C2M0045170P

VDS 1700 V ID @ 25˚C C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 72 A 45 mΩ N-Channel Enhancement Mode Features • • • • • • Package Optimized package with separate driver source pin 8mm of creepage distance between drain and source High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Halogen Free, RoHS Compliant TAB Drain Benefits • • • • • Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency 1 D 2 3 4 S S G Gate (Pin 4) Applications • • • • Driver Source (Pin 3) 1500V Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Pulsed Power Applications Power Source (Pin 2) Part Number Package Marking C2M0045170P TO-247-4 Plus C2M0045170P Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1700 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (Static) -5/+20 V Static Note: 2 VGS =20 V, TC = 25˚C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 72 48 A VGS =20 V, TC = 100˚C Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 520 W TC=25˚C, TJ = 150 ˚C Fig. 20 -40 to +150 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -5V/+25V Note (2): MOSFET can also safely operate at 0/+20V 1 Value C2M0045170P Rev. -, 04-2018 1.6mm (0.063”) from case for 10s Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. 2.0 2.6 2 45 Drain-Source On-State Resistance 3672 Coss Output Capacitance 171 Crss Reverse Transfer Capacitance 6.7 Eoss Coss Stored Energy 105 EON Turn-On Switching Energy (SiC Diode FWD) 0.67 EOFF Turn Off Switching Energy (SiC Diode FWD) 0.31 EON Turn-On Switching Energy (Body Diode FWD) 2.8 EOFF Turn Off Switching Energy (Body Diode FWD) 0.35 td(on) Turn-On Delay Time 35 Rise Time 13 Turn-Off Delay Time 46 Fall Time 10 Internal Gate Resistance 1.3 Qgs Gate to Source Charge 44 Qgd Gate to Drain Charge 57 Qg Total Gate Charge 188 tf RG(int) VDS = VGS, ID = 18mA V VDS = VGS, ID = 18mA, TJ = 150 °C 100 μA VDS = 1700 V, VGS = 0 V 600 nA mΩ 21.7 Input Capacitance td(off) V 4 90 Ciss Test Conditions VGS = 0 V, ID = 100 μA 59 Transconductance Unit V 1.8 gfs tr Max. 1700 S 24.4 Fig. 11 VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 50 A VGS = 20 V, ID = 50 A, TJ = 150 °C VDS= 20 V, IDS= 50 A VDS= 20 V, IDS= 50 A, TJ = 150 °C VGS = 0 V pF Note VDS = 1000 V Fig. 4,5,6 Fig. 7 Fig. 17,18 f = 1 MHz μJ VAC = 25 mV Fig 16 mJ VDS = 1200 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5Ω, L= 105 μH, TJ = 150 °C, using SiC Diode as FWD Fig. 26, 29b mJ VDS = 1200 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5Ω, L= 105 μH, TJ = 150 °C, using MOSFET as FWD Fig. 26, 29a ns VDD = 1200 V, VGS = -5/20 V ID = 50 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 1200 V, VGS = -5/20 V ID = 50 A Per IEC60747-8-4 pg 21 Fig. 27, 29 Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions Note 4.1 V VGS = - 5 V, ISD = 25 A 3.6 V VGS = - 5 V, ISD = 25 A, TJ = 150 °C Fig. 8, 9, 10 Note 1 A TC= 25 °C, VGS = - 5 V Note 1 VGS = - 5 V, ISD = 50 A , VR = 1200 V dif/dt = 3000 A/µs Note 1 IS Continuous Diode Forward Current trr Reverse Recovery Time 44 ns Qrr Reverse Recovery Charge 2 µC Irrm Peak Reverse Recovery Current 60 A 72 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol 2 Parameter Typ. Max. RθJC Thermal Resistance from Junction to Case 0.22 0.24 RθJC Thermal Resistance from Junction to Ambient C2M0045170P Rev. -, 04-2018 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 125 Drain-Source Current, IDS (A) 150 Conditions: TJ = -40 °C tp < 200 µs 125 VGS = 18 V VGS = 16 V 100 VGS = 14 V 75 VGS = 12 V 50 VGS = 10 V 25 0 0.0 Conditions: TJ = 25 °C tp < 200 µs VGS = 20 V Drain-Source Current, IDS (A) 