TSM80N08CZ C0G

TSM80N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.) ● Low Crss typical @ 203pF (Typ.) en de d Features VDS (V) Ordering Information Part No. Package Packing TSM80N08CZ C0G TO-220 50pcs / Tube mm Note: “G” denotes for Halogen Free N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Gate-Source Voltage eco Drain-Source Voltage No tR Continuous Drain Current TC=25°C TC=70°C TA=25°C TA=70°C Symbol Limit Unit VDS 75 V VGS ±25 80 60 12 9 320 V 35 183 113.6 72.7 2 1.3 A mJ TSTG TJ -55 to +150 -55 to +150 °C °C Symbol Limit Unit RӨJC RӨJA 1.1 62.5 °C/W °C/W ID Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH IAS EAS Maximum Power Dissipation TC=25°C TC=70°C TA=25°C TA=70°C Storage Temperature Range Operating Junction Temperature Range PD A A W * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Document Number: DS_P0000146 1 Version: C15 TSM80N08 75V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static VGS = 0V, ID = 250uA BVDSS 75 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 40A RDS(ON) -- 6 8 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±25V, VDS = 0V IGSS -- -- ±100 nA Dynamic VDS = 30V, ID = 40A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance f = 1.0MHz Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time ID = 1A, RG = 3.3Ω Turn-Off Fall Time e co Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward VGS=0V, IS=20A Voltage Reverse Recovery Time -- -- 34 -- Qgd -- 19.9 -- Ciss -- 3905 -- Coss -- 371 -- Crss -- 203 -- td(on) -- 21.5 -- tr -- 11 -- td(off) -- 73 -- tf -- 66 -- VSD - 0.8 1.3 nC pF nS V IS = 40A, TJ=25 °C tfr 36 nS dI/dt = 100A/us Qfr 45 nC tR Reverse Recovery Charge 91.5 Qgs mm Switching Turn-On Delay Time -- en VDS = 30V, VGS = 0V, Output Capacitance Qg de Total Gate Charge d Drain-Source Breakdown Voltage No Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air Document Number: DS_P0000146 2 Version: C15 TSM80N08 75V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Gate Threshold Voltage en de d Output Characteristics Drain-Source On Resistance tR e co mm Gate Source On Resistance Source-Drain Diode Forward Voltage No Drain-Source On-Resistance Document Number: DS_P0000146 3 Version: C15 TSM80N08 75V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Drain Current vs. Junction Temperature en de d Power Derating Transient Thermal Impedance tR e co mm Safe Operation Area Gate Charge No Capacitance Document Number: DS_P0000146 4 Version: C15 TSM80N08 75V N-Channel Power MOSFET TO-220 Mechanical Drawing d No tR e co mm en A B C D E F G H J K L M N O P de DIM TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Document Number: DS_P0000146 5 Version: C15 TSM80N08 No tR e co mm en de d 75V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000146 6 Version: C15