TP65H035WS

TP65H035WS 650V Cascode GaN FET in TO-247 (source tab) Description Features The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature • AN0009: Recommended External Circuitry for GaN FETs • AN0003: Printed Circuit Board Layout and Probing • AN0010: Paralleling GaN FETs Ordering Information Package Package Configuration 3 lead TO-247 Source Part Number TP65H035WS • JEDEC qualified GaN technology • Dynamic RDS(on)eff production tested • Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability • Very low QRR • Reduced crossover loss • RoHS compliant and Halogen-free packaging Benefits • Improves efficiency/operation frequencies over Si • Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost • Easy to drive with commonly-used gate drivers • GSD pin layout improves high speed design Applications • • • • TP65H035WS TO-247 (top view) Datacom Broad industrial PV inverter Servo motor S Key Specifications VDSS (V) 650 VDSS(TR)(V) 800 RDS(on)eff (mΩ) max* G S D 41 QRR (nC) typ 178 QG (nC) typ 24 * Dynamic on-resistance; see Figures 17 and 18 Common Topology Power Recommendations Cascode Schematic Symbol March 31, 2021 tp65h035w.4 Cascode Device Structure CCM bridgeless totem-pole* 3770W max Hard-switched inverter** 4600W max Conditions: FSW=45kHz; TJ=115°C; THEATSINK=90°C; insulator between device and heatsink (6 mil Sil-Pad® K-10); power de-rates at lower voltages with constant current * VIN=230VAC; VOUT=390VDC ** VIN=380VDC; VOUT=240VAC © 2018 Transphorm Inc. Subject to change without notice. 1 TP65H035WS Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±20 Maximum power dissipation @TC=25°C 156 W Continuous drain current @TC=25°C b 46.5 A Continuous drain current @TC=100°C b 29.5 A Pulsed drain current (pulse width: 10µs) 240 A (di/dt)RDMC Reverse diode di/dt, repetitive c 1800 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 3800 A/µs Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C Soldering peak temperature e 260 °C Mounting Torque 80 N cm Maximum Unit VDSS(TR) VGSS PD ID IDM TC TJ TS TSOLD - Operating temperature Storage temperature V Notes: a. In off-state, spike duty cycle D