turn-On Switching Energy (Body Diode FWD) 2.3 EOFF Turn Off Switching Energy (Body Diode FWD) 0.6 td(on) Turn-On Delay Time 34 Rise Time 33 Turn-Off Delay Time 65 Fall Time 13 Internal Gate Resistance 2.6 tr td(off) tf RG(int) 2 Parameter V(BR)DSS 47 Qgs Gate to Source Charge 67 Qgd Gate to Drain Charge 61 Qg Total Gate Charge 211 C3M0016120K Rev. -, 04-2019 mΩ S pF VGS = 15 V, ID = 75 A VGS = 15 V, ID = 75 A, TJ = 175ºC VDS= 20 V, IDS= 75 A VDS= 20 V, IDS= 75 A, TJ = 175ºC VGS = 0 V, VDS = 1000 V f = 1 MHz Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VAC = 25 mV μJ Fig. 16 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, Fig. 26 RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, Fig. 26 RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7 Timing relative to VDS, Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 75 A Per IEC60747-8-4 pg 21 Fig. 27 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.6 V VGS = -4 V, ISD = 37.5 A, TJ = 25 °C 4.2 V VGS = -4 V, ISD = 37.5 A, TJ = 175 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 112 A VGS = -4 V, TC = 25˚C Note 1 Diode pulse Current 250 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 75 A, VR = 800 V dif/dt = 4000 A/µs, TJ = 175 °C Note 1 VGS = -4 V, ISD = 75 A, VR = 800 V dif/dt = 5500 A/µs, TJ = 175 °C Note 1 trr Reverse Recover time 30 ns Qrr Reverse Recovery Charge 1238 nC Irrm Peak Reverse Recovery Current 64 A trr Reverse Recover time 27 ns Qrr Reverse Recovery Charge 1261 nC Irrm Peak Reverse Recovery Current 77 A Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.27 RθJA Thermal Resistance From Junction to Ambient C3M0016120K Rev. -, 04-2019 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 250 Conditions: TJ = -40 °C tp = < 200 µs 250 VGS = 15V VGS = 13V VGS = 13V VGS = 11V 200 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 200 VGS = 15V Conditions: TJ = 25 °C tp = < 200 µs VGS = 11V 150 VGS = 9V 100 50 VGS = 9V 150 100 VGS = 7V 50 VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Figure 1. Output Characteristics TJ = -40 ºC 2.0 Conditions: TJ = 175 °C tp = < 200 µs VGS = 15V Drain-Source Current, IDS (A) 10.0 12.0 Conditions: IDS = 75 A VGS = 15 V tp < 200 µs 1.8 VGS = 13V 200 8.0 Figure 2. Output Characteristics TJ = 25 ºC 1.6 VGS = 11V VGS = 9V On Resistance, RDS On (P.U.) 250 6.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) 150 VGS = 7V 100 50 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -40 -20 0 20 Drain-Source Voltage, VDS (V) TJ = 175 °C 35 30 25 20 TJ = 25 °C 15 TJ = -40 °C 10 5 0 0 50 100 150 200 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 4 C3M0016120K Rev. -, 04-2019 250 80 100 120 140 160 180 Conditions: IDS = 75 A tp < 200 µs 35 On Resistance, RDS On (mOhms) 40 On Resistance, RDS On (mOhms) 40 Conditions: VGS = 15 V tp < 200 µs 45 60 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC 50 40 Junction Temperature, TJ (°C) 300 30 VGS = 11 V 25 VGS = 13 V 20 VGS = 15 V 15 10 5 0 -40 -20 0 20 40 60 80 100 120 Junction Temperature, TJ (°C) 140 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 160 180 Typical Performance -10 Conditions: VDS = 20 V tp < 200 µs 200 150 TJ = -40 °C TJ = 175 °C 100 TJ = 25 °C 50 0 0 2 4 6 8 10 -8 -6 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 250 -4 -100 -150 -200 Conditions: TJ = -40°C tp < 200 µs 12 -250 Figure 8. Body Diode Characteristic at -40 ºC -2 0 VGS = -4 V 0 -50 VGS = 0 V -100 VGS = -2 V -150 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -10 -8 -4 -2 0 0 -50 VGS = 0 V -100 VGS = -2 V -150 -200 Conditions: TJ = 175°C tp < 200 µs -250 Drain-Source Voltage VDS (V) -200 -250 Figure 10. Body Diode Characteristic at 175 ºC 16 Conditons VGS = VDS IDS = 23 mA 3.5 -6 VGS = -4 V Figure 9. Body Diode Characteristic at 25 ºC Conditions: IDS = 20 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) -50 Drain-Source Voltage VDS (V) 4.0 0 VGS = -2 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -6 0 VGS = 0 V Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -2 VGS = -4 V Gate-Source Voltage, VGS (V) -10 -4 2.5 2.0 1.5 1.0 8 4 0 0.5 0.0 -40 -20 0 20 40 60 80 100 Junction Temperature TJ (°C) 120 140 Figure 11. Threshold Voltage vs. Temperature 5 C3M0016120K Rev. -, 04-2019 160 180 -4 0 50 100 150 200 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 250 Typical Performance -6 -4 -2 0 0 -50 VGS = 0 V VGS = 5 V -100 VGS = 10 V VGS = 15 V -150 -10 -8 VGS = 5 V VGS = 10 V VGS = 15 V Conditions: TJ = 25 °C tp < 200 µs Drain-Source Voltage VDS (V) -2 0 -150 -200 -250 200 0 -50 VGS = 5 V VGS = 10 V -100 VGS = 15 V -150 180 140 120 100 80 60 40 Drain-Source Voltage VDS (V) -200 20 0 -250 0 200 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 Ciss 1000 Coss Crss 10 10000 50 100 150 Drain-Source Voltage, VDS (V) Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) C3M0016120K Rev. -, 04-2019 800 Ciss 1000 1200 200 Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz 1000 Coss 100 Crss 10 0 600 100000 Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz 100 1 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Capacitance (pF) 100000 Capacitance (pF) -100 160 VGS = 0 V Conditions: TJ = 175 °C tp < 200 µs 6 0 Figure 14. 3rd Quadrant Characteristic at 25 ºC Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -4 0 VGS = 0 V Figure 13. 3rd Quadrant Characteristic at -40 ºC -6 -2 -50 -250 Drain-Source Voltage VDS (V) -8 -4 -200 Conditions: TJ = -40 °C tp < 200 µs -10 -6 Drain-Source Current, IDS (A) -8 Drain-Source Current, IDS (A) -10 1 0 200 400 600 800 Drain-Source Voltage, VDS (V) 1000 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1200V) 1200 Typical Performance 600 Conditions: TJ ≤ 175 °C 100 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 120 80 60 40 20 0 -55 -30 -5 20 45 70 95 Case Temperature, TC (°C) 120 145 Conditions: TJ ≤ 175 °C 500 400 300 200 100 0 170 -55 -5 45 70 95 120 Case Temperature, TC (°C) 145 170 1 100.00 0.5 100E-3 0.3 0.1 0.05 10E-3 0.02 0.01 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 ms 100 ms 1.00 0.10 1 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 Figure 21. Transient Thermal Impedance (Junction - Case) 2.0 Switching Loss (mJ) 4.0 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0016120K L = 57.6 μH 3.0 1.5 EOn 1.0 0.0 EOff 0 20 40 60 80 Drain to Source Current, IDS (A) 100 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) C3M0016120K Rev. -, 04-2019 100 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0075120D L = 57.6 μH 3.5 ETotal 0.5 10 1000 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Switching Loss (mJ) 2.5 10 µs 10.00 0.01 1E-6 Limited by RDS On 100 µs SinglePulse 1E-3 7 20 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature -30 2.5 ETotal EOn 2.0 1.5 1.0 EOff 0.5 120 0.0 0 20 40 60 80 100 Drain to Source Current, IDS (A) 120 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 140 Typical Performance 6.0 Switching Loss (mJ) 4.0 Conditions: TJ = 25 °C VDD = 800 V IDS = 75 A VGS = -4V/+15 V FWD = C3M0016120K L = 65.7 μH Conditions: IDS = 75 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0016120K FWD = C4D20120A L = 65.7 μH 3.5 ETotal 3.0 Switching Loss (mJ) 8.0 EOn 4.0 2.0 EOff 2.5 ETotal EOn 2.0 ETotal with diode 1.5 EOn with diode 1.0 EOff with diode EOff 0.5 0.0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 Switching Times (ns) 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 Conditions: TJ = 25 °C VDD = 800 V IDS = 75 A VGS = -4V/+15 V FWD = C3M0016120K L = 65.7 μH 200 td(off) td(on) 100 tr tf 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 8 C3M0016120K Rev. -, 04-2019 20 175 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 300 0.0 25 Figure 28. Switching Times Definition 200 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 9 C3M0016120K Rev. -, 04-2019 Package Dimensions Package TO-247-4L E E1 E4 E2 E3 BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE 10 C3M0016120K Rev. -, 04-2019 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. SYM A A1 A2 b' b b1 b2 b3 b4 b5 b6 c' c D D1 D2 E MILLIMETERS MIN 4.83 2.29 1.91 1.07 1.07 2.39 2.39 1.07 1.07 2.39 2.39 0.55 0.55 23.30 16.25 0.95 15.75 MAX 5.21 2.54 2.16 1.28 1.33 2.94 2.84 1.60 1.50 2.69 2.64 0.65 0.68 23.60 17.65 1.25 16.13 SYM E1 E2 E3 E4 e e1 N L L1 L2 øP Q S T W X MILLIMETERS MIN MAX 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43 2.54 BSC 5.08 BSC 4 17.31 17.82 3.97 4.37 2.35 2.65 3.51 3.65 5.49 6.00 6.04 6.30 17.5° REF. 3.5 ° REF. 4 ° REF. Recommended Solder Pad Layout 11 C3M0016120K Rev. -, 04-2019 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 12 C3M0016120K Rev. - , 04-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power