TSM2N60SCW RPG

TSM2N60S Taiwan Semiconductor N-Channel Power MOSFET 600V, 0.6A, 5Ω FEATURES KEY PERFORMANCE PARAMETERS ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 5 Ω Qg 13 nC en de d discrete fast recovery diode. APPLICATION ● Power Supply ● Lighting ● Charger mm SOT-223 eco Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER No tR Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C SYMBOL LIMIT UNIT VDS 600 V VGS ±30 V ID 0.6 A 0.36 IDM 1.5 A PDTOT 2.5 W Single Pulsed Avalanche Energy (Note 3) EAS 62 mJ Single Pulsed Avalanche Current (Note 3) IAS 2.5 A TJ 150 °C TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 15 °C/W Junction to Ambient Thermal Resistance RӨJA 55.8 °C/W Operating Junction Temperature Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air Document Number: DS_P0000066 1 Version: C15 TSM2N60S Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MIN TYP MAX UNIT VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS =±30V, VDS =0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS =600V, VGS =0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS =10V, ID =0.6A RDS(ON) -- 3.6 5 Ω Forward Transconductance VDS = 10V, ID = 0.2A gfs -- 0.8 -- S VDS =400V, ID =0.6A, Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance VDS =25V, VGS =0V, Reverse Transfer Capacitance Switching f =1.0MHz (Note 6) Turn-On Delay Time VGS =10V, ID =0.6A, Turn-Off Delay Time VDD =300V, RG =18Ω, Source-Drain Diode Notes: 13 -- Qgs -- 2 -- Qgd -- 6 -- Ciss -- 435 -- Coss -- 56 -- Crss -- 9.2 -- td(on) -- 12 -- tr -- 21 -- td(off) -- 30 -- tf -- 24 -- VSD -- 0.85 1.15 nC pF ns (Note 4) IS = 0.6A, VGS = 0V V tR Forward On Voltage e co Turn-On Rise Time Turn-Off Fall Time -- mm Output Capacitance Qg en VGS = 10V d Drain-Source Breakdown Voltage de Static CONDITIONS (Note 4) Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 2.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. No 1. Document Number: DS_P0000066 2 Version: C15 TSM2N60S Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM2N60SCW RPG PACKAGE PACKING SOT-223 2,500pcs / 13” Reel No tR e co mm en de d Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000066 3 Version: C15 TSM2N60S Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics en de d Output Characteristics Gate Charge tR e co mm On-Resistance vs. Drain Current Source-Drain Diode Forward Voltage No On-Resistance vs. Junction Temperature Document Number: DS_P0000066 4 Version: C15 TSM2N60S Taiwan Semiconductor CHARACTERISTICS CURVES (Tc = 25°C unless otherwise noted) Threshold Voltage en de d On-Resistance vs. Gate-Source Voltage tR e co mm Maximum Safe Operating Area No Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000066 5 Version: C15 TSM2N60S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en de d SOT-223 tR e co mm SUGGESTED PAD LAYOUT No MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000066 6 Version: C15 TSM2N60S No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000066 7 Version: C15