TSM7P06CP
60V P-Channel Power MOSFET
TO-252
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
-60
V
RDS(on) (max)
VGS = -10V
180
VGS = -4.5V
220
Qg
8.2
nC
Block Diagram
Ordering Information
Ordering code
mΩ
Package
Packing
TSM7P06CP ROG
TO-252
2.5kpcs / 13” Reel
Note: Halogen-free according to IEC 61249-2-21 definition
P-Channel MOSFET
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
-7
A
-4.4
A
Parameter
TC = 25ºC
Continuous Drain Current
ID
TC = 100ºC
(Note 1)
IDM
-28
A
Single Pulse Avalanche Energy
(Note 2)
EAS
32
mJ
Single Pulse Avalanche Current
(Note 1)
IAS
-8
A
Power Dissipation @ TC = 25 C
PD
15.6
W
Operating Junction Temperature
TJ
150
ºC
TSTG
-50 to +150
Symbol
Limit
Thermal Resistance - Junction to Case
RӨJC
8
Thermal Resistance - Junction to Ambient
RӨJA
62
Pulsed Drain Current
o
Storage Temperature Range
o
C
Thermal Performance
Parameter
1/5
Unit
o
C/W
Version: B1802
TSM7P06CP
60V P-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
-60
--
--
V
--
153
180
--
198
220
-1.2
-1.6
-2.5
--
--
-1
--
--
-10
IGSS
--
--
±100
nA
gfs
--
3
--
S
Qg
--
8.2
--
Qgs
--
1.8
--
Qgd
--
1.5
--
Ciss
--
425
--
Coss
--
35
--
Crss
--
20
--
td(on)
--
5.2
--
tr
--
19
--
td(off)
--
35
--
tf
--
10.6
--
IS
--
--
-7
A
ISM
--
--
-28
A
VSD
--
--
-1
V
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = -250µA
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -1.5A
VDS = VGS, ID = -250µA
RDS(ON)
VGS(TH)
VDS = -60V, VGS = 0V
Zero Gate Voltage Drain Current
VDS = -48V, VGS = 0V,
IDSS
TC = 125ºC
Gate Body Leakage
VGS = ±20V, VDS = 0V
Forward Transconductance
(Note 3)
VDS = -10V, ID = -2A
mΩ
V
µA
Dynamic
(Note 3,4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = -30V, ID = -3A,
VGS = -10V
Input Capacitance
VDS = -30V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 3,4)
(Note 3,4)
VDD = -30V, ID = -1A,
RGEN =6Ω
(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
Maximum Pulse Drain-Source Diode
the MOSFET
Forward Current
Diode-Source Forward Voltage
VGS = 0V, IS = -1A
Note:
1. Pulse width limited by safe operating area
2.
L=1mH, IAS =-8A, VDD = -25V, RG = 25Ω, Starting TJ = 25ºC
3. Pulse test: pulse width ≤300µs, duty cycle ≤2%
4. Switching time is essentially independent of operating temperature.
2/5
Version: B1802
TSM7P06CP
60V P-Channel Power MOSFET
Electrical Characteristics Curve
Normalized Rds(on) vs. Tj
Normalized On Resistance
-ID , Continuous Drain Current (A)
Continuous Drain Current vs. Tc
TJ , Junction Temperature (ºC)
Normalized Vth vs. Tj
Gate Charge Waveform
-VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
TC , Case Temperature (ºC)
Qg , Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
-ID , Drain Current (A)
Normalized Thermal Response
TJ , Junction Temperature (ºC)
Square Wave Pulse Duration (s)
-VDS , Drain to Source Voltage (V)
3/5
Version: B1802
TSM7P06CP
60V P-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
SUGGESTED PAD LAYOUT (Unit: Millimeters)
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: B1802
TSM7P06CP
60V P-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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5/5
Version: B1802