150 2.5 5.0 7.5 10.0 12.5 VGS = 20 V VGS = 18 V 100 VGS = 12 V 75 50 VGS = 10 V 25 0 15.0 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) VGS = 18 V 2.0 VGS = 16 V VGS = 14 V 100 VGS = 12 V 75 VGS = 10 V 50 25 0 2.5 5.0 7.5 10.0 12.5 1.0 0.5 15.0 17.5 20.0 -50 -25 0 Drain-Source Voltage, VDS (V) 120 TJ = 150 °C 100 80 TJ = 25 °C 60 40 TJ = -40 °C 20 0 0 20 40 60 80 100 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C2M0045170P Rev. -, 04-2018 120 50 75 100 125 150 Conditions: IDS = 50 A tp < 200 µs 100 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 120 Conditions: VGS = 20 V tp < 200 µs 140 25 Junction Temperature, TJ (°C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 °C 160 15.0 1.5 0.0 0.0 12.5 Conditions: IDS = 50 A VGS = 20 V tp < 200 µs VGS = 20 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 125 10.0 Figure 2. Output Characteristics TJ = 25 °C 2.5 Conditions: TJ = 150 °C tp < 200 µs 7.5 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 °C 150 VGS = 14 V VGS = 16 V 140 80 VGS = 14 V 60 VGS = 16 V 40 VGS = 20 V VGS = 18 V 20 0 -50 -25 0 25 50 75 Junction Temperature, TJ (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 125 -7 Conditions: VDS = 20 V tp < 200 µs TJ = 150 °C 75 TJ = 25 °C 50 TJ = -40 °C 25 0 0 2 4 6 8 -5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 100 -6 10 12 -4 VGS = -5 V -3 -2 -1 0 0 -30 VGS = 0 V -60 Drain-Source Voltage VDS (V) -90 4.0 -7 -6 3.5 0.5 Figure 11. Threshold Voltage vs. Temperature 4 C2M0045170P Rev. -, 04-2018 -1 0 0 -30 VGS = 0 V -90 Conditions: TJ = 150°C tp < 200 µs Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 1.0 125 -2 -60 -120 -150 Conditions: IDS = 50 A IGS = 100 mA VDS = 1200 V TJ = 25 °C 20 1.5 100 -3 VGS = -2 V 25 2.0 Junction Temperature TJ (°C) -150 Figure 10. Body Diode Characteristic at 150 ºC 2.5 75 -4 VGS = -5 V -150 3.0 50 -5 -120 Conditons VGS =VDS IDS = 18 mA 25 -120 Conditions: TJ = -40°C tp < 200 µs Figure 9. Body Diode Characteristic at 25 ºC 0 -60 Figure 8. Body Diode Characteristic at -40 ºC Conditions: TJ = 25°C tp < 200 µs -25 0 Drain-Source Voltage VDS (V) -90 -50 0 -30 14 VGS = -2 V 0.0 -1 VGS = -2 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -5 -2 VGS = 0 V Figure 7. Transfer Characteristic For Various Junction Temperatures -6 -3 VGS = -5 V Gate-Source Voltage, VGS (V) -7 -4 150 15 10 5 0 -5 0 20 40 60 80 100 120 140 160 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristic 180 200 Typical Performance -6 -5 -4 -3 -2 -1 0 -6 0 -5 -4 -3 -30 VGS = 5 V VGS = 10 V -60 VGS = 15 V -90 VGS = 20 V -3 -2 -1 Drain-Source Voltage VDS (V) 0 120 0 -30 VGS = 5 V VGS = 10 V -60 VGS = 15 V VGS = 20 V -90 -120 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -150 100 Drain-Source Voltage VDS (V) 80 60 40 20 0 -150 0 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 400 600 800 Drain to Source Voltage, VDS (V) 1000 1200 Figure 16. Output Capacitor Stored Energy 10000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 1000 Capacitance (pF) Capacitance (pF) -120 Figure 14. 3rd Quadrant Characteristic at 25 ºC Conditions: TJ = 150 °C tp < 200 µs Coss 100 Crss 10 Coss 100 Crss 10 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0-200 V) 5 -90 VGS = 20 V Conditions: TJ = 25 °C tp < 200 µs VGS = 0 V 1 -60 VGS = 15 V Figure 13. 3rd Quadrant Characteristic at -40 ºC -4 0 -30 VGS = 10 V -150 Drain-Source Voltage VDS (V) -5 0 VGS = 5 V -120 Conditions: TJ = -40 °C tp < 200 µs -6 -1 VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V -2 C2M0045170P Rev. -, 04-2018 200 1 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0-1000 V) 1000 Typical Performance 600 Conditions: TJ ≤ 150 °C 70 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 80 60 50 40 30 20 10 0 -55 -30 -5 20 45 70 Case Temperature, TC (°C) 95 120 500 400 300 200 100 0 145 Conditions: TJ ≤ 150 °C Figure 19. Continuous Drain Current Derating vs. Case Temperature -55 -30 -5 20 45 70 Case Temperature, TC (°C) 95 120 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 0.3 0.1 0.05 10E-3 0.02 0.01 1E-3 SinglePulse 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 ms 100 ms 1.00 0.10 1 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 1.2 2.5 0.9 EOn 0.6 EOff 0.3 0.0 0 10 20 30 40 50 60 Drain to Source Current, IDS (A) C2M0045170P Rev. -, 04-2018 2.0 70 1000 ETotal 1.5 EOn 1.0 EOff 0.5 80 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 900V) 6 Conditions: TJ = 25 °C VDD = 1200 V RG(ext) = 2.5 Ω VGS = -5V/+20 V FWD = C2M0045170P L = 130 μH ETotal Switching Loss (mJ) Switching Loss (mJ) 1.5 100 Figure 22. Safe Operating Area 3.0 Conditions: TJ = 25 °C VDD = 900 V RG(ext) = 2.5 Ω VGS = -5V/+20 V FWD = C2M0045170P L = 130 μH 10 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 1.8 100 µs 10.00 0.01 1E-6 10 µs Limited by RDS On 0.5 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 100E-3 145 90 0.0 0 10 20 30 40 50 60 Drain to Source Current, IDS (A) 70 80 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 1200V) 90 Typical Performance 5.0 Switching Loss (mJ) 3.5 Conditions: TJ = 25 °C VDD = 1200 V IDS = 50 A VGS = -5V/+20 V FWD = C2M0045170P L = 130 μH 4.0 2.5 ETotal 3.0 EOn 2.0 EOff 1.0 0.0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Conditions: TJ = 25 °C VDD = 1200 V IDS = 50 A VGS = -5V/+20 V FWD = C2M0045170P L = 130 μH Switching Times (ns) 125 100 1.5 ETotal 1.0 EOn 20 25 0.0 EOff EOff 0 25 50 75 100 125 Junction Temperature, TJ (°C) 50 tf tr 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) C2M0045170P Rev. -, 04-2018 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature td(on) 25 7 EOn td(off) 75 0 2.0 ETotal 0.5 Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 150 Conditions: IDS = 20 A VDD = 1200 V RG(ext) = 2.5 Ω VGS = -5V/+20 V FWD = C2M0045170P (- - -)FWD = C3D25170H L = 130 μH 3.0 Switching Loss (mJ) 6.0 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Q1 RG VGS= - 5V Q2 RG C2M0045170P D.U.T Figure 29a. Clamped Inductive Switching Test Circuit using MOSFET intristic body diode C3D25170H 25A, 1700V SiC Schottky D1 VDC RG Q2 D.U.T C2M0045170P Figure 29b. Clamped Inductive Switching Test Circuit using SiC Schottky diode 8 C2M0045170P Rev. -, 04-2018 Package Dimensions Package TO-247-4L Plus Semiconductor ASE Advanced Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98W0004TO005 ISSUE A DATE May.20, 2016 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT 2. DIMENSIONING & TOLERANCEING CONFIRM ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. E MILLIMETERS SYM E1 E4 A A1 A2 b' b b1 b2 b3 b4 b5 b6 c' c D D1 D2 E E1 E2 E3 E4 e e1 N L L1 L2 Q T W X E2 E3 BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE TITLE: 9 TO-247 Plus 4 LD C2M0045170P Rev. -, 04-2018 COMPANY ASE Weihai SHEET 1 OF 3 TITLE: MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 2.39 2.94 2.39 2.84 1.07 1.60 1.07 1.50 2.39 2.69 2.39 2.64 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43 2.54 BSC 5.08 BSC 4 17.31 17.82 3.97 4.37 2.35 2.65 5.49 6.00 17.5° REF. 3.5 ° REF. 4 ° REF. TO-247 Plus 4LD Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C2M0045170P Rev. -, 04-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